IC PWR AMP RF 26V 15W TO-272-16

MW4IC915NBR1

Manufacturer Part NumberMW4IC915NBR1
DescriptionIC PWR AMP RF 26V 15W TO-272-16
ManufacturerFreescale Semiconductor
MW4IC915NBR1 datasheet
 

Specifications of MW4IC915NBR1

Current - Supply60mAFrequency750MHz ~ 1GHz
Gain30dBPackage / CaseTO-272-16
Rf TypeCellular, CDMA, EDGE, GSM, TDMA, W-CDMAVoltage - Supply26V
Manufacturer's TypePower AmplifierNumber Of Channels1
Frequency (max)1GHzOperating Supply Voltage (min)26V
Operating Supply Voltage (max)28VPackage TypeTO-272 WB EP
MountingSurface MountPin Count16
Lead Free Status / RoHS StatusLead free / RoHS CompliantNoise Figure-
P1db-Test Frequency-
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Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC915NB/GNB wideband integrated circuit is designed for GSM
and GSM EDGE base station applications. It uses Freescale’s newest High
Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage
structure. Its wideband On- Chip design makes it usable from 750 to 1000 MHz.
The linearity performances cover all modulations for cellular applications: GSM,
GSM EDGE, TDMA, N - CDMA and W - CDMA.
Final Application
• Typical Performance: V
= 26 Volts, I
DD
P
= 15 Watts CW, Full Frequency Band (860 - 960 MHz)
out
Power Gain — 30 dB
Power Added Efficiency — 44%
Driver Application
• Typical GSM/GSM EDGE Performances: V
I
= 240 mA, P
= 3 Watts Avg., Full Frequency Band (869 - 894 MHz
DQ2
out
and 921 - 960 MHz)
Power Gain — 31 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = - 65 dBc
Spectral Regrowth @ 600 kHz Offset = - 83 dBc
EVM — 1.5%
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
• On - Chip Current Mirror g
Reference FET for Self Biasing Application
m
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
V
RD2
V
RG2
V
DS1
RF
in
V
RD1
V
RG1
V
GS1
Quiescent Current
Temperature Compensation
V
GS2
Figure 1. Functional Block Diagram
1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
= 60 mA, I
= 240 mA,
DQ1
DQ2
= 26 Volts, I
= 60 mA,
DD
DQ1
(1)
V
/RF
DS2
out
MW4IC915N
Rev. 7, 5/2006
MW4IC915NBR1
MW4IC915GNBR1
860 - 960 MHz, 15 W, 26 V
GSM/GSM EDGE, N - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC915NBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC915GNBR1
GND
1
GND
16
V
2
RD2
NC
15
V
3
RG2
V
4
DS1
V
5
RD1
RF
out/
RF
6
14
in
V
DS2
V
7
RG1
V
8
GS1
V
9
GS2
NC
10
13
NC
GND
GND
12
11
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
MW4IC915NBR1 MW4IC915GNBR1
1

MW4IC915NBR1 Summary of contents

  • Page 1

    ... MW4IC915NBR1 CASE 1329A - 272 GULL PLASTIC MW4IC915GNBR1 GND 1 GND RD2 RG2 V 4 DS1 V 5 RD1 RF out DS2 V 7 RG1 V 8 GS1 V 9 GS2 GND GND 12 11 (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 2. Pin Connections MW4IC915NBR1 MW4IC915GNBR1 1 ...

  • Page 2

    ... MHz 869.1 MHz and f1 = 960 MHz and f2 = 960.1 MHz, Two - Tone Power Gain Power Added Efficiency Intermodulation Distortion Input Return Loss 1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. MW4IC915NBR1 MW4IC915GNBR1 2 Stage 1, 26 Vdc Stage 2, 26 Vdc 240 mA ...

  • Page 3

    ... I = 240 mA, DQ1 DQ2 — 20 — — 30 — — 44 — — — — 1.5 — — — — — MW4IC915NBR1 MW4IC915GNBR1 Unit % dB ° ns ° Watts rms dBc dBc 3 ...

