MTD6N15T4GV ON Semiconductor, MTD6N15T4GV Datasheet
MTD6N15T4GV
Specifications of MTD6N15T4GV
Related parts for MTD6N15T4GV
MTD6N15T4GV Summary of contents
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MTD6N15 Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. Features • Silicon Gate ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( Vdc Zero Gate Voltage Drain Current (V = Rated Vdc) DS DSS 125°C J Gate−Body Leakage Current, Forward (V ...
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TYPICAL ELECTRICAL CHARACTERISTICS DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 2. On−Region Characteristics 14 V ...
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R LIMIT 0.5 DS(on) THERMAL LIMIT PACKAGE LIMIT 0.2 0 25° SINGLE PULSE GS 0.05 0.03 0.3 0.5 0 ...
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400 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Capacitance Variation V in PULSE GENERATOR gen ...
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... G 0.13 (0.005) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...