FDMC86240 Fairchild Semiconductor, FDMC86240 Datasheet

MOSFET N-CH 150V 16A POWER33

FDMC86240

Manufacturer Part Number
FDMC86240
Description
MOSFET N-CH 150V 16A POWER33
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMC86240

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
51 mOhm @ 4.6A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
4.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
905pF @ 75V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
51 mOhms
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
16 A
Power Dissipation
40 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
6 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMC86240TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC86240
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDMC86240
Quantity:
200
©2010 Fairchild Semiconductor Corporation
FDMC86240 Rev.C
FDMC86240
N-Channel Power Trench
150 V, 16 A, 51 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMC86240
DS(on)
DS(on)
= 51 mΩ at V
= 70 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
MLP 3.3x3.3
GS
GS
= 10 V, I
= 6 V, I
FDMC86240
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
D
D
= 3.9 A
Pin 1
= 4.6 A
T
A
®
= 25 °C unless otherwise noted
S
S
Parameter
MOSFET
S
G
Bottom
Power 33
Package
1
D
T
T
T
T
T
D
General Description
This
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
C
C
A
C
A
D
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
DC - DC Conversion
D
N-Channel
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
D
D
D
D
(Note 3)
MOSFET
7
8
5
6
Tape Width
12 mm
is
-55 to +150
Ratings
produced using Fairchild
150
±20
3.1
4.6
2.3
53
16
19
20
34
40
®
process that has
www.fairchildsemi.com
4
1
3
2
3000 units
Quantity
July 2010
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

Related parts for FDMC86240

FDMC86240 Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMC86240 FDMC86240 ©2010 Fairchild Semiconductor Corporation FDMC86240 Rev.C ® MOSFET General Description = 4.6 A This N-Channel D Semiconductor‘s advanced Power Trench = 3 been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Reverse Recovery Charge rr NOTES determined with the device mounted θJA the user's board design. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting N- FDMC86240 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 ° 120 V, V ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On- Resistance vs Junction Temperature 20 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMC86240 Rev °C unless otherwise noted J 3 2.5 2 4.5 V 1.5 GS 1.0 μ 200 150 100 100 125 150 ...

Page 4

... Switching Capability THIS AREA IS LIMITED BY r DS(on) 0.1 SINGLE PULSE T = MAX RATED 125 C/W θ 0.005 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDMC86240 Rev °C unless otherwise noted J 2000 1000 V = 100 V DD 100 100 Figure 10. 2000 1000 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 0.0005 - FDMC86240 Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJA θJA ...

Page 6

... Dimensional Outline and Pad Layout FDMC86240 Rev.C 6 www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMC86240 Rev.C F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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