BGA2011,115 NXP Semiconductors, BGA2011,115 Datasheet
BGA2011,115
Specifications of BGA2011,115
934056365115
BGA2011 T/R
Related parts for BGA2011,115
BGA2011,115 Summary of contents
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DATA SHEET dbook, halfpage BGA2011 900 MHz high linear low noise amplifier Product specification Supersedes data of 2000 Sep 06 DISCRETE SEMICONDUCTORS MBD128 2000 Dec 04 ...
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... NXP Semiconductors 900 MHz high linear low noise amplifier FEATURES Low current, low voltage High linearity High power gain Low noise Integrated temperature compensated biasing Control pin for adjustment bias current. APPLICATIONS RF front end ...
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... NXP Semiconductors 900 MHz high linear low noise amplifier THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction th j-s to solder point CHARACTERISTICS RF input AC coupled SYMBOL PARAMETER I supply current S I control current C R return losses input return losses output L OUT insertion power gain ...
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... NXP Semiconductors 900 MHz high linear low noise amplifier APPLICATION INFORMATION handbook, full pagewidth List of components (see Fig.2) COMPONENT DESCRIPTION C1, C2 multilayer ceramic chip capacitor C3, C5 multilayer ceramic chip capacitor C4 multilayer ceramic chip capacitor C6 multilayer ceramic chip capacitor L1 SMD inductor L2 SMD inductor Note 1. The stripline (w = 0.7 mm gold plated double copper-clad printed-circuit board ( ...
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... NXP Semiconductors 900 MHz high linear low noise amplifier 30 handbook, halfpage gain (dB max 1000 = 30 dBm mA Fig.3 Insertion gain (s 21 functions of frequency; typical values. 20 handbook, halfpage (dB −3 − 30 dBm 900 MHz Fig.5 Insertion gain as a function of control current; typical values. ...
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... NXP Semiconductors 900 MHz high linear low noise amplifier 2 handbook, halfpage NF (dB) 1.6 1.2 0.8 0 900 MHz Fig.7 Noise figure as a function of supply current; typical values. Scattering parameters = 30 dBm MAGNITUDE ANGLE (MHz) (ratio) (deg) 22.45 100 0.553 42.12 200 0.499 ...
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... NXP Semiconductors 900 MHz high linear low noise amplifier handbook, full pagewidth 180° = 30 dBm mA Fig.8 Common emitter input reflection coefficient (s handbook, full pagewidth 180° = 30 dBm mA Fig.9 Common emitter forward transmission coefficient (s 2000 Dec 04 90° +1 135° ...
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... NXP Semiconductors 900 MHz high linear low noise amplifier handbook, full pagewidth 180° = 30 dBm mA Fig.10 Common emitter reverse transmission coefficient (s handbook, full pagewidth 180° = 30 dBm mA Fig.11 Common emitter output reflection coefficient (s 2000 Dec 04 90° 135° ...
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... NXP Semiconductors 900 MHz high linear low noise amplifier PACKAGE OUTLINE Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.30 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 2000 Dec scale 2.2 1.35 2 ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...