SBA-5086Z Sirenza Microdevices Inc, SBA-5086Z Datasheet - Page 2

• Manufacturer Part Number: SBA-5086Z
• Description: IC AMP HBT 5000MHZ SOT-86
• Manufacturer: Sirenza Microdevices Inc

Specifications of SBA-5086Z

• Current - Supply: 72mA ~ 88mA
• Frequency: 0Hz ~ 5GHz
• Gain: 15.7dB ~ 18.7dB
• Noise Figure: 4.5dB ~ 5.5dB
• P1db: 18dBm ~ 19.5dBm
• Package / Case: SOT-86
• Rf Type: Cellular, GSM, PCS, UMTS
• Test Frequency: 1.95GHz
• Voltage - Supply: 4.7 V ~ 5.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 599-1002-2

SBA-5086(Z)
Typical Performance at Key Operating Frequencies
2 of 6
Absolute Maximum Ratings
Device Current (I
Device Voltage (V
RF Input Power
Junction Temp (T
Operating Temp Range (T
Storage Temp
Operating Dissipated Power
Operation of this device beyond any one of these limits may cause permanent dam-
Bias Conditions should also satisfy the following expression:
Test Conditions: V
Output Third Order Intercept
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
I
D
Output Power at 1dB
V
Output Return Loss
Small Signal Gain
Input Return Loss
Reverse Isolation
D
Parameter
<(T
Compression
Noise Figure
5.5
4.5
3.5
2.5
5
4
3
2
J
Parameter
0
-T
Point
L
)/R
D
J
D
)
S
)
)
TH
=8V, I
, j-l and T
0.5
D
L
Noise Figure vs Frequency
)
=80mA Typ., OIP
L
Frequency (GHz)
=T
LEAD
Unit
dBm
dBm
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dB
dB
dB
dB
dB
1
3
Tone Spacing=1MHz, P
100MHz
-40 to +85
20.4
36.4
19.8
22.5
Rating
4.2
1.5
31
26
+150
+150
0.65
130
+17
21
20
19
18
17
16
15
6
0
+25c
-40c
+85c
0.5
2
500MHz
36.2
19.7
22.8
20.1
OUT
4.5
20
26
1
per tone=0dBm, R
P1 dB vs Frequency
Unit
Frequency (GHz)
dBm
mA
°C
°C
°C
W
V
1.5
850MHz
19.0
36.9
19.5
17.5
4.2
2
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
25
23
BIAS
40
38
36
34
32
30
28
26
24
22
20
2.5
=39Ω, T
0
+25c
-40c
+85c
Caution! ESD sensitive device.
1950MHz
0.5
3
L
=25°C, Z
34.0
19.5
13.0
19.0
17.2
4.4
23
3.5
1
OIP3 vs Frequency
S
Frequency (GHz)
=Z
1.5
L
2400MHz
=50Ω
15.8
33.7
18.7
12.9
19
23
2
-
2.5
EDS-102742 Rev E
3500MHz
3
+25c
-40c
+85c
13.7
30.8
12.4
18.7
17.1
23
-
3.5