IC AMP MMIC HEMT 25W 780019PKG

CMPA0060025F

Manufacturer Part NumberCMPA0060025F
DescriptionIC AMP MMIC HEMT 25W 780019PKG
ManufacturerCree Inc
CMPA0060025F datasheet
 


Specifications of CMPA0060025F

Current - Supply20mA ~ 12AFrequency20MHz ~ 6GHz
Gain17dBPackage / Case780019
Test Frequency20MHz ~ 6GHzVoltage - Supply10 V ~ 50 V
Lead Free Status / RoHS StatusLead free / RoHS CompliantRf Type-
Noise Figure-P1db-
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CMPA0060025F
25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier
Cree’s CMPA0060025F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated
electron drift velocity and higher thermal conductivity. GaN HEMTs
also offer greater power density and wider bandwidths compared to Si
and GaAs transistors. This MMIC enables extremely wide bandwidths
to be achieved in a small footprint screw-down package.
Typical Performance Over 20 MHz - 6.0 GHz
Parameter
20 MHz
Gain
21.4
Output Power @ P
= 32 dB
26.9
IN
Power Gain @ P
12.3
1
SAT
Efficiency @ P
= 32 dB
63
IN
Note
: P
is defined as the RF output power where the device starts to draw positive gate current in the range of 2-4 mA.
1
SAT
Note
: V
= 50 V, I
= 500 mA
2
DD
DQ
Features
17 dB Small Signal Gain
25 W Typical P
SAT
Operation up to 50 V
High Breakdown Voltage
High Temperature Operation
0.5” x 0.5” total product size
(T
= 25˚C)
C
0.5 GHz
1.0 GHz
2.0 GHz
3.0 GHz
20.1
19.3
16.7
16.6
30.2
26.3
23.4
24.5
12.8
12.2
11.7
11.9
55
40
31
33
Applications
Ultra Broadband Amplifiers
Test Instrumentation
EMC Amplifier
Drivers
Subject to change without notice.
www.cree.com/wireless
4.0 GHz
5.0 GHz
6.0 GHz
Units
16.8
15.7
15.5
dB
24.0
20.9
18.6
W
11.8
11.3
10.7
dB
31
28
26
%
1

CMPA0060025F Summary of contents

  • Page 1

    ... CMPA0060025F MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors ...

  • Page 2

    ... Maximum Forward Gate Current Soldering Temperature 1 Screw Torque Thermal Resistance, Junction to Case Case Operating Temperature 2,3 Note: Refer to the Application Note on soldering at 1 Measured for the CMPA0060025F Electrical Characteristics (Frequency = 20 MHz to 6.0 GHz unless otherwise stated; T Characteristics Symbol DC Characteristics Gate Threshold Voltage V ...

  • Page 3

    ... Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CMPA0060025F Rev 1.1, Preliminary 0 -5 -10 ...

  • Page 4

    ... Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CMPA0060025F Rev 1.1, Preliminary Power Gain ...

  • Page 5

    ... Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CMPA0060025F Rev 1.1, Preliminary Efficiency vs Input Power Function of Frequency 70% ...

  • Page 6

    ... General Device Information The CMPA0060025F is a GaN HEMT MMIC Power Amplifier, which operates between 20 MHz - 6.0 GHz. The amplifier typically provides small signal gain and 25 W saturated output power with an associated power added efficiency of better than 20 %. The wideband amplifier’s input and output are internally matched to 50 Ohm. ...

  • Page 7

    ... CMPA0060025F Power Dissipation De-rating Curve Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association ...

  • Page 8

    ... CMPA0060025F-TB Demonstration Amplifier Circuit CMPA0060025F-TB Demonstration Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association ...

  • Page 9

    ... CMPA0060025F-TB Demonstration Designator J1, Notes The CMPA0060025F is connected to the PCB with 2.0 mil Au bond wires external bias T is required. 2 Product Dimensions CMPA0060025F (Package Type — 780019) Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

  • Page 10

    ... Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 10 CMPA0060025F Rev 1.1, Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1 ...