MMH3111NT1 Freescale Semiconductor, MMH3111NT1 Datasheet

TRANS GAAS HFET SOT-89

MMH3111NT1

Manufacturer Part Number
MMH3111NT1
Description
TRANS GAAS HFET SOT-89
Manufacturer
Freescale Semiconductor
Type
General Purpose Amplifierr
Datasheet

Specifications of MMH3111NT1

Current - Supply
150mA
Frequency
250MHz ~ 4GHz
Gain
12dB
Noise Figure
3.2dB
P1db
22.5dBm
Package / Case
TO-243-3, SC-62, SOT-89
Rf Type
Cellular, PCS, ISM, WLL
Test Frequency
900MHz
Voltage - Supply
5V
Number Of Channels
1
Operating Frequency
4000 MHz
Operating Supply Voltage
5 V
Supply Current
190 mA @ 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Technology
Broadband Amplifier
Manufacturer's Type
Broadband Amplifier
Frequency (max)
4GHz
Operating Supply Voltage (typ)
5V
Package Type
SOT-89
Mounting
Surface Mount
Pin Count
3 +Tab
Noise Figure (typ)
3.2@900MHzdB
Noise Figure Typ
3.2dB
Rf Ic Case Style
SOT-89
No. Of Pins
3
Frequency Max
4000MHz
Filter Terminals
Solder
Frequency Min
250MHz
Supply Voltage Max
6V
Rohs Compliant
Yes
No. Of Amplifiers
1
Supply Voltage Range
5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMH3111NT1
MMH3111NT1TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMH3111NT1
Manufacturer:
FREESCALE
Quantity:
500
Part Number:
MMH3111NT1
Manufacturer:
FREESCALE
Quantity:
20 000
Heterostructure Field Effect
Transistor (GaAs HFET)
Broadband High Linearity Amplifier
input and output prematched. It is designed for a broad range of Class A,
small--signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 250 to 4000 MHz such as Cellular,
PCS, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.
© Freescale Semiconductor, Inc., 2007--2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
Table 1. Typical Performance
Table 3. Thermal Characteristics
Features
• Frequency: 250 to 4000 MHz
• P1dB: 22.5 dBm @ 900 MHz
• Small--Signal Gain: 12 dB @ 900 MHz
• Third Order Output Intercept Point: 44 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Prematched to 50 Ohms
• Internally Biased
• Low Cost SOT--89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.
1. V
The MMH3111NT1 is a General Purpose Amplifier that is internally
Small--Signal Gain
Input Return Loss
Output Return Loss
Power Output @1dB
Third Order Output
Thermal Resistance, Junction to Case
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
(S21)
(S11)
(S22)
Compression
Intercept Point
Characteristic
Select Documentation/Application Notes -- AN1955.
DD
= 5 Vdc, T
A
= 25°C, 50 ohm system
Symbol
P1db
ORL
IRL
IP3
G
p
(1)
Characteristic
MHz
22.5
900
--14
--14
12
44
(V
DD
= 5 Vdc, I
2140
MHz
11.3
--15
--19
22
44
3500
MHz
--16
--14
DD
10
22
42
= 150 mA, T
dBm
dBm
Unit
dB
dB
dB
C
= 25°C)
Table 2. Maximum Ratings
2. For reliable operation, the junction temperature should not
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
exceed 150°C.
Rating
Symbol
R
θJC
Document Number: MMH3111NT1
(2)
MMH3111NT1
250- -4000 MHz, 12 dB
CASE 1514- -02, STYLE 2
Symbol
GaAs HFET
Value
V
T
I
P
22.5 dBm
T
DD
DD
stg
37.5
in
J
PLASTIC
SOT- -89
1 2
(3)
--65 to +150
3
Value
Rev. 2, 4/2010
300
150
20
6
MMH3111NT1
°C/W
Unit
dBm
Unit
mA
°C
°C
V
1

Related parts for MMH3111NT1

MMH3111NT1 Summary of contents

Page 1

... Heterostructure Field Effect Transistor (GaAs HFET) Broadband High Linearity Amplifier The MMH3111NT1 is a General Purpose Amplifier that is internally input and output prematched designed for a broad range of Class A, small--signal, high linearity, general purpose applications suitable for applications with frequencies from 250 to 4000 MHz such as Cellular, PCS, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF ...

