UPC2763TB-EVAL NEC, UPC2763TB-EVAL Datasheet

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UPC2763TB-EVAL

Manufacturer Part Number
UPC2763TB-EVAL
Description
EVAL BOARD FOR UPC2763TB
Manufacturer
NEC
Type
Amplifier, MMICr
Datasheet

Specifications of UPC2763TB-EVAL

Frequency
2.3GHz ~ 2.7GHz
For Use With/related Products
UPC2763TB
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
ELECTRICAL CHARACTERISTICS
Note:
1. π/4 QPSK modulated wave input, data rate 42 kbps.
FEATURES
• HIGH OUTPUT POWER: P
• LOW VOLTAGE: 3.0 V TYP, 2.7 V MIN
• WIDE BANDWIDTH: 2.7 GHz at -3 dB
• HIGH GAIN: 20 dB at 1.9 GHz
• SUPER SMALL PACKAGE: SOT-363 package
• TAPE AND REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
NEC's UPC2763TB is a Silicon Monolithic integrated circuit
which is manufactured using the NESAT™ III process. The
NESAT™ III process produces transistors with f
20 GHz. The UPC2763TB is pin compatible and has compa-
rable performance to the larger UPC2763T, so it is suitable for
use as a replacement to help reduce system size. The IC is
housed in a 6 pin super minimold or SOT-363 package.
Operating on a 3 volt supply this IC is ideally suited for hand-
held, portable designs.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
SYMBOLS
RL
ISOL
OIP
P
P
P
RL
I
G
NF
CC
f
SAT
1dB
ADJ
U
OUT
S
IN
3
Circuit Current (no signal)
Small Signal Gain,
Upper Limit Operating Frequency
(The gain at fu is 3 dB down from the gain at 0.1 GHz)
Output Power at 1 dB Compression Point, f = 900 MHz
Saturated Output Power, f = 900 MHz
Noise Figure,
Input Return Loss,
Output Return Loss,
Isolation,
SSB Output Third Order Intercept Point
P
Adjacent Channel Power,
f = 900 MHz, π/4 QPSK wave
P
OUT
O
MEDIUM POWER SI MMIC AMPLIFIER
= +4 dBm
= +4 dBm
PARAMETERS AND CONDITIONS
SAT
PACKAGE OUTLINE
PART NUMBER
= +11 dBm at 900 MHz
f = 1900 MHz
f = 900 MHz
f = 1900 MHz
f = 900 MHz
f = 1900 MHz
f = 900 MHz
f = 1900 MHz
f = 900 MHz
f = 1900 MHz
f = 900 MHz
f = 1900 MHz
1
,
f = 900, 902 MHz
f = 1900, 1902 MHz
∆f = ±50 KHz
∆f = ±100 KHz
T
approaching
(T
3 V, SUPER MINIMOLD
A
f = 1900 MHz
= 25°C, Z
L
= Z
S
= 50 Ω, V
UNITS
GHz
dBm
dBm
dBm
dBm
dBm
dBm
dBc
dBc
mA
CC
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
= 3.0 V)
24
20
16
18
12
10
22
14
6
8
0.1
California Eastern Laboratories
T
A
= +25°C
T
A
GAIN vs. FREQUENCY AND
= +85°C
MIN
2.3
18
18
+7
+4
25
24
Frequency, f (MHz)
8
8
5
6
TEMPERATURE
0.3
T
A
= -40°C
T
A
= +25°C
UPC2763TB
UPC2763TB
1.0
+9.5
+6.5
TYP
+17
+11
2.7
5.5
5.5
-61
-62
T
27
20
21
11
11
11
30
29
S06
8
7
9
A
V
T
= +85°C
CC
A
= -40°C
= 3.0 V
3.0
MAX
7.0
7.5
35
23
24

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UPC2763TB-EVAL Summary of contents

Page 1

... NESAT™ III process. The NESAT™ III process produces transistors with f 20 GHz. The UPC2763TB is pin compatible and has compa- rable performance to the larger UPC2763T suitable for use as a replacement to help reduce system size. The IC is housed pin super minimold or SOT-363 package ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS UNITS V Supply Voltage CC I Total Supply Current CC P Input Power Total Power Dissipation T T Operating Temperature OP T Storage Temperature STG Notes: 1. Operation in excess of any ...

Page 3

TYPICAL PERFORMANCE CURVES ISOLATION vs. FREQUENCY 0 -10 -20 -30 -40 -50 0.1 0.3 Frequency, f (GHz) OUTPUT POWER vs. INPUT POWER AND TEMPERATURE 0 +85° 3 ...

Page 4

... UPC2763TB TYPICAL PERFORMANCE CURVES SATURATED OUTPUT POWER vs. FREQUENCYAND TEMPERATURE +15 +13 + -40° +25° 0.1 0.3 1.0 Frequency, f (GHz) THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE AND VOLTAGE - - 3 - -20 -10 0 -15 - Output Power of Each Tone 25°C) A THIRD ORDER INTERMODULATION DISTORTION vs. ...

Page 5

TYPICAL SCATTERING PARAMETERS 0.1 GHz 1.0 GHz 3.0 GHz 2.0 GHz S11 3 OUT CC FREQUENCY S 11 GHz MAG ANG 0.1 0.231 -1.4 0.2 0.242 -0.2 0.3 0.250 2.7 ...

Page 6

... GND 3 5 ORDERING INFORMATION PART NUMBER UPC2763TB-E3-A Note: Embossed Tape wide. Pins 1, 2 and 3 face perforated side of tape. Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury ...

Page 7

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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