  • Page 4

    ... Microstrip Z4 0.171″ x 0.283″ Microstrip Z5 0.429″ x 0.283″ Microstrip Figure 3. MW4IC915NBR1(GNBR1) Test Fixture Schematic Table 6. MW4IC915NBR1(GNBR1) Test Fixture Component Designations and Values Part C1, C6, C9, C14 22 mF Tantalum Chip Capacitors C2, C5, C8, C11 1000 pF Chip Capacitors C3, C4, C7, C10, C16 ...

  • Page 5

    ... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MW4IC915NBR1(GNBR1) Test Fixture Component Layout RF Device Data Freescale Semiconductor ...

  • Page 6

    ... Microstrip Z3 0.468″ x 0.157″ Microstrip Z4 0.220″ x 0.157″ Microstrip Figure 5. MW4IC915NBR1(GNBR1) Reference Board Schematic Table 7. MW4IC915NBR1(GNBR1) Reference Board Component Designations and Values Part C1, C15 10 pF Chip Capacitors (0805), ACCU - P C2 5.6 pF Chip Capacitor (0805), ACCU - P ...

  • Page 7

    ... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 6. MW4IC915NBR1(GNBR1) Reference Board Component Layout RF Device Data Freescale Semiconductor ...

  • Page 8

    ... DQ1 DQ2 910 MHz 25_C 31 PAE 30 85_C 0 OUTPUT POWER (WATTS) out Figure 10. Power Gain and Power Added Efficiency versus Output Power MW4IC915NBR1 MW4IC915GNBR1 8 PAE IRL Vdc (PEP) out mA 240 mA DQ1 DQ2 Two−Tone Measurement 100 kHz Tone Spacing 880 900 920 ...

  • Page 9

    ... Vdc out mA 240 mA DQ1 DQ2 880 890 900 910 920 930 940 950 f, FREQUENCY (MHz) Frequency 25_C T = 85_C C −30_C Vdc mA 240 mA DQ1 DQ2 EDGE Modulation f = 910 MHz OUTPUT POWER (WATTS) out versus Output Power 85_C 25_C 100 MW4IC915NBR1 MW4IC915GNBR1 960 100 9 ...

  • Page 10

    ... Figure 17. Series Equivalent Input and Load Impedance MW4IC915NBR1 MW4IC915GNBR1 Ω load f = 900 MHz f = 980 MHz mA 240 mA P1dB DD DQ1 DQ2 out f Z load MHz Ω 900 3.23 - j4.30 910 3.24 - j4.36 920 3.25 - j4.42 930 3.25 - j4.47 940 3.23 - j4.52 950 3.21 - j4.56 960 3 ...

  • Page 11

    ... RF Device Data Freescale Semiconductor NOTES MW4IC915NBR1 MW4IC915GNBR1 11 ...

  • Page 12

    ... MW4IC915NBR1 MW4IC915GNBR1 12 NOTES RF Device Data Freescale Semiconductor ...

  • Page 13

    ... RF Device Data Freescale Semiconductor NOTES MW4IC915NBR1 MW4IC915GNBR1 13 ...

  • Page 14

    ... MW4IC915NBR1 MW4IC915GNBR1 14 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

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    ... RF Device Data Freescale Semiconductor MW4IC915NBR1 MW4IC915GNBR1 15 ...

  • Page 16

    ... MW4IC915NBR1 MW4IC915GNBR1 16 RF Device Data Freescale Semiconductor ...

  • Page 17

    ... RF Device Data Freescale Semiconductor MW4IC915NBR1 MW4IC915GNBR1 17 ...

  • Page 18

    ... MW4IC915NBR1 MW4IC915GNBR1 18 RF Device Data Freescale Semiconductor ...

  • Page 19

    ... RF Device Data Freescale Semiconductor MW4IC915NBR1 MW4IC915GNBR1 19 ...

  • Page 20

    ... RoHS- compliant and/ free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MW4IC915NBR1 MW4IC915GNBR1 MW4IC915N Rev. 7, 5/2006 20 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...