BGA2709,115 NXP Semiconductors, BGA2709,115 Datasheet - Page 3

• Manufacturer Part Number: BGA2709,115
• Description: MMIC AMPLIFIER SOT-363
• Manufacturer: NXP Semiconductors
• Type: General Purpose Wideband Amplifierr

Specifications of BGA2709,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Current - Supply: 23.5mA
• Frequency: 1.8GHz
• Gain: 22.7dB
• Noise Figure: 4dB
• Rf Type: ISM
• Test Frequency: 1GHz
• Voltage - Supply: 5V ~ 6V
• Supply Current: 23.5 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• P1db: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2068-2; 934056949115; BGA2709 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
CHARACTERISTICS
V
2002 Aug 06
R
I
|s
R
R
|s
NF
BW
K
P
P
IP3
IP3
S
S
SYMBOL
SYMBOL
L(sat)
L 1 dB
MMIC wideband amplifier
th j-s
21
L IN
L OUT
12
= 5 V; I
(in)
(out)
|
|
2
2
S
= 23.5 mA; T
thermal resistance from junction to solder
point
supply current
insertion power gain
return losses input
return losses output
isolation
noise figure
bandwidth
stability factor
saturated load power
load power
input intercept point
output intercept point
PARAMETER
j
= 25 C unless otherwise specified.
PARAMETER
f = 100 MHz
f = 1 GHz
f = 1.8 GHz
f = 2.2 GHz
f = 2.6 GHz
f = 3 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
f = 1.6 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
at s
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2.2 GHz
at 1 dB gain compression; f = 1 GHz
at 1 dB gain compression; f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
21

2
3 dB below flat gain at 1 GHz
CONDITIONS
3
P
tot
= 200 mW; T
CONDITIONS
s
 90 C
7
3
19
21
21
22
21
20
18
9
9
17
20
31
34


3.1
1.3
1.8
11
5
3
7
20
12
MIN.
1.7
8.3
5.4
23.5
22.2
22.7
23.0
23.0
22.1
21.1
11
11
20
24
33
36
4.0
4.4
3.6
2.2
12.5
7.5
1
9
22
14
TYP.
VALUE
300
Product specification
32
23
24
24
24
23
22






4.4
4.9











BGA2709
MAX.
UNIT
K/W
dB
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
GHz


dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
UNIT