SGA-9289 Sirenza Microdevices Inc, SGA-9289 Datasheet

IC AMP HBT SIGE 3GHZ SOT-89

SGA-9289

Manufacturer Part Number
SGA-9289
Description
IC AMP HBT SIGE 3GHZ SOT-89
Manufacturer
Sirenza Microdevices Inc
Datasheet

Specifications of SGA-9289

Current - Supply
250mA ~ 320mA
Frequency
0Hz ~ 3GHz
Gain
11dB ~ 13dB
Noise Figure
2.5dB
P1db
27.5dBm
Package / Case
SOT-89
Rf Type
WLL, WLAN
Test Frequency
1.95GHz
Voltage - Supply
5.5V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
SGA-9289Z
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
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Manufacturer:
RFMD
Quantity:
5 000
Part Number:
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Manufacturer:
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Part Number:
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Manufacturer:
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Quantity:
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Part Number:
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Manufacturer:
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Quantity:
5 000
Product Description
RFMD’s SGA-9289 is a high performance transistor designed for operation to
3GHz. With optimal matching at 2GHz, OIP
RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor
(SiGe HBT) process. The SGA-9289 is cost-effective for applications requiring high
linearity even at moderate biasing levels. It is well suited for operation at both 5V
and 3V. The matte tin finish on the lead-free package utilizes a post annealing pro-
cess to mitigate tin whisker formation and is RoHS compliant per EU Directive
2002/95. This package is also manufactured with green molding compounds that
EDS-101498 Rev H
Maximum Available Gain
Power Gain
Output Power at 1dB Compression
Output Third Order Intercept Point
Noise Figure
DC Current Gain
Breakdown Voltage
Thermal Resistance
Device Operating Voltage
Operating Current
Test Conditions: V
[1] 100% Tested
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Parameter
CE
[2] Sample Tested
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
=5V, I
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
contain no antimony trioxide nor halogenated fire retardants.
CQ
=280mA (unless otherwise noted), T
25
23
21
19
17
15
13
11
9
7
5
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
0.9
SGA-9289(Z)
Medium Power
Discrete SiGe
Transistor
Typical Gmax, OIP3, P1dB @ 5V,270mA
Min.
1.1
16.2
11.0
26.0
40.0
100
250
7.5
1.3
Gmax
3
Specification
=42.5dBm, and P
Frequency (GHz)
1.5
Typ.
20.5
13.1
12.0
28.0
42.0
42.5
17.7
27.5
180
280
2.4
2.5
8.5
32
1.7
P1dB
L
=25°C.
1.9
OIP3
MEDIUM POWER DISCRETE SiGe TRANSISTOR
Max.
2.1
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
19.2
13.0
300
320
5.5
1dB
=27.5dBm. This
2.3
2.5
°C/W
Unit
dBm
dBm
dBm
dBm
44
42
40
38
36
34
32
30
28
26
24
mA
dB
dB
dB
dB
dB
dB
V
V
900MHz, Z
1960MHz
900MHz [1], Z
1960MHz [2]
900MHz, Z
1960MHz [2]
900MHz, Z
1960MHz [2]
900MHz, Z
1960MHz
collector - emitter
junction - lead
collector - emitter
Features
Applications
tone
Available in RoHS Compliant and
Green Packaging
50MHz to 3000MHz Operation
42.5dBm Output IP
1.96GHz
12.0dB Gain Typ. at 1.96GHz
27.5dBm P
2.4dB NF Typ. at 0.9GHz
Cost-Effective
3V to 5V Operation
Wireless Infrastructure Driver
Amplifiers
CATV Amplifiers
Wireless Data, WLL Amplifiers
AN-022 Contains Detailed Appli-
cation Circuits
SGA-9289(Z)
S
S
S
S
=Z
=Z
=Z
=Z
S
S
SOPT
SOPT
SOPT
=Z
*, Z
SOPT
Condition
, Z
, Z
, Z
L
=Z
1dB
L
L
L
, Z
=Z
=Z
=Z
L
*
L
LOPT
LOPT,
LOPT
=Z
Typ. at 1.96GHz
Package: SOT-89
LOPT
P
OUT
3
Typ. at
=+13dBm per
1 of 6

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SGA-9289 Summary of contents

Page 1

... With optimal matching at 2GHz, OIP RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9289 is cost-effective for applications requiring high linearity even at moderate biasing levels well suited for operation at both 5V and 3V. The matte tin finish on the lead-free package utilizes a post annealing pro- cess to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95 ...

Page 2

... SGA-9289(Z) Absolute Maximum Ratings Parameter Max Base Current ( Max Device Current ( Max Collector-Emitter Voltage (V ) CEO Max Collector-Base Voltage (V ) CBO Max Emitter-Base Voltage (V ) EBO Max Junction Temp ( Operating Temp Range ( Max Storage Temp *Note: Load condition1, Z =50Ω. L Operation of this device beyond any one of these limits may cause permanent dam- age ...

Page 3

... The data represents typical performace of the device DC-IV Curves 700 600 500 400 300 200 100 (V) CE SGA-9289(Z) Insertion Gain vs Temperature T = -40, 25, 85° Frequency (GHz) S22 vs Frequency 1.0 0.5 2.0 5 GHz 8 GHz 4 GHz 5.0 3 GHz 2 GHz 1 GHz 0 ...

Page 4

... SGA-9289(Z) Pin Function Description 1 Base RF input. 2 Emitter Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. 3 Collector RF output. 4 Emitter Same as pin 2. Recommended Mounting Configuration for Optimum RF and Thermal Plated Thru Holes (0.020" DIA) Machine Screws Mounting and Thermal Considerations It is very important that adequate heat sinking be provided to minimize the device junction temperature ...

Page 5

... Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. EDS-101498 Rev H Package Drawing Dimensions in inches (millimeters) .161 .016 .177 .068 .019 .096 .041 .015 .059 Part Symbolization Ordering Information Reel Size Devices/Reel 13” 3000 13” 3000 SGA-9289(Z) .118 ...

Page 6

... SGA-9289(Z) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com EDS-101498 Rev H ...

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