STP60N3LH5 STMicroelectronics, STP60N3LH5 Datasheet

MOSFET N-CH 30V 48A TO-220

STP60N3LH5

Manufacturer Part Number
STP60N3LH5
Description
MOSFET N-CH 30V 48A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheets

Specifications of STP60N3LH5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.4 mOhm @ 24A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
8.8nC @ 5V
Input Capacitance (ciss) @ Vds
1350pF @ 25V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0114 Ohms
Forward Transconductance Gfs (max / Min)
1.1 V
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
48 A
Power Dissipation
60 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Gate Charge Qg
8.8 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10713-5

Available stocks

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Manufacturer
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Price
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Features
Application
Description
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM.
Table 1.
April 2009
STD60N3LH5
STU60N3LH5
STP60N3LH5
R
Extremely low on-resistance R
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Switching applications
DS(on)
Type
STD60N3LH5
STU60N3LH5
STP60N3LH5
Order codes
* Q
Device summary
g
industry benchmark
V
30 V
30 V
30 V
DSS
N-channel 30 V, 0.0072 Ω , 48 A DPAK, IPAK, TO-220
R
DS(on)
0.0084 Ω
0.0084 Ω
0.008 Ω
DS(on)
60N3LH5
60N3LH5
60N3LH5
Marking
max
48 A
48 A
48 A
Doc ID 14079 Rev 3
I
D
STP60N3LH5, STU60N3LH5
Figure 1.
STripFET™ V Power MOSFET
Package
TO-220
DPAK
DPAK
IPAK
1
Internal schematic diagram
3
TO-220
STD60N3LH5
1
2
Tape and reel
3
Packaging
Tube
Tube
IPAK
www.st.com
1
2
1/16
3
16

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STP60N3LH5 Summary of contents

Page 1

... FOM. Table 1. Device summary Order codes STD60N3LH5 STP60N3LH5 STU60N3LH5 April 2009 STP60N3LH5, STU60N3LH5 STripFET™ V Power MOSFET max I D 0.008 Ω DS(on) Figure 1. ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 STD60N3LH5, STP60N3LH5, STU60N3LH5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Doc ID 14079 Rev ...

Page 3

... STD60N3LH5, STP60N3LH5, STU60N3LH5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-source voltage ( Gate-Source voltage GS (1) I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Derating factor (3) E Single pulse avalanche energy AS T Operating junction temperature ...

Page 4

... Output capacitance oss C Reverse transfer rss capacitance Q Total gate charge g Q Gate-source charge gs Q Gate-drain charge gd Pre gs1 charge Post V Q gs2 charge R Gate input resistance G 4/16 STD60N3LH5, STP60N3LH5, STU60N3LH5 Parameter Test conditions I = 250 µ V,Tc = 125 ° ± SMD version ...

Page 5

... STD60N3LH5, STP60N3LH5, STU60N3LH5 Table 6. Switching on/off (resistive load) Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD I Source-drain current (pulsed) SDM V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Normalized B VDSS 6/16 STD60N3LH5, STP60N3LH5, STU60N3LH5 Figure 3. Figure ( temperature Figure 7. Doc ID 14079 Rev 3 Thermal impedance Transfer characteristics Static drain-source on resistance AM03360v1 (V) GS ...

Page 7

... STD60N3LH5, STP60N3LH5, STU60N3LH5 Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Capacitance variations Figure 11. Normalized on resistance vs temperature Doc ID 14079 Rev 3 Electrical characteristics 7/16 ...

Page 8

... Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/16 STD60N3LH5, STP60N3LH5, STU60N3LH5 Figure 14. Gate charge test circuit Figure 16. Unclamped inductive load test circuit Figure 18. Switching time waveform Doc ID 14079 Rev 3 ...

Page 9

... STD60N3LH5, STP60N3LH5, STU60N3LH5 Figure 19. Gate charge waveform Doc ID 14079 Rev 3 Test circuits 9/16 ...

Page 10

... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/16 STD60N3LH5, STP60N3LH5, STU60N3LH5 Doc ID 14079 Rev 3 ® ...

Page 11

... STD60N3LH5, STP60N3LH5, STU60N3LH5 DIM (L1 TO-251 (IPAK) mechanical data mm. min. typ 2.20 0.90 0.64 5.20 0.45 0.48 6.00 6.40 2.28 4.40 16.10 9.00 0.80 0. Doc ID 14079 Rev 3 Package mechanical data max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 4.60 9.40 1 ...

Page 12

... Package mechanical data DIM 12/16 STD60N3LH5, STP60N3LH5, STU60N3LH5 TO-252 (DPAK) mechanical data mm. min. typ 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.40 4.70 2.28 4.40 9.35 1 2.80 0.80 0.60 0. Doc ID 14079 Rev 3 max. 2.40 1.10 0.23 0.90 5.40 0.60 ...

Page 13

... STD60N3LH5, STP60N3LH5, STU60N3LH5 Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28.90 3.75 3.85 2.65 2 ...

Page 14

... D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7 15.7 14/16 STD60N3LH5, STP60N3LH5, STU60N3LH5 TAPE AND REEL SHIPMENT inch MAX. MIN. MAX. 7 0.267 0.275 10.6 0.409 0.417 12.1 0.476 1.6 0.059 0.063 0.059 1.85 0.065 0.073 7.6 0.291 0.299 2.75 0.100 0.108 4 ...

Page 15

... STD60N3LH5, STP60N3LH5, STU60N3LH5 6 Revision history Table 8. Document revision history Date 19-Oct-2007 23-Sep-2008 20-Apr-2009 Revision 1 First release 2 V value has been changed on GS – Inserted typical adn maximum value in V Figure 5: Transfer characteristics 3 – – Added device in TO-220 Doc ID 14079 Rev 3 Revision history ...

Page 16

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 16/16 STD60N3LH5, STP60N3LH5, STU60N3LH5 Please Read Carefully: © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies www ...

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