BGM1014,115 NXP Semiconductors, BGM1014,115 Datasheet - Page 3

• Manufacturer Part Number: BGM1014,115
• Description: MMIC AMPLIFIER SOT-363
• Manufacturer: NXP Semiconductors
• Type: MMIC Wideband Amplifierr

Specifications of BGM1014,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Current - Supply: 17mA ~ 25mA
• Frequency: 0Hz ~ 2.2GHz
• Gain: 31.5dB ~ 33dB
• Noise Figure: 4.2dB ~ 4.3dB
• P1db: 12.5dBm ~ 12.9dBm
• Rf Type: ISM
• Test Frequency: 1GHz
• Voltage - Supply: 5 V ~ 6 V
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Supply Current: 30 mA
• Operating Temperature Range: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Manufacturer's Type: Broadband Amplifier
• Number Of Channels: 1
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (typ): 5V
• Operating Supply Voltage (max): 5.5V
• Package Type: SOT-363
• Mounting: Surface Mount
• Pin Count: 6
• Noise Figure (typ): 4.1@2200MHzdB
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2077-2; 934059057115; BGM1014 T/R

Philips Semiconductors
7. Thermal characteristics
Table 7:
8. Characteristics
Table 8:
V
9397 750 14499
Product data sheet
Symbol
R
Symbol Parameter
V
I
NF
B
K
P
P
s
s
s
s
S
S
S
L(sat)
L(1dB)
th(j-sp)
21
11
22
12
= 5 V; I
2
2
2
2
S
DC supply voltage
supply current
insertion power gain
input return loss
output return loss
isolation
noise figure
bandwidth
stability factor
saturated load power
load power at 1 dB gain
compression
Thermal characteristics
Characteristics
= 21.1 mA; T
Parameter
thermal resistance from junction to solder point
j
= 25 C; measured on demo board; unless otherwise specified.
Conditions
RF input; AC coupled
see
f = 1 GHz
f = 2.2 GHz
Z
Z
see
see
3 dB below flat gain at f = 1 GHz
see
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
L
L
f = 100 MHz
f = 1 GHz
f = 1.8 GHz
f = 2.2 GHz
f = 2.6 GHz
f = 3 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
= 50
= 75
Figure 4
Figure 3
Figure 7
Figure 8
Rev. 01 — 11 March 2005
Conditions
P
tot
= 200 mW; T
sp
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
90 C
Min
-
17
29.0
31.5
34.0
33.0
29.0
25.0
11
7.5
15
12
12
12
40
35
-
-
-
1.5
0.9
12.5
8.8
10.5
5.0
MMIC wideband amplifier
Typ
5
21.0
30.0
32.3
35.2
34.1
30.5
26.4
12.2
8.8
18.9
16.7
16.8
17.7
42
37
4.2
4.1
2.5
1.6
1.0
12.9
9.3
11.2
5.7
BGM1014
Typ
300
Max
6
25
31.0
33.0
36.5
35.5
32.0
28.0
-
-
-
-
-
-
-
-
4.3
4.3
-
-
-
-
-
-
-
Unit
K/W
3 of 13
Unit
V
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
GHz
dBm
dBm
dBm
dBm