SDM-08060-B1F Sirenza Microdevices Inc, SDM-08060-B1F Datasheet

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SDM-08060-B1F

Manufacturer Part Number
SDM-08060-B1F
Description
MODULE PWR AMP 60W 894MHZ AB
Manufacturer
Sirenza Microdevices Inc
Datasheet

Specifications of SDM-08060-B1F

Current - Supply
600mA
Frequency
869MHz ~ 894MHz
Gain
17dB
P1db
65W
Package / Case
Module
Rf Type
CDMA, GSM, EDGE
Voltage - Supply
28V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
Test Frequency
-
Product Description
Sirenza Microdevices’ SDM-08060-B1F 65W power module is a
robust, impedance matched, single-stage, push-pull Class AB amplifier
module suitable for use as a power amplifier driver or output stage.
The power transistors are fabricated using Sirenza's latest, high perfor-
mance LDMOS process. It is a drop-in, no-tune solution for high
power applications requiring high efficiency, excellent linearity, and
unit-to-unit repeatability. It is internally matched to 50 ohms.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Broomfield, CO 80021
Quality Specifications
Key Specifications
Functional Block Diagram
Vgs
RF
Vgs
Gnd
Gnd
in
Test Conditions Z
2
1
Phase Linearity
Gain Flatness
Frequency
Efficiency
Efficiency
Symbol
+3V DC to +6 V DC
+3V DC to +6 V DC
Delay
ESD Rating
Gain
Parameter
P
IMD
R
IRL
1dB
TH
MTTF
Balun
180
0
Case Flange = Ground
o
in
o
= Z
Parameter
Frequency of Operation
Output Power at 1dB Compression, 881 MHz
Gain at 12W CDMA Output (Single Carrier IS-95), 881MHz
Peak to Peak Gain Variation, 869 - 894MHz
Drain Efficiency at 60W PEP, 880MHz and 881MHz
Drain Efficiency at 60W CW, 880MHz
Input Return Loss 12W CW Output Power, 869 - 894MHz
3rd Order IMD Product, 60W PEP, 880MHz and 881MHz
Signal Delay from Pin 3 to Pin 8
Deviation from Linear Phase (Peak to Peak)
Thermal Resistance (Junction to Case)
out
= 50Ω, V
Description
Human Body Model
200
o
C Channel
DD
180
= 28.0V, I
0
o
o
DQ1
Balun
+28V DC
+28V DC
= I
DQ2
Phone: (800) SMI-MMIC
=300mA T
Gnd
Vds
Vds
RF
Gnd
T
out
1
2
1
Flange
SDM-08060-B1F
SDM-08060-B1FY
869-894 MHz Class AB
65W Power Amplifier Module
Product Features
Applications
= 25ºC
Available in RoHS compliant packaging
50 W RF impedance
65W Output P
Single Supply Operation : Nominally 28V
High Gain: 17 dB at 880 MHz
High Efficiency: 46% at 880 MHz
ESD Protection: JEDEC Class 2 (2000V HBM)
Base Station PA driver
Repeater
CDMA
GSM / EDGE
1dB
Units
ºC/W
MHz
Deg
dBc
dB
dB
dB
nS
W
%
%
Min.
869
60
16
32
-
-
-
-
-
Hours
Volts
Unit
http://www.sirenza.com
EDS-104208 Rev F
Pb
Typ.
0.3
-15
-31
4.0
0.5
1.5
65
17
34
46
-
&
RoHS Compliant
1.2 X 10
Green
Typical
2000
Max.
894
-10
-28
0.5
-
-
-
-
-
-
Package
6

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SDM-08060-B1F Summary of contents

Page 1

... Product Description Sirenza Microdevices’ SDM-08060-B1F 65W power module is a robust, impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high perfor- mance LDMOS process drop-in, no-tune solution for high power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability ...

Page 2

... Caution: ESD Sensitive Appropriate precaution in handling, packaging and testing devices must be observed. 303 S. Technology Court Broomfield, CO 80021 SDM-08060-B1F 869-894 MHz 65W Power Amp Module Description 3.0 to 5.0 VDC. See Notes 2, 3 and 4 GSTH 3.0 to 5.0 VDC. See Notes 2, 3 and 4 GSTH Note 1: Internal RF decoupling is included on all bias leads ...

Page 3

... Frequency (MHz) CW Gain, Efficiency, IRL vs Frequency Vdd=28V, Idq=600mA, Pout=60W 850 860 870 880 Frequency (MHz) 303 S. Technology Court Broomfield, CO 80021 SDM-08060-B1F 869-894 MHz 65W Power Amp Module 45 -10 40 -20 35 -30 30 -40 25 -50 20 -60 15 -70 Efficiency 10 IMD5 -80 5 IRL -90 0 890 ...

Page 4

... Idq=1.6A Idq=1.4A 18 Idq=1.2A Idq=1.0A 17.5 Idq=0. Pout (W) Note: Evaluation test fixture information available on Sirenza Website, referred to as SDM-EVAL. 303 S. Technology Court Broomfield, CO 80021 SDM-08060-B1F 869-894 MHz 65W Power Amp Module 0 70 Efficiency IM3 -10 60 IM7 -20 50 - -50 -60 10 -70 ...

Page 5

... Package Outline Drawing Note: Refer to Application note AN054, “Detailed Installation Instructions for Power Modules” for detailed mounting information. 303 S. Technology Court Broomfield, CO 80021 SDM-08060-B1F 869-894 MHz 65W Power Amp Module Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-104208 Rev F ...

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