MMG3001NT1 Freescale Semiconductor, MMG3001NT1 Datasheet

IC AMP RF GP 3600MHZ 5.6V SOT-89

MMG3001NT1

Manufacturer Part Number
MMG3001NT1
Description
IC AMP RF GP 3600MHZ 5.6V SOT-89
Manufacturer
Freescale Semiconductor
Series
-r
Datasheet

Specifications of MMG3001NT1

Current - Supply
58mA
Frequency
40MHz ~ 3.6GHz
Gain
20dB
Noise Figure
4.1dB
P1db
18.5dBm
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Rf Type
General Purpose
Test Frequency
900MHz
Voltage - Supply
5.6V
Noise Figure Typ
4.1dB
Supply Current
58mA
Rf Ic Case Style
SOT-89
No. Of Pins
3
Operating Temperature Range
-65°C To +150°C
Frequency Max
3.6GHz
Filter Terminals
SMD
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMG3001NT1
MMG3001NT1TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMG3001NT1
Manufacturer:
FREESCALE
Quantity:
20 000
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
input and output matched. It is designed for a broad range of Class A,
small - signal, high linearity, general purpose applications. It is suitable for
applications with frequencies from 40 to 3600 MHz such as Cellular, PCS,
BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF.
Features
• Frequency: 40 - 3600 MHz
• P1dB: 18.5 dBm @ 900 MHz
• Small - Signal Gain: 20 dB @ 900 MHz
• Third Order Output Intercept Point: 32 dBm @ 900 MHz
• Single Voltage Supply
• Internally Matched to 50 Ohms
• Low Cost SOT - 89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
© Freescale Semiconductor, Inc., 2004-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
Table 1. Typical Performance
Table 3. Thermal Characteristics
1. V
The MMG3001NT1 is a General Purpose Amplifier that is internally
Small - Signal Gain
Input Return Loss
Output Return Loss
Power Output @1dB
Third Order Output
Thermal Resistance, Junction to Case
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
(S21)
(S11)
(S22)
Compression
Intercept Point
Characteristic
Select Documentation/Application Notes - AN1955.
CC
= 5.6 Vdc, T
C
= 25°C, 50 ohm system
Symbol
P1db
ORL
IRL
IP3
G
p
(1)
Characteristic
MHz
18.5
900
- 25
- 22
20
32
(V
CC
2140
MHz
- 25
- 18
= 5.6 Vdc, I
18
18
31
3500
MHz
15.5
28.5
- 19
- 17
16
CC
dBm
dBm
Unit
= 58 mA, T
dB
dB
dB
C
= 25°C)
Table 2. Maximum Ratings
2. For reliable operation, the junction temperature should not
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
exceed 150°C.
Rating
Symbol
R
θJC
Document Number: MMG3001NT1
(2)
MMG3001NT1
40 - 3600 MHz, 20 dB
CASE 1514 - 02, STYLE 1
Symbol
Value
V
T
InGaP HBT
I
P
T
CC
18.5 dBm
CC
stg
92.0
in
J
PLASTIC
1 2
SOT - 89
(3)
3
- 65 to +150
Value
Rev. 7, 3/2008
300
150
10
MMG3001NT1
7
°C/W
Unit
Unit
dBm
mA
°C
°C
V
1

Related parts for MMG3001NT1

MMG3001NT1 Summary of contents

Page 1

... Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3001NT1 is a General Purpose Amplifier that is internally input and output matched designed for a broad range of Class A, small - signal, high linearity, general purpose applications suitable for applications with frequencies from 40 to 3600 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF ...

Page 2

... Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure (1) Supply Current (1) Supply Voltage 1. For reliable operation, the junction temperature should not exceed 150°C. MMG3001NT1 2 = 5.6 Vdc, 900 MHz 25°C, 50 ohm system, in Freescale Application Circuit Symbol G p ...

Page 3

... Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 RF Device Data Freescale Semiconductor Figure 1. Functional Diagram Class 0 (Minimum) A (Minimum) IV (Minimum) Rating Package Peak Temperature 1 260 Unit °C MMG3001NT1 3 ...

Page 4

... OUTPUT POWER (dBm) out Figure 4. Small - Signal Gain versus Output Power 100 4.9 5 5.1 5.2 5.3 5 COLLECTOR VOLTAGE (V) CC Figure 6. Collector Current versus Collector Voltage MMG3001NT1 4 50 OHM TYPICAL CHARACTERISTICS 0 −10 −20 − 5.6 Vdc CC − Figure 3. Input/Output Return Loss versus ...

Page 5

... Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power = 5.6 Vdc CC − TEMPERATURE (_C) versus Case Temperature 125 130 135 140 T , JUNCTION TEMPERATURE (° 5.6 Vdc 5.6 Vdc mA 2140 MHz OUTPUT POWER (dBm) out MMG3001NT1 80 100 145 150 = ...

Page 6

... Chip Capacitor Chip Capacitor L1 470 nH Chip Inductor R1 8.2 W Chip Resistor Table 9. Supply Voltage versus R1 Values Supply Voltage 6 R1 Value 6.9 Note: To provide V = 5.6 Vdc and I CC MMG3001NT1 6 V SUPPLY R1 L1 DUT 0.403″ x 0.058″ Microstrip PCB Getek Grade ML200C, 0.031″, ε ...

Page 7

... Getek Grade ML200C, 0.031″, ε Figure 17. 50 Ohm Test Circuit Schematic C1 3800 2800 3300 Figure 19. 50 Ohm Test Circuit Component Layout Description OUTPUT 4 MMG30XX Rev 2 Part Number Manufacturer C0805C390J5RAC Kemet C0603C103J5RAC Kemet C0603C102J5RAC Kemet C0805C470J5RAC Kemet HK160856NJ - T Taiyo Yuden RK73B2ATTE8R2J KOA Speer MMG3001NT1 7 ...

Page 8

... MMG3001NT1 8 50 OHM TYPICAL CHARACTERISTICS (V = 5.6 Vdc mA 25°C, 50 Ohm System ∠ φ 10.80154 176.164 0.06918 10.61985 173.508 ...

Page 9

... MMG3001NT1 9 ...

Page 10

... Recommended Solder Stencil Figure 20. Recommended Mounting Configuration MMG3001NT1 10 7.62 1.27 NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN ...

Page 11

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MMG3001NT1 11 ...

Page 12

... MMG3001NT1 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MMG3001NT1 13 ...

Page 14

... Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc • Corrected S - Parameter table frequency column label to read “MHz” versus “GHz” and corrected frequency values from GHz to MHz MMG3001NT1 14 PRODUCT DOCUMENTATION REVISION HISTORY ...

Page 15

... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MMG3001NT1 Rev. 7, 3/2008 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

Related keywords