MMG3008NT1 Freescale Semiconductor, MMG3008NT1 Datasheet

IC AMP RF GP 6000MHZ 5V SOT-89

MMG3008NT1

Manufacturer Part Number
MMG3008NT1
Description
IC AMP RF GP 6000MHZ 5V SOT-89
Manufacturer
Freescale Semiconductor
Type
General Purpose Amplifierr
Datasheet

Specifications of MMG3008NT1

Current - Supply
38mA
Frequency
0Hz ~ 6GHz
Gain
18.5dB
Noise Figure
4dB
P1db
15dBm
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Rf Type
Cellular, PCS, PHS, WLL
Test Frequency
900MHz
Voltage - Supply
5V
Number Of Channels
1
Operating Frequency
6000 MHz
Operating Supply Voltage
5 V
Supply Current
48 mA @ 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Technology
Broadband Amplifier
Manufacturer's Type
Broadband Amplifier
Frequency (max)
6GHz
Operating Supply Voltage (typ)
5V
Package Type
SOT-89
Mounting
Surface Mount
Pin Count
3 +Tab
Noise Figure (typ)
4@900MHzdB
Rf Transistor Case
SOT-89
Filter Terminals
SMD
Peak Reflow Compatible (260 C)
Yes
Leaded Process Compatible
Yes
Output Third Order Intercept Point, Ip3
26dB
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMG3008NT1
MMG3008NT1TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMG3008NT1
Manufacturer:
FREESCALE
Quantity:
20 000
Heterojunction Bipolar Transistor
(InGaP HBT)
Broadband High Linearity Amplifier
input and output matched. It is designed for a broad range of Class A,
small - signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz such as Cellular,
P C S , B W A , W L L , P H S , C AT V, V H F, U H F, U M T S a n d g e n e r a l
small - signal RF.
© Freescale Semiconductor, Inc., 2005-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
Table 1. Typical Performance
Table 3. Thermal Characteristics
Features
• Frequency: 0 to 6000 MHz
• P1dB: 15 dBm @ 900 MHz
• Small - Signal Gain: 18.5 dB @ 900 MHz
• Third Order Output Intercept Point: 26 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Low Cost SOT - 89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
1. V
The MMG3008NT1 is a General Purpose Amplifier that is internally
Small - Signal Gain
Input Return Loss
Output Return Loss
Power Output @1dB
Third Order Output
Thermal Resistance, Junction to Case
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Characteristic
(S21)
(S11)
(S22)
Compression
Intercept Point
Select Documentation/Application Notes - AN1955.
CC
= 5 Vdc, T
C
= 25°C, 50 ohm system
Symbol
P1db
ORL
IRL
IP3
G
p
(1)
MHz
18.5
900
- 18
- 20
Characteristic
15
26
(V
CC
2140
MHz
25.5
- 22
- 18
16
14
= 5 Vdc, I
3500
MHz
- 20
- 16
13
14
25
CC
= 38 mA, T
dBm
dBm
Unit
dB
dB
dB
C
= 25°C)
Table 2. Maximum Ratings
2. For reliable operation, the junction temperature should not
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
exceed 150°C.
Rating
Symbol
R
θJC
Document Number: MMG3008NT1
(2)
MMG3008NT1
0 - 6000 MHz, 18.5 dB
CASE 1514 - 02, STYLE 1
Symbol
Value
V
InGaP HBT
T
I
P
T
CC
CC
stg
15 dBm
in
J
84
PLASTIC
SOT - 89
1 2
(3)
- 65 to +150
3
Value
Rev. 5, 3/2008
150
80
10
MMG3008NT1
6
°C/W
Unit
Unit
dBm
mA
°C
°C
V
1

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MMG3008NT1 Summary of contents

Page 1

... Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The MMG3008NT1 is a General Purpose Amplifier that is internally input and output matched designed for a broad range of Class A, small - signal, high linearity, general purpose applications suitable for applications with frequencies from 0 to 6000 MHz such as Cellular small - signal RF ...

Page 2

... Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure (1) Supply Current (1) Supply Voltage 1. For reliable operation, the junction temperature should not exceed 150°C. MMG3008NT1 Vdc, 900 MHz 25°C, 50 ohm system, in Freescale Application Circuit Symbol G p ...

Page 3

... Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 RF Device Data Freescale Semiconductor Figure 1. Functional Diagram Class 1A (Minimum) A (Minimum) IV (Minimum) Rating Package Peak Temperature 1 260 Unit °C MMG3008NT1 3 ...

Page 4

... MHz OUTPUT POWER (dBm) out Figure 4. Small - Signal Gain versus Output Power 4.2 4.4 4.6 4 COLLECTOR VOLTAGE (V) CC Figure 6. Collector Current versus Collector Voltage MMG3008NT1 4 50 OHM TYPICAL CHARACTERISTICS 0 −10 S22 −20 − Vdc CC − Figure 3. Input/Output Return Loss versus Vdc ...

Page 5

... Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power Vdc 900 MHz 1 MHz Tone Spacing − TEMPERATURE (_C) versus Case Temperature 125 130 135 140 145 T , JUNCTION TEMPERATURE (° Vdc Vdc mA 2140 MHz OUTPUT POWER (dBm) out MMG3008NT1 80 100 150 12 5 ...

Page 6

... FREQUENCY (MHz) Figure 15. S21, S11 and S22 versus Frequency Table 8. 50 Ohm Test Circuit Component Designations and Values Part C1, C2, C3 0.01 μF Chip Capacitors C4 1000 pF Chip Capacitor L1 470 nH Chip Inductor Chip Resistor MMG3008NT1 6 V SUPPLY R1 L1 DUT 0.403″ x 0.058″ Microstrip PCB Getek Grade ML200C, 0.031″ ...

Page 7

... Getek Grade ML200C, 0.031″, ε Figure 17. 50 Ohm Test Circuit Schematic Vdc S11 S22 2800 3300 3800 Figure 19. 50 Ohm Test Circuit Component Layout Description OUTPUT 4 MMG30XX Rev 2 Part Number Manufacturer C0603C151J5RAC Kemet C0603C103J5RAC Kemet C0603C102J5RAC Kemet HK160856NJ - T Taiyo Yuden ERJ3GEY0R00V Panasonic MMG3008NT1 7 ...

Page 8

... MMG3008NT1 8 50 OHM TYPICAL CHARACTERISTICS ( Vdc mA 25°C, 50 Ohm System ∠ φ 9.53422 174.957 0.07125 9.45692 172.557 ...

Page 9

... MMG3008NT1 9 ...

Page 10

... Recommended Solder Stencil Figure 20. Recommended Mounting Configuration MMG3008NT1 10 7.62 1.27 NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN ...

Page 11

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MMG3008NT1 11 ...

Page 12

... MMG3008NT1 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MMG3008NT1 13 ...

Page 14

... Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc • Corrected S - Parameter table frequency column label to read “MHz” versus “GHz” and corrected frequency values from GHz to MHz MMG3008NT1 14 PRODUCT DOCUMENTATION REVISION HISTORY ...

Page 15

... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MMG3008NT1 Rev. 5, 3/2008 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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