IC AMP RF GP 6000MHZ 5V SOT-89

MMG3007NT1

Manufacturer Part NumberMMG3007NT1
DescriptionIC AMP RF GP 6000MHZ 5V SOT-89
ManufacturerFreescale Semiconductor
TypeGeneral Purpose Amplifier
MMG3007NT1 datasheet
 


Specifications of MMG3007NT1

Current - Supply47mAFrequency0Hz ~ 6GHz
Gain19dBNoise Figure3.8dBm
P1db16dBmPackage / CaseSC-62, SOT-89, TO-243 (3 Leads + Tab)
Rf TypeCellular, PCS, PHS, WLLTest Frequency900MHz
Voltage - Supply5VNumber Of Channels1
Operating Frequency6000 MHzOperating Supply Voltage5 V
Supply Current55 mA @ 5 VMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTTechnologyBroadband Amplifier
Noise Figure Typ3.8dBRf Ic Case StyleSOT-89
No. Of Pins3Operating Temperature Range-65°C To +150°C
Frequency Max6GHzFilter TerminalsSMD
Rohs CompliantYesRf Transistor CaseSOT-89
Peak Reflow Compatible (260 C)YesLeaded Process CompatibleYes
Output Third Order Intercept Point, Ip330dBSupply Voltage Range5V
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesMMG3007NT1
MMG3007NT1TR
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Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
(InGaP HBT)
Broadband High Linearity Amplifier
The MMG3007NT1 is a General Purpose Amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small - signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz such as Cellular,
P C S , B W A , W L L , P H S , C AT V, V H F, U H F, U M T S a n d g e n e r a l
small - signal RF.
Features
• Frequency: 0 to 6000 MHz
• P1dB: 16 dBm @ 900 MHz
• Small - Signal Gain: 19 dB @ 900 MHz
• Third Order Output Intercept Point: 30 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Low Cost SOT - 89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
(1)
Table 1. Typical Performance
Characteristic
Symbol
900
MHz
Small - Signal Gain
G
19
p
(S21)
Input Return Loss
IRL
- 14
(S11)
Output Return Loss
ORL
- 20
(S22)
Power Output @1dB
P1db
16
Compression
Third Order Output
IP3
30
Intercept Point
1. V
= 5 Vdc, T
= 25°C, 50 ohm system
CC
C
Table 3. Thermal Characteristics
(V
Characteristic
Thermal Resistance, Junction to Case
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2005-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Table 2. Maximum Ratings
2140
3500
Unit
MHz
MHz
Supply Voltage
16.5
14
dB
Supply Current
RF Input Power
- 21
- 21
dB
Storage Temperature Range
Junction Temperature
- 17
- 25
dB
2. For reliable operation, the junction temperature should not
exceed 150°C.
15.5
16
dBm
29
28.5
dBm
= 5 Vdc, I
= 47 mA, T
= 25°C)
CC
CC
C
Document Number: MMG3007NT1
Rev. 5, 3/2008
MMG3007NT1
0 - 6000 MHz, 19 dB
16 dBm
InGaP HBT
1 2
3
CASE 1514 - 02, STYLE 1
SOT - 89
PLASTIC
Rating
Symbol
Value
V
7
CC
I
250
CC
P
10
in
T
- 65 to +150
stg
(2)
T
150
J
(3)
Symbol
Value
R
77
θJC
MMG3007NT1
Unit
V
mA
dBm
°C
°C
Unit
°C/W
1

MMG3007NT1 Summary of contents

  • Page 1

    ... Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The MMG3007NT1 is a General Purpose Amplifier that is internally input and output matched designed for a broad range of Class A, small - signal, high linearity, general purpose applications suitable for applications with frequencies from 0 to 6000 MHz such as Cellular small - signal RF ...

  • Page 2

    ... Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure (1) Supply Current (1) Supply Voltage 1. For reliable operation, the junction temperature should not exceed 150°C. MMG3007NT1 Vdc, 900 MHz 25°C, 50 ohm system, in Freescale Application Circuit Symbol G p ...

  • Page 3

    ... Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 RF Device Data Freescale Semiconductor Figure 1. Functional Diagram Class 1A (Minimum) A (Minimum) IV (Minimum) Rating Package Peak Temperature 1 260 Unit °C MMG3007NT1 3 ...

  • Page 4

    ... OUTPUT POWER (dBm) out Figure 4. Small - Signal Gain versus Output Power 100 4.2 4.4 4.6 4 COLLECTOR VOLTAGE (V) CC Figure 6. Collector Current versus Collector Voltage MMG3007NT1 4 50 OHM TYPICAL CHARACTERISTICS 0 −10 −20 − Vdc CC − Figure 3. Input/Output Return Loss versus 2140 MHz 17 ...

  • Page 5

    ... Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power Vdc 900 MHz 1 MHz Tone Spacing − TEMPERATURE (_C) versus Case Temperature 125 130 135 140 145 T , JUNCTION TEMPERATURE (° Vdc Vdc = OUTPUT POWER (dBm) out MMG3007NT1 80 100 150 ...

  • Page 6

    ... FREQUENCY (MHz) Figure 15. S21, S11 and S22 versus Frequency Table 8. 50 Ohm Test Circuit Component Designations and Values Part C1, C2, C3 0.01 μF Chip Capacitors C4 1000 pF Chip Capacitor L1 470 nH Chip Inductor Chip Resistor MMG3007NT1 6 V SUPPLY R1 L1 DUT 0.403″ x 0.058″ Microstrip PCB Getek Grade ML200C, 0.031″ ...

  • Page 7

    ... Getek Grade ML200C, 0.031″, ε Figure 17. 50 Ohm Test Circuit Schematic Vdc 2800 3300 3800 Figure 19. 50 Ohm Test Circuit Component Layout Description C0603C151J5RAC C0603C103J5RAC C0603C102J5RAC HK160856NJ - T ERJ3GEY0R00V OUTPUT 4 MMG30XX Rev 2 Part Number Manufacturer Kemet Kemet Kemet Taiyo Yuden Panasonic MMG3007NT1 7 ...

  • Page 8

    ... MMG3007NT1 8 50 OHM TYPICAL CHARACTERISTICS ( Vdc mA 25°C, 50 Ohm System ∠ φ 9.488476 175.169 0.07218 9.431009 172.714 ...

  • Page 9

    ... MMG3007NT1 9 ...

  • Page 10

    ... Recommended Solder Stencil Figure 20. Recommended Mounting Configuration MMG3007NT1 10 7.62 1.27 NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN ...

  • Page 11

    ... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MMG3007NT1 11 ...

  • Page 12

    ... MMG3007NT1 12 RF Device Data Freescale Semiconductor ...

  • Page 13

    ... RF Device Data Freescale Semiconductor MMG3007NT1 13 ...

  • Page 14

    ... Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc • Corrected S - Parameter table frequency column label to read “MHz” versus “GHz” and corrected frequency values from GHz to MHz MMG3007NT1 14 PRODUCT DOCUMENTATION REVISION HISTORY ...

  • Page 15

    ... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MMG3007NT1 Rev. 5, 3/2008 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...