SI2325DS-T1-GE3 Vishay, SI2325DS-T1-GE3 Datasheet

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SI2325DS-T1-GE3

Manufacturer Part Number
SI2325DS-T1-GE3
Description
MOSFET P-CH D-S 150V SOT-23
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI2325DS-T1-GE3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.2 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
530mA
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
510pF @ 25V
Power - Max
750mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
P Channel
Continuous Drain Current Id
-690mA
Drain Source Voltage Vds
-150V
On Resistance Rds(on)
1.3ohm
Rds(on) Test Voltage Vgs
-6V
Threshold Voltage Vgs Typ
-4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI2325DS-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI2325DS-T1-GE3
Manufacturer:
SEP
Quantity:
32 200
Part Number:
SI2325DS-T1-GE3
Manufacturer:
VISHAY
Quantity:
150
Part Number:
SI2325DS-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI2325DS-T1-GE3
Quantity:
60 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 73238
S09-0133-Rev. B, 02-Feb-09
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
- 150
DS
(V)
1.3 at V
1.2 at V
R
DS(on)
GS
GS
= - 6.0 V
= - 10 V
(Ω)
J
a, b
= 150 °C)
a
P-Channel 150-V (D-S) MOSFET
Ordering Information: Si2325DS -T1-E3 (Lead (Pb)-free)
a, b
I
- 0.69
- 0.66
D
(A)
a, b
A
Q
G
S
= 25 °C, unless otherwise noted
g
Steady State
Steady State
7.7
Si2325DS -T1-GE3 (Lead (Pb)-free and Halogen-free)
L = 1.0 mH
(Typ.)
T
T
T
T
1
2
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
* Marking Code
Si2325DS (D5)*
(SOT-23)
Top View
TO-236
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Ultra Low On-Resistance
• Small Size
• Active Clamp Circuits in DC/DC Power Supplies
3
Symbol
Symbol
T
R
R
J
Available
V
V
E
I
I
P
, T
I
DM
thJA
thJF
I
AS
DS
GS
AS
D
S
D
D
stg
®
Power MOSFET
Typical
- 0.69
- 0.55
- 1.0
1.25
120
5 s
0.8
75
40
- 55 to 150
- 150
± 20
- 1.6
1.01
4.5
Steady State
Maximum
- 0.53
- 0.43
- 0.6
0.75
0.48
100
166
50
Vishay Siliconix
Si2325DS
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for SI2325DS-T1-GE3

SI2325DS-T1-GE3 Summary of contents

Page 1

... R (Ω) DS DS(on) 1 150 1 6 Ordering Information: Si2325DS -T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... Si2325DS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... On-Resistance vs. Drain Current 0 Total Gate Charge (nC) g Gate Charge Document Number: 73238 S09-0133-Rev. B, 02-Feb- 1.0 1.2 1.4 1 Si2325DS Vishay Siliconix 1.6 1.4 1.2 1.0 0.8 0 125 °C C 0.4 25 °C 0.2 0 Gate-to-Source Voltage ( Transfer Characteristics 500 400 C iss 300 200 100 C oss C rss ...

Page 4

... Si2325DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.3 1 250 µA D 0.7 0.4 0.1 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 1.0 1.2 1.4 75 100 125 150 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73238. Document Number: 73238 S09-0133-Rev. B, 02-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si2325DS Vishay Siliconix Notes ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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