MW4IC2020NBR1 Freescale Semiconductor, MW4IC2020NBR1 Datasheet - Page 2

• Manufacturer Part Number: MW4IC2020NBR1
• Description: IC PWR AMP RF 26V 20W TO-272-16
• Manufacturer: Freescale Semiconductor
• Type: Power Amplifierr

Specifications of MW4IC2020NBR1

• Current - Supply: 80mA
• Frequency: 1.6GHz ~ 2.4GHz
• Gain: 29dB
• Package / Case: TO-272-16
• Rf Type: Cellular, GSM, EDGE, CDMA
• Voltage - Supply: 26V
• Number Of Channels: 1
• Power Supply Requirement: Single
• Single Supply Voltage (min): 26V
• Single Supply Voltage (max): 28V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 16
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• P1db: -
• Test Frequency: -
• Lead Free Status / Rohs Status: Compliant

2
MW4IC2020NBR1 MW4IC2020GNBR1
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Functional Tests (In Freescale Wideband 1805 - 1990 MHz Test Fixture, 50 ohm system) V
I
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
1805 MHz<Frequency<1990 MHz, 1 - Tone
DQ3
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Charge Device Model
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Power Gain
Drain Efficiency
Input Return Loss
Intermodulation Distortion
Saturated Pulsed Output Power
Quiescent Current Accuracy over Temperature ( - 10 to 85°C)
Gain Flatness in 30 MHz Bandwidth @ P
Deviation from Linear Phase in 30 MHz Bandwidth @ P
Delay @ P
Part - to - Part Phase Variation @ P
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select
(f = 1 kHz, Duty Cycle 10%)
= 300 mA, P
Select Documentation/Application Notes - AN1955.
Documentation/Application Notes - AN1977.
out
= 1 W CW Including Output Matching
out
= 20 W PEP, f1 = 1990 MHz, f2 = 1990.1 MHz and f1 = 1805 MHz, f2 = 1805.1 MHz, Two - Tone CW
Test Methodology
Characteristic
Test Conditions
Characteristic
out
f1 = 1805 MHz, f2 = 1805.1 MHz
f1 = 1990 MHz, f2 = 1990.1 MHz
Rating
= 1 W CW
(T
out
C
= 25°C unless otherwise noted)
= 1 W CW
1805- 1880 MHz
1930- 1990 MHz
out
Stage 1
Stage 2
Stage 3
= 1 W CW
(2)
DD
= 26 Vdc, I
Rating
3
Symbol
Delay
ΔI
IMD
P
G
IRL
ΦΔ
η
G
Φ
sat
QT
ps
D
DQ1
F
= 80 mA, I
Symbol
Symbol
V
R
V
T
P
DD
DSS
T
Package Peak Temperature
θJC
GS
stg
in
J
Min
= 26 Vdc, I
27
24
18
—
—
—
—
—
—
—
—
DQ2
= 200 mA, I
260
DQ1
M3 (Minimum)
C5 (Minimum)
2 (Minimum)
0.15
±0.5
±0.2
Typ
±10
- 32
1.8
29
26
20
33
±5
—
- 65 to +175
= 80 mA, I
Class
- 0.5, +65
- 0.5, +15
Value
Value
10.5
200
5.1
2.3
20
Freescale Semiconductor
DQ3
(1)
= 300 mA,
DQ2
Max
- 10
- 27
—
—
—
—
—
—
—
—
RF Device Data
= 200 mA,
(continued)
°C/W
Unit
Unit
dBm
Unit
Vdc
Vdc
Unit
°C
dBc
°C
°C
dB
dB
dB
ns
W
%
%
°
°