RF2312TR7 RFMD, RF2312TR7 Datasheet - Page 2

• Manufacturer Part Number: RF2312TR7
• Description: IC AMP HBT GAAS CATV 8-SOIC
• Manufacturer: RFMD

Specifications of RF2312TR7

• Current - Supply: 40mA ~ 120mA
• Frequency: 0Hz ~ 2.5GHz
• Gain: 14.5dB ~ 15.1dB
• Noise Figure: 3.8dB ~ 4.3dB @ 300MHz ~ 1Ghz
• P1db: 17dBm ~ 18.5dBm
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Rf Type: ISM, Broadcast Television
• Test Frequency: 900MHz
• Voltage - Supply: 5.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 689-1007-2

3-2
Absolute Maximum Ratings
Input RF Power
Output Load VSWR
Ambient Operating Temperature
Storage Temperature
Overall (50Ω)
Frequency Range
Gain
Noise Figure
Input VSWR
Output VSWR
Output IP
Output IP
Output IP
Output P
Output P
Output P
Saturated Output Power
Saturated Output Power
Saturated Output Power
Reverse Isolation
Thermal
Theta
Mean Time To Failure
Theta
Mean Time To Failure
Power Supply
Device Voltage (V
Operating Current Range
RF2312
JC
JC
1dB
1dB
1dB
Parameter
Parameter
3
3
3
D
)
Min.
14.5
+40
+33
+30
+21
+20
+17
40
-40 to +150
-40 to +85
Rating
Specification
20:1
+18
DC to 2500
114.05
Typ.
+18.5
+22.5
+20.5
114.9
1.7:1
1.4:1
2170
2170
15.1
+42
+36
+33
+22
+21
+23
100
3.8
4.2
5.5
5.0
20
Max.
Unit
dBm
120
4.3
4.8
2:1
2:1
°C
°C
Unit
°C/W
years
°C/W
years
MHz
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
mA
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
dB
dB
dB
dB
V
V
T=25°C, V
3dB Bandwidth
From 50MHz to 300MHz, -30 to +70 °C
From 300MHz to 1000MHz, -30 to +70 °C
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
At 100MHz
At 500MHz
At 900MHz
At 100MHz
At 500MHz
At 900MHz
At 100MHz
At 500MHz
At 900MHz
I
T
No RF Input/Output
T
I
T
No RF Input/Output
T
On pin 8, I
On pin 8, I
V
R
CC
CC
AMB
AMB
J
J
CC
Caution! ESD sensitive device.
C
=149°C
=165°C
=30Ω, 50Ω System, P
=100mA, P
=120mA, P
=9.0V, R
=+85°C
=+85°C
CC
CC
CC
=100mA
=40mA
C
=9V, Freq = 900 MHz,
DISS
DISS
=30Ω
Condition
=0.555W, T
=0.702W, T
IN
=-4dBm
Rev C6 051025
AMB
AMB
=85°C,
=85°C,