PSMN015-60PS,127 NXP Semiconductors, PSMN015-60PS,127 Datasheet - Page 11

• Manufacturer Part Number: PSMN015-60PS,127
• Description: MOSFET N-CH 60V 50A SOT78
• Manufacturer: NXP Semiconductors

Specifications of PSMN015-60PS,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 86W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 20.9nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 50A
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14.8 mOhm @ 15A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 34 mOhms
• Drain-source Breakdown Voltage: 54 V
• Continuous Drain Current: 36 A
• Power Dissipation: 86 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
8. Revision history
Table 7.
PSMN015-60PS_2
Objective data sheet
Document ID
PSMN015-60PS_2
Modifications:
PSMN015-60PS_1
Revision history
20100222
Various changes to content.
20100125
Release date
All information provided in this document is subject to legal disclaimers.
Data sheet status
Objective data sheet
Objective data sheet
Rev. 02 — 22 February 2010
N-channel 60 V 14.8 mΩ standard level MOSFET
Change notice
-
-
PSMN015-60PS
Supersedes
PSMN015-60PS_1
-
© NXP B.V. 2010. All rights reserved.
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