SGA-8343Z Sirenza Microdevices Inc, SGA-8343Z Datasheet - Page 2

IC AMP HBT SIGE 6GHZ SOT-343

SGA-8343Z

Manufacturer Part Number
SGA-8343Z
Description
IC AMP HBT SIGE 6GHZ SOT-343
Manufacturer
Sirenza Microdevices Inc
Datasheet

Specifications of SGA-8343Z

Current - Supply
50mA
Frequency
0Hz ~ 6GHz
Gain
17.5dB
Noise Figure
1.4dB ~ 1.75dB
P1db
7.5dB ~ 9dBm
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Rf Type
PCS, RFiD, 3G
Test Frequency
1.95GHz
Voltage - Supply
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
599-1055-2

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SGA-8343(Z)
Typical Performance - Engineering Application Circuits
Peak Performance Under Optimum Matching Conditions
2 of 14
Absolute Maximum Ratings
Collector Current (ICE)
Base Current (IB)
Collector - Emitter Voltage (VCE)
Collector - Base Voltage (VCB)
Emitter - Base Voltage (VEB)
RF Input Power (PIN)
Storage Temperature Range (TSTOR)
Power Dissipation (PDISS)
operating Junction Temperature (TJ)
Operation of this device beyond any one of these limits may cause permanent dam-
[3] POUT=0dBm per tone, 1MHz tone spacing.
Refer to the application note for additional RF data, PCB layouts, BOMs, biasing instructions, and other key issue to be considered.
[2] Z
[3] Z
[4] Z
Note: Optimum NF, P1dB, and OIP3 performance cannot be achieved simultaneously.
(GHz)
Freq
1.575
0.90
1.90
2.40
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
S
S
S
(GHz)
Freq
=
=Z
=Z
0.90
0.90
1.90
1.90
2.40
2.40
SOPT
SOPT
OPT
Parameter
, Z
, Z
, Z
L
L
L
=Z
53.0
=Z
=Z
VS
(V)
3.3
5.0
3.3
L
*, The input matching circuit loss have been de-embedded.
LOPT
LOPT
, where Z
, where Z
VCE
(V)
2
3
2
3
2
3
VCE
(V)
3.0
2.7
3.0
2.7
SOPT
SOPT
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
and Z
and Z
(mA)
ICQ
LOPT
LOPT
12
10
12
10
(mA)
ICQ
10
10
10
10
10
10
have been tuned for max P1dB (current allowed to drive-up with constant VCE).
have been tuned for max OIP3.
-40 to +150
Rating
+150
350
4.5
72
12
1
5
5
(dB)
1.25
1.25
NF
1.4
1.6
(dB)
0.90
0.94
1.05
1.10
1.15
1.18
NF
Gain
(dB)
18.2
15.7
16.5
14.4
[2]
Unit
dBm
mW
mA
mA
°C
°C
V
V
V
(dBm)
P1dB
6.8
GMAX
9
9
9
(dB)
23.7
23.9
19.1
19.3
17.4
17.7
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
OIP3
(dBm)
27.3
26.5
27.8
27.5
Caution! ESD sensitive device.
[1]
(dBm)
P1dB
10
13
10
13
10
13
S11
(dB)
-16
-10
-13
-9
[4]
S22
(dB)
(dBm)
-25
-18
-24
-24
OIP3
25
29
25
29
25
29
[4]
series feedback
Comments
DS100111

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