MW4IC2230NBR1 Freescale Semiconductor, MW4IC2230NBR1 Datasheet
MW4IC2230NBR1
Specifications of MW4IC2230NBR1
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MW4IC2230NBR1 Summary of contents
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... Freescale Semiconductor Technical Data Replaced by MW4IC2230NBR1(GNBR1). There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230M wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage ( Volts) LDMOS IC technology and integrates a multi - stage structure ...
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... I = 350 mA, DD DQ1 DQ2 — 43 — — ±5 — — 0.13 — — ±1 — — 1.6 — — ±15 — (continued) RF Device Data Freescale Semiconductor Unit Vdc Vdc °C °C dBm Unit Unit °C Unit dB dB dBc ° ns ° ...
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... MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss RF Device Data Freescale Semiconductor (continued) = 25°C unless otherwise noted) C Symbol = 245 mA 2112.5 MHz 2122.5 MHz and f1 = 2157.5 MHz 2167.5 MHz, ...
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... Quiescent Current 9 Temperature Compensation 1.120″ x 0.090″ Microstrip Z7 0.340″ x 0.090″ Microstrip PCB Taconic TLX8 - 0300, 0.030″, ε Description OUTPUT C10 C11 C12 2.55 r Part Number Manufacturer TAJD106K035 AVX 100B8R2CW ATC 100B1R8BW ATC 100B0R3BW ATC RF Device Data Freescale Semiconductor RF ...
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... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MW4IC2230MBR1(GMBR1) Test Circuit Component Layout ...
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... FREQUENCY (MHz −10 −20 IRL −30 −40 −50 ACPR − 85_C C = 350 mA 265 mA DQ2 DQ3 25_C −30_C OUTPUT POWER (WATTS) AVG. out versus Output Power 0 − −20 IRL −30 −40 IM3 −50 ACPR −60 RF Device Data Freescale Semiconductor 10 ...
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... P , INPUT POWER (dBm) in Figure 9. Output Power versus Input Power 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 Figure 11. MTTF Factor versus Temperature Junction RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 2.00 Ideal 1.95 1.90 Actual 1.85 1.80 1.75 1.70 1.65 = 265 mA, 1.60 DQ3 1.55 1 ...
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... Device input impedance as measured from gate to ground. = Test circuit impedance as measured from drain to ground. Output Device Matching Under Network Test load = 26 dBm out Ω RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor NOTES MW4IC2230MBR1 MW4IC2230GMBR1 9 ...
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... MW4IC2230MBR1 MW4IC2230GMBR1 10 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MW4IC2230MBR1 MW4IC2230GMBR1 11 ...
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... MW4IC2230MBR1 MW4IC2230GMBR1 12 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MW4IC2230MBR1 MW4IC2230GMBR1 13 ...
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... MW4IC2230MBR1 MW4IC2230GMBR1 14 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MW4IC2230MBR1 MW4IC2230GMBR1 15 ...
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... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...