NDF04N62ZG ON Semiconductor, NDF04N62ZG Datasheet

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NDF04N62ZG

Manufacturer Part Number
NDF04N62ZG
Description
MOSFET N-CH 620V 2OHM TO220FP
Manufacturer
ON Semiconductor
Datasheet

Specifications of NDF04N62ZG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
620V
Current - Continuous Drain (id) @ 25° C
4.4A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
535pF @ 25V
Power - Max
28W
Mounting Type
Through Hole
Package / Case
TO-220FP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDF04N62ZG
NDF04N62ZGOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NDF04N62ZG
Manufacturer:
ON
Quantity:
2 550
NDF04N62Z, NDP04N62Z,
NDD04N62Z
N-Channel Power MOSFET
620 V, 1.8 W
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq
2. Limited by maximum junction temperature
3. I
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
ABSOLUTE MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 1
Drain−to−Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current,
Power Dissipation R
Gate−to−Source Voltage
Single Pulse Avalanche
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage
Peak Diode Recovery
Continuous Source Current
Maximum Temperature for
Operating Junction and
Storage Temperature Range
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free and RoHS Compliant
[2 oz] including traces).
SD
R
R
V
(Note 1)
Energy, I
(t = 0.3 sec., R.H. ≤ 30%,
T
(Body Diode)
Soldering Leads, 0.063″
(1.6 mm) from Case for
10 s Package Body for 10 s
A
GS
qJC
qJC
= 4.0 A, di/dt ≤ 100 A/ms, V
= 25°C) (Figure 14)
, T
@ 10V
Parameter
A
D
= 100°C
= 4.0 A
qJC
Symbol
DD
T
V
T
V
dv/dt
V
J
V
E
I
P
T
PKG
, T
DSS
DM
I
I
ISO
I
esd
GS
≤ BV
D
D
AS
S
D
L
stg
(T
C
DSS
= 25°C unless otherwise noted)
(Note 2)
(Note 2)
(Note 2)
, T
4500
NDF
4.4
2.8
18
28
J
= +150°C
4.5 (Note 3)
−55 to 150
3000
620
±30
120
300
260
4.0
NDP
4.4
2.8
18
96
NDD
4.1
2.6
16
83
1
V/ns
Unit
mJ
°C
°C
W
V
A
A
A
V
V
V
A
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
CASE 221D
TO−220FP
1
STYLE 1
2
3
620 V
V
G (1)
DSS
ORDERING INFORMATION
CASE 221A
1
TO−220AB
STYLE 5
http://onsemi.com
2
3
N−Channel
D (2)
Publication Order Number:
CASE 369D
R
STYLE 2
1
DS(ON)
IPAK
2
S (3)
3
1.8 Ω
(TYP) @ 2 A
NDF04N62Z/D
4
CASE 369AA
1 2
STYLE 2
DPAK
3
4

Related parts for NDF04N62ZG

NDF04N62ZG Summary of contents

Page 1

... A, di/dt ≤ 100 A/ms, V ≤ This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice. © Semiconductor Components Industries, LLC, 2010 April, 2010 − Rev 25°C unless otherwise noted) ...

Page 2

THERMAL RESISTANCE Parameter Junction−to−Case (Drain) Junction−to−Ambient Steady State ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain−to−Source Leakage Current Gate−to−Source Forward Leakage ON CHARACTERISTICS (Note 5) Static Drain−to−Source On−Resistance Gate Threshold Voltage Forward Transconductance DYNAMIC CHARACTERISTICS ...

Page 3

T = 25° DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 3.5 3 2 (V) GS Figure 3. On−Resistance vs. ...

Page 4

150°C J 1000 T = 100°C 100 100 200 300 V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Drain−to−Source Leakage Current vs. Voltage ...

Page 5

... Figure 13. Thermal Impedance for NDF04N62Z Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TYPICAL CHARACTERISTICS 0.001 0.01 0.1 PULSE TIME (s) ...

Page 6

... ORDERING INFORMATION Order Number NDF04N62ZG NDP04N62ZG NDD04N62Z−1G NDD04N62ZT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NDF04N62ZG or NDP04N62ZG AYWW Gate Drain Package TO−220FP (Pb−Free) TO−220AB (Pb−Free) IPAK (Pb− ...

Page 7

PACKAGE DIMENSIONS TO−220 FULLPAK −B− −Y− 0.25 (0.010 ...

Page 8

−T− SEATING K PLANE 0.13 (0.005) M PACKAGE DIMENSIONS IPAK CASE 369D−01 ISSUE http://onsemi.com 8 NOTES: 1. DIMENSIONING AND ...

Page 9

... PL 0.13 (0.005) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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