BGM1013,115 NXP Semiconductors, BGM1013,115 Datasheet

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BGM1013,115

Manufacturer Part Number
BGM1013,115
Description
MMIC AMPLIFIER SOT-363
Manufacturer
NXP Semiconductors
Type
MMIC Wideband Amplifierr
Datasheet
1.BGM1013115.pdf (14 pages)

Specifications of BGM1013,115

Package / Case
SC-70-6, SC-88, SOT-363
Current - Supply
27.5mA
Frequency
0Hz ~ 2.2GHz
Gain
3.62dB
Noise Figure
4.6dB ~ 4.7dB
P1db
14dBm
Rf Type
ISM
Test Frequency
1GHz
Voltage - Supply
5V ~ 6V
Supply Voltage (max)
6 V
Supply Current
35 mA
Operating Temperature Range
- 40 C to + 85 C
Mounting Style
SMD/SMT
Manufacturer's Type
Broadband Amplifier
Number Of Channels
1
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (typ)
5V
Operating Supply Voltage (max)
5.5V
Package Type
SOT-363
Mounting
Surface Mount
Pin Count
6
Noise Figure (typ)
4.9@2200MHzdB
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2076-2
934058247115
BGM1013 T/R
1. Product profile
CAUTION
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 SMD plastic package.
Table 1:
Symbol
V
I
NF
P
s
S
S
L(sat)
21
BGM1013
MMIC wideband amplifier
Rev. 04 — 1 May 2006
Internally matched to 50
Good output match to 75
Very high gain; 35.5 dB at 1 GHz
Upper corner frequency at 2.1 GHz
31 dB flat gain up to 2.2 GHz application
14 dBm saturated output power at 1 GHz
High linearity (23 dBm IP3
40 dB isolation.
Low Noise Block (LNB) Intermediate Frequency (IF) amplifiers
Cable systems
General purpose.
2
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Quick reference data
Parameter
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
out
and 43 dBc IM2)
Conditions
RF input; AC coupled
f = 1 GHz
f = 1 GHz
f = 1 GHz
Min
-
23
34.5
-
13.0
Product data sheet
Typ
5
27.5
35.5
4.6
14.0
Max
6
33
36.2
4.7
-
Unit
V
mA
dB
dB
dBm

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BGM1013,115 Summary of contents

Page 1

BGM1013 MMIC wideband amplifier Rev. 04 — 1 May 2006 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. CAUTION This device is sensitive ...

Page 2

Philips Semiconductors 2. Pinning information Table 2: Pin Ordering information Table 3: Type number BGM1013 4. Marking Table 4: Type number BGM1013 5. Limiting values Table 5: In accordance with the Absolute Maximum ...

Page 3

Philips Semiconductors 6. Recommended operating conditions Table 6: Operating conditions Symbol Parameter V supply voltage S T ambient temperature amb 7. Thermal characteristics Table 7: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) 8. Characteristics ...

Page 4

Philips Semiconductors Table 8: Characteristics …continued 27.5 mA measured on demo board; unless otherwise specified Symbol Parameter P load power gain L(1dB) compression IP3 ...

Page 5

Philips Semiconductors Figure 2 Fig 2. Printed-circuit board layout and component view for typical application Table 9: Component C1 BGM1013_4 Product data sheet shows the PCB layout used for the typical application ...

Page 6

Philips Semiconductors 9.1 Flat gain application between 800 MHz and 2.2 GHz By changing the components at the output of the amplifier, a flatter gain can be obtained. The gain 5.7 dBm at 2.2 GHz. ...

Page 7

Philips Semiconductors Fig 4. Input reflection coefficient (s Fig 5. Output reflection coefficient (s BGM1013_4 Product data sheet 135 0.5 0.2 0 0.2 0.5 180 0.2 0.5 135 I = 27.5 mA dBm; ...

Page 8

Philips Semiconductors (dB 1000 I = 27.5 mA dBm Fig 6. Isolation ( ...

Page 9

Philips Semiconductors 6 NF (dB) 5 500 1000 1500 ( Fig 10. Noise figure ...

Page 10

Philips Semiconductors Table 11: Scattering parameters 27.5 mA dBm (MHz Magnitude Angle (ratio) (deg) 100 0.259 19.3 200 0.258 3.2 400 0.270 25.6 600 ...

Page 11

Philips Semiconductors 10. Package outline Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE ...

Page 12

Philips Semiconductors 11. Revision history Table 12: Revision history Document ID Release date BGM1013_4 20060501 • Modifications: Figure 3 • Table 10 BGM1013_3 20041209 BGM1013_2 20041130 BGM1013_1 20040831 BGM1013_4 Product data sheet Data sheet status Change notice Product data sheet ...

Page 13

Philips Semiconductors 12. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 14

Philips Semiconductors 16. Contents 1 Product profi 1.1 General description ...

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