Page 2

... Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure (1) Supply Current (1) Supply Voltage 1. For reliable operation, the junction temperature should not exceed 150°C. MMH3111NT1 Vdc, 900 MHz 25°C, 50 ohm system, in Freescale Application Circuit Symbol G p ...

Page 3

... Machine Model (per EIA/JESD 22--A115) Charge Device Model (per JESD 22--C101) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22--A113, IPC/JEDEC J--STD--020 RF Device Data Freescale Semiconductor Figure 1. Functional Diagram Class 1A (Minimum) A (Minimum) IV (Minimum) Rating Package Peak Temperature 1 260 Unit °C MMH3111NT1 3 ...

Page 4

... P , OUTPUT POWER (dBm) out Figure 4. Small- -Signal Gain versus Output Power 160 140 120 100 DRAIN VOLTAGE (V) DD Figure 6. Drain Current versus Drain Voltage MMH3111NT1 4 50 OHM TYPICAL CHARACTERISTICS 0 --10 --20 25°C -- Vdc DD -- Figure 3. Input/Output Loss versus Frequency Vdc 150 mA DD ...

Page 5

... Channel Power Ratio versus Output Power Vdc 900 MHz, 10 dBm per Tone DD Two--Tone Measurements, 1 MHz Tone Spacing TEMPERATURE (_C) versus Case Temperature 125 130 135 140 145 T , JUNCTION TEMPERATURE (° Vdc 150 150 mA 2140 MHz OUTPUT POWER (dBm) out MMH3111NT1 100 150 ...

Page 6

... Part C1 Chip Capacitors C3 0.1 μF Chip Capacitor C4 1 μF Chip Capacitor C5 0.7 pF Chip Capacitor C6 0.4 pF Chip Capacitor Chip Inductor Chip Inductor R1 0 Ω, 1/10 W Chip Resistor MMH3111NT1 6 V SUPPLY R1 L1 DUT 0.403″ x 0.058″ Microstrip Z7 0.086″ x 0.058″ Microstrip Z8 0.261″ ...

Page 7

... Figure 17. 50 Ohm Test Circuit Schematic Vdc 150 mA DD 2200 2300 Figure 19. 50 Ohm Test Circuit Component Layout Description 06035J470BBS C0603C104J5RAC C0603C105J5RAC 06035J0R7BBS 12105J0R4BBS HK160856NJ--T CRCW06030000FKEA OUTPUT 4 MMG30XX Rev 2 Part Number Manufacturer AVX Kemet Kemet AVX AVX Taiyo Yuden Vishay MMH3111NT1 C6 7 ...

Page 8

... Part C1 Chip Capacitors C3 0.1 μF Chip Capacitor C4 1 μF Chip Capacitor C5 0.8 pF Chip Capacitor C6 0.4 pF Chip Capacitor Chip Inductor R1 0 Ω, 1/10 W Chip Resistor MMH3111NT1 8 DUT 0.075″ x 0.058″ Microstrip Z6 0.403″ x 0.058″ Microstrip Z7 0.347″ x 0.058″ Microstrip PCB Getek Grade ML200C, 0.031″ ...

Page 9

... MMH3111NT1 9 ...

Page 10

... MMH3111NT1 10 50 OHM TYPICAL CHARACTERISTICS ( Vdc 150 mA 25°C, 50 Ohm System) (continued ∠ φ 3.502 89.764 0.120 3.480 87 ...

Page 11

... POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH. 7.62 0.305 diameter 2.49 2.54 MMH3111NT1 11 ...

Page 12

... MMH3111NT1 12 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MMH3111NT1 13 ...

Page 14

... MMH3111NT1 14 RF Device Data Freescale Semiconductor ...

Page 15

... Apr. 2010 • Changed Maximum Ratings table value for RF input power from dBm as a result of improvements made in the measurement method and the capability of the device • Added .s2p File availability to Product Software Device Data Freescale Semiconductor REVISION HISTORY Description MMH3111NT1 15 ...

Page 16

... Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com MMH3111NT1 Document Number: MMH3111NT1 Rev. 2, 4/2010 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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