CY8C3446AXA-098

Manufacturer Part NumberCY8C3446AXA-098
DescriptionIC MCU 8BIT 64KB FLASH 100TQFP
ManufacturerCypress Semiconductor Corp
SeriesPSOC™ 3 CY8C34xx
CY8C3446AXA-098 datasheets

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Specifications of CY8C3446AXA-098

Core Processor8051Core Size8-Bit
Speed50MHzConnectivityEBI/EMI, I²C, LIN, SPI, UART/USART, USB
PeripheralsCapSense, DMA, POR, PWM, WDTNumber Of I /o62
Program Memory Size64KB (64K x 8)Program Memory TypeFLASH
Eeprom Size2K x 8Ram Size8K x 8
Voltage - Supply (vcc/vdd)1.71 V ~ 5.5 VData ConvertersA/D 2x12b, D/A 1x8b
Oscillator TypeInternalOperating Temperature-40°C ~ 85°C
Package / Case*Lead Free Status / RoHS StatusLead free / RoHS Compliant
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Page 101/126

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Table 11-55. EEPROM AC Specifications
Parameter
Description
T
Single row erase/write cycle time
WRITE
EEPROM data retention time, retention
period measured from last erase cycle
11.4.3 Nonvolatile Latches (NVL))
Table 11-56. NVL DC Specifications
Parameter
Description
Erase and program voltage
Table 11-57. NVL AC Specifications
Parameter
Description
NVL endurance
NVL data retention time
11.4.4 SRAM
Table 11-58. SRAM DC Specifications
Parameter
Description
V
SRAM retention voltage
SRAM
Table 11-59. SRAM AC Specifications
Parameter
Description
F
SRAM operating frequency
SRAM
Document Number: 001-53304 Rev. *K
PSoC
Conditions
Min
–
≤ 25 °C,
Average ambient temp, T
20
A
1M erase/program cycles
≤ 55 °C,
Average ambient temp, T
20
A
100 K erase/program cycles
Average ambient temp.
10
≤ 85 °C, 10 K erase/program
T
A
cycles
Conditions
Min
V
pin
1.71
DDD
Conditions
Min
Programmed at 25 °C
1K
Programmed at 0 °C to 70 °C
100
Programmed at 25 °C
20
Programmed at 0 °C to 70 °C
20
Conditions
Min
1.2
Conditions
Min
DC
®
3: CY8C34 Family
Data Sheet
Typ
Max
Units
2
20
ms
–
–
years
–
–
–
–
Typ
Max
Units
–
5.5
V
Typ
Max
Units
–
–
program/
erase
cycles
–
–
program/
erase
cycles
–
–
years
–
–
years
Typ
Max
Units
–
–
V
Typ
Max
Units
–
50.01
MHz
Page 101 of 126
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