NDF03N60ZG ON Semiconductor, NDF03N60ZG Datasheet

MOSFET N-CH 600V 3.6OHM TO220FP

NDF03N60ZG

Manufacturer Part Number
NDF03N60ZG
Description
MOSFET N-CH 600V 3.6OHM TO220FP
Manufacturer
ON Semiconductor
Datasheet

Specifications of NDF03N60ZG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.6 Ohm @ 1.2A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
312pF @ 25V
Power - Max
25W
Mounting Type
Through Hole
Package / Case
TO-220FP
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.3 Ohms
Forward Transconductance Gfs (max / Min)
2 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
1 uA to 50 uA
Power Dissipation
25 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDF03N60ZG
NDF03N60ZGOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NDF03N60ZG
Manufacturer:
ON
Quantity:
5 750
Company:
Part Number:
NDF03N60ZG
Quantity:
70
NDF03N60Z, NDP03N60Z,
NDD03N60Z
N-Channel Power MOSFET
600 V, 3.3 W
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I
ABSOLUTE MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 3
Drain−to−Source Voltage
Continuous Drain Current
R
Continuous Drain Current
R
Pulsed Drain Current, V
@ 10 V
Power Dissipation R
Gate−to−Source Voltage
Single Pulse Avalanche
Energy, I
ESD (HBM)
(JESD 22−A114)
RMS Isolation Voltage (t =
0.3 sec., R.H. ≤ 30%,
T
Peak Diode Recovery
Continuous Source Current
(Body Diode)
Maximum Temperature for
Soldering Leads
Operating Junction and
Storage Temperature Range
A
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
qJC
qJC
SD
= 25°C) (Figure 17)
T
= 3.0 A, di/dt ≤ 100 A/ms, V
A
= 100°C
D
Rating
= 3.0 A
qJC
GS
Symbol
T
V
V
dv/dt
V
J
V
E
I
P
DD
DSS
T
, T
DM
I
I
ISO
I
esd
GS
AS
D
D
S
D
L
stg
≤ BV
(T
C
DSS
(Note 1)
(Note 1)
(Note 1)
= 25°C unless otherwise noted)
4500
NDF
3.0
1.9
12
25
, T
J
4.5 (Note 2)
= +150°C
−55 to 150
3000
600
100
260
3.0
NDP
30
3.0
1.9
12
78
NDD
1.65
2.6
10
61
1
V/ns
Unit
mJ
°C
°C
W
V
A
A
A
V
V
V
A
CASE 221D
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
TO−220FP
MARKING AND ORDERING INFORMATION
1
STYLE 1
2
3
600 V
V
DSS
G (1)
CASE 221A
1
TO−220AB
STYLE 5
http://onsemi.com
2
3
N−Channel
CASE 369D
Publication Order Number:
D (2)
R
STYLE 2
DS(on)
1
IPAK
2
3
S (3)
(TYP) @ 1.2 A
3.3 W
NDF03N60Z/D
4
CASE 369AA
1 2
STYLE 2
DPAK
3
4

Related parts for NDF03N60ZG

NDF03N60ZG Summary of contents

Page 1

NDF03N60Z, NDP03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.3 W Features • Low ON Resistance • Low Gate Charge • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T Rating Symbol Drain−to−Source Voltage ...

Page 2

THERMAL RESISTANCE Parameter Junction−to−Case (Drain) Junction−to−Ambient Steady State 3. Insertion mounted 4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 oz] including traces). ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ...

Page 3

V 3.5 3 2.5 2.0 1.5 1.0 0.5 0.0 0.0 5.0 10.0 15 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 5.00 4.75 4.50 4.25 4.00 3.75 3.50 3.25 5.5 6.0 ...

Page 4

T = 150° 125° 100 150 200 250 300 350 400 450 500 550 600 V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Drain−to−Source Leakage Current versus Voltage 15.0 14.0 13.0 ...

Page 5

SINGLE PULSE 100 25° 0.1 R DS(on) THERMAL LIMIT PACKAGE LIMIT 0.01 0 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 12. ...

Page 6

... Figure 16. Thermal Impedance (Junction−to−Case) for NDF03N60Z Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 1E−03 1E−02 1E−01 PULSE TIME (s) ...

Page 7

... ORDERING INFORMATION Order Number NDF03N60ZG NDP03N60ZG NDD03N60Z−1G NDD03N60ZT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NDF03N60ZG or NDP03N60ZG AYWW Gate Drain Package TO−220FP (Pb−Free) TO−220AB (Pb−Free) IPAK (Pb− ...

Page 8

PACKAGE DIMENSIONS TO−220 FULLPAK −B− −Y− 0.25 (0.010 ...

Page 9

... PL G 0.13 (0.005 0.13 (0.005) M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS IPAK CASE 369D−01 ISSUE DPAK CASE 369AA−01 ISSUE A −T− SEATING PLANE SOLDERING FOOTPRINT* 6 ...

Page 10

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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