BSS138K Fairchild Semiconductor, BSS138K Datasheet - Page 2

• Manufacturer Part Number: BSS138K
• Description: MOSFET N-CH 50V 220MA SOT-23-3
• Manufacturer: Fairchild Semiconductor

Specifications of BSS138K

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 50mA, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 220mA
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 2.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 58pF @ 25V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 Ohms
• Forward Transconductance Gfs (max / Min): 200 mS
• Drain-source Breakdown Voltage: 50 V
• Continuous Drain Current: 0.22 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 2.4 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS138KTR

© 2010 Fairchild Semiconductor Corporation
BSS138K Rev. A2
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
R
V
BV
BV
t
I
t
V
D(OFF)
DS(ON)
D(ON)
D(ON)
I
I
C
C
GS(th)
C
Q
Q
g
V
DSS
GSS
R
GS(th)
Q
T
T
FS
oss
t
t
rss
DSS
DSS
iss
gd
sd
r
f
gs
G
J
g
J
Drain-Source Breakdown Voltage V
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Change
Gate-Source Change
Gate-Drain Change
Drain-Source Diode
Forward Voltage
Parameter
T
A
= 25°C unless otherwise noted
I
V
V
V
V
V
I
V
V
V
V
V
V
V
V
V
V
V
V
D
D
GS
DS
GS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DS
DD
GS
DS
GS
GS
=250µA, Referenced to 25°C
= 1mA, Referenced to 25°C
= 0V, I
= 50V, V
= ±12V, V
= ±10V, V
= ±5V, V
= 10V, V
= 5V, V
= V
= 10V, I
= 25V, V
= 30V, I
= 10V, R
= 25V, I
= 10V, I
= 1.8V, I
= 2.5V, I
= 5V, I
= 0V, I
Test Condition
GS
2
, I
D
D
S
GS
G
D
D
D
=10µA
GS
DS
D
DS
= 115mA
D
D
= 50mA,
GS
GEN
DS
DS
= 10mV
= 200mA
= 0.2A,
= 0.29A,
= 0.1mA
= 250µA
= 50mA,
= 50mA,
= 0V
= 0V
= 5V
= 0V, f = 1.0MHz
= 0V
= 0V
= 6Ω
Min.
200
0.6
0.2
50
Typ.
0.11
9.75
-1.4
281
5.2
58
Max.
±0.05
±0.5
0.1
1.2
2.5
2.0
1.6
2.4
0.5
0.5
1.2
±1
60
35
5
5
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mV/°C
Units
V/°C
mS
µA
µA
pF
nC
ns
V
V
Ω
A
Ω
V