MW4IC2020MBR5 Freescale Semiconductor, MW4IC2020MBR5 Datasheet

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MW4IC2020MBR5

Manufacturer Part Number
MW4IC2020MBR5
Description
IC PWR AMP RF 26V 20W TO-272-16
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MW4IC2020MBR5

Current - Supply
80mA
Frequency
1.6GHz ~ 2.4GHz
Gain
29dB
Package / Case
TO-272-16
Rf Type
Cellular, GSM, EDGE, CDMA
Voltage - Supply
26V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
P1db
-
Test Frequency
-
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
matching that makes it usable from 1600 to 2400 MHz. This multi - stage
structure is rated for 26 to 28 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
• Typical Two - Tone Performance: V
Driver Applications
• Typical GSM EDGE Performance: V
• Typical CDMA Performance: V
• Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 8 W CW
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Temperature Compensation with Enable/Disable Function
• On - Chip Current Mirror g
• Integrated ESD Protection
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
The MW4IC2020 wideband integrated circuit is designed with on - chip
200 mA, I
230 mA, I
240 mA, I
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Band-
width = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Output Power
P
Select Documentation/Application Notes - AN1987.
out
Power Gain — 29 dB
IMD — - 32 dBc
Drain Efficiency — 26% (at 1805 MHz) and 20% (at 1990 MHz)
Power Gain — 29 dB
Spectral Regrowth @ 400 kHz Offset = - 66 dBc
Spectral Regrowth @ 600 kHz Offset = - 77 dBc
EVM — 1% rms
Power Gain — 30 dB
ACPR @ 885 kHz Offset = - 61 dBc in 30 kHz Bandwidth
ALT1 @ 1.25 MHz Offset = - 69 dBc in 12.5 kHz Bandwidth
ALT2 @ 2.25 MHz Offset = - 59 dBc in 1 MHz Bandwidth
.
V
V
V
V
V
V
V
RF
RG1
RD1
DS2
DS1
GS1
GS2
GS3
in
DQ3
DQ3
DQ3
= 300 mA, P
= 230 mA, P
= 250 mA, P
Figure 1. Functional Block Diagram
Replaced by MW4IC2020NBR1(GNBR1). There are no form, fit or function changes with this
part replacement. N suffix added to part number to indicate transition to lead - free terminations.
m
out
out
out
Reference FET for Self Biasing Application
Temperature Compensation
= 20 Watts PEP, Full Frequency Band
= 5 Watts Avg., Full Frequency Band
= 1 Watt Avg., Full Frequency Band, IS - 95
DD
Quiescent Current
= 26 Volts, I
DD
DD
= 26 Volts, I
= 26 Volts, I
3 Stages I
DQ1
C
DQ1
= 80 mA, I
DQ1
= 80 mA, I
= 80 mA, I
DQ2
DQ2
=
DQ2
V
=
DS3
=
(1)
/RF
out
INTEGRATED POWER AMPLIFIERS
MW4IC2020MBR1 MW4IC2020GMBR1
MW4IC2020GMBR1
Note: Exposed backside flag is source
Document Number: MW4IC2020
MW4IC2020MBR1
1805- 1990 MHz, 20 W, 26 V
Figure 2. Pin Connections
V
V
V
GND
V
V
V
V
GND
GSM/GSM EDGE, CDMA
RF
RF LDMOS WIDEBAND
TO - 272 WB - 16 GULL
GS1
GS2
GS3
DS2
RD1
RG1
DS1
MW4IC2020GMBR1
in
terminal for transistors.
CASE 1329A - 03
PLASTIC
MW4IC2020MBR1
10
11
1
2
3
4
5
6
7
8
9
TO - 272 WB - 16
(Top View)
CASE 1329 - 09
PLASTIC
16
15
14
13
12
Rev. 8, 5/2006
GND
V
RF
GND
DS3/
out
1

Related parts for MW4IC2020MBR5

MW4IC2020MBR5 Summary of contents

Page 1

... V GS2 Temperature Compensation V GS3 Figure 1. Functional Block Diagram 1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor = 26 Volts mA DQ1 DQ2 = 26 Volts, I ...

Page 2

... I = 300 mA, DQ2 DQ3 — 33 — — — ±5 — 0.15 — — — ±0.5 ±0.2 — 1.8 — — ±10 — (continued) RF Device Data Freescale Semiconductor Unit Vdc Vdc °C °C dBm Unit Unit °C Unit dBc ° ns ° ...

Page 3

... I = 230 mA 230 mA Avg., 1805 MHz<Frequency<1990 MHz DQ2 DQ3 out Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset RF Device Data Freescale Semiconductor (continued) = 25°C unless otherwise noted) C Symbol = 26 Vdc η D ACPR ALT1 ALT2 ...

Page 4

... Chip Capacitor 10 pF 100B Chip Capacitor 1.8 kW Chip Resistors (1206 OUTPUT C10 C11 C12 C13 C14 = 2.55 r Part Number Manufacturer TAJE226M035 AVX 12065C224K28 AVX 100B6R8CW ATC 100B0R5BW ATC 100B1R8BW ATC 100B2R2BW ATC 100B1R0BW ATC 100B0R3BW ATC 100B100GW ATC RF Device Data Freescale Semiconductor RF ...

Page 5

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MW4IC2020MBR1(GMBR1) Test Circuit Component Layout ...

Page 6

... Order OUTPUT POWER (WATTS) PEP out versus Output Power @ 1960 MHz G ps 25_C −30_C 25_C η D 85_C 85_C Vdc DQ1 I = 240 mA 250 mA DQ2 DQ3 f = 1960 MHz, 1−Carrier N−CDMA OUTPUT POWER (WATTS) AVG. out versus Output Power RF Device Data Freescale Semiconductor 100 ...

Page 7

... SR 400 kHz −70 −75 SR 600 kHz −80 −85 0 OUTPUT POWER (WATTS) AVG. out Figure 14. Spectral Regrowth at 400 and 600 kHz versus Output Power @ 1840 MHz RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 85_C T = 25_C −30_C 30 −30_C 25_C 85_C 28 26 −30_C ...

Page 8

... This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide 2 MTTF factor by I for MTTF in a particular application. D 170 180 190 2 RF Device Data Freescale Semiconductor ...

Page 9

... MHz V DD Figure 17. Series Equivalent Input and Load Impedance RF Device Data Freescale Semiconductor f = 1805 MHz f = 1805 MHz f = 1990 MHz Z Z load Ω mA 200 mA 300 mA, P DQ1 DQ2 DQ3 load MHz Ω 1805 40.00 + j6.50 8.75 - j1.42 1842 40.00 + j2.00 7.00 - j2.70 1880 40 ...

Page 10

... MW4IC2020MBR1 MW4IC2020GMBR1 10 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MW4IC2020MBR1 MW4IC2020GMBR1 11 ...

Page 12

... MW4IC2020MBR1 MW4IC2020GMBR1 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MW4IC2020MBR1 MW4IC2020GMBR1 13 ...

Page 14

... MW4IC2020MBR1 MW4IC2020GMBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MW4IC2020MBR1 MW4IC2020GMBR1 15 ...

Page 16

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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