UPC8179TB-EV24 NEC, UPC8179TB-EV24 Datasheet

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UPC8179TB-EV24

Manufacturer Part Number
UPC8179TB-EV24
Description
EVAL BOARD FOR UPC8179TB 2.4GHZ
Manufacturer
NEC
Type
Amplifierr
Datasheet

Specifications of UPC8179TB-EV24

Frequency
100MHz ~ 2.4GHz
For Use With/related Products
UPC8179TB@2.4GHz
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
• HIGH DENSITY SURFACE MOUNTING:
• SUPPLY VOLTAGE:
• HIGH EFFICIENCY:
• POWER GAIN:
• EXCELLENT ISOLATION:
• LOW CURRENT CONSUMPTION:
• OPERATING FREQUENCY:
• LIGHT WEIGHT:
APPLICATIOIN
• Buffer amplifiers for 0.1 to 2.4 GHz mobile communications
FEATURES
ELECTRICAL CHARACTERISTICS,
(Unless otherwise specified, T
SYMBOLS
systems.
6 Pin Super Minimold Package (2.0 x 1.25 x 0.9 mm)
V
P
P
P
G
G
G
ISL = 44 dB TYP at f = 1.0 GHz
ISL = 42 dB TYP at f = 1.9 GHz
ISL = 41 dB TYP at f = 2.4 GHz
I
I
7 mg (standard Value)
CC
CC
ISOL
RL
P
CC
O
O
O
P
P
P
GP
I
NF
CC
1dB
(1dB) = +3.0 dBm TYP at f = 1.0 GHz
(1dB) = +1.5 dBm TYP at f = 1.9 GHz
(1dB) = +1.0 dBm TYP at f = 2.4 GHz
= 13.5 dB TYP at f = 1.0 GHz
= 15.5 dB TYP at f = 1.9 GHz
= 15.5 dB TYP at f = 2.4 GHz
= 4.0 mA TYP AT VCC = 3.0 V
= 4.0 mA TYP AT VCC = 3.0 V
IN
= 2.4 to 3.3 V
Circuit Current (no input signal)
Power Gain,
Isolation,
Output Power at
1 dB gain
compression,
Noise Figure,
Input Return Loss,
(without matching
circuit)
PARAMETERS AND CONDITIONS
FOR MOBILE COMMUNICATIONS
A
= +25°C, V
PACKAGE OUTLINE
f = 1.0 GHz, P
f = 1.9 GHz, P
f = 2.4 GHz, P
f = 1.0 GHz, P
f = 1.9 GHz, P
f = 2.4 GHz, P
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.0 GHz, P
f = 1.9 GHz, P
f = 2.4 GHz, P
PART NUMBER
CC
IN
IN
IN
IN
IN
IN
IN
IN
IN
= V
= -30 dBm
= -30 dBm
= -30 dBm
= -30 dBm
= -30 dBm
= -30 dBm
= -30 dBm
= -30 dBm
= -30 dBm
OUT
CURRENT AMPLIFIER
= 3.0 V, Z
SILICON RFIC LOW
S
= Z
DESCRIPTION
NEC's UPC8179TB is a silicon monolithic integrated circuit
designed as amplifier for mobile communications. This IC can
realize low current consumption with external chip inductor
which can be realized on internal 50Ω wideband matched IC.
This low current amplifier uns on 3.0 V. This IC is manufactured
using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process)
silicon bipolar process. This process uses direct silicon nitride
passivation film and gold electrodes. These materials can
protect the chip surface from pollution and prevent corrosion/
migration. Thus this IC has exellent performance uniformity
and reliability.
L
= 50Ω, at LC matched Frequency)
UNITS
mA
dB
dB
dB
dB
dB
+20
+10
–10
–20
–30
–40
California Eastern Laboratories
0
0.1
Output match for best performance
at each frequency
POWER GAIN vs. FREQUENCY
V
CC
T
T
T
A
A
A
= 3.0 V
= -40°C
= +25°C
= +85°C
11.0
13.0
13.0
39.0
37.0
36.0
MIN
-2.0
-0.5
-3.0
2.9
4.0
4.0
6.0
1.0 GHz
0.3
UPC8179TB
UPC8179TB
1.0
1.9 GHz
TYP
13.5
15.5
15.5
44.0
42.0
41.0
S06
4.0
3.0
1.5
1.0
5.0
5.0
5.0
7.0
7.0
9.0
2.4 GHz
3.0
MAX
15.5
17.5
17.5
5.4
6.5
6.5
6.5

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UPC8179TB-EV24 Summary of contents

Page 1

... GHz, P SILICON RFIC LOW CURRENT AMPLIFIER DESCRIPTION NEC's UPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can be realized on internal 50Ω wideband matched IC. This low current amplifier uns on 3.0 V. This IC is manufactured using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process) silicon bipolar process ...

Page 2

... This pin must be coupled to signal source with capacitor for DC cut. Ground pin. This pin should be connected to the system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference ...

Page 3

TYPICAL PERFORMANCE CURVES GAIN vs. FREQUENCY +20 Vcc = 3 +25 ºC –10 –20 –30 –40 0.1 0.3 Frequency, f (GHz) INPUT RETURN LOSS vs. FREQUENCY 0 –5 – +25 ºC A –15 ...

Page 4

TYPICAL PERFORMANCE CURVES NOISE FIGURE vs. VOLTAGE 6 +85 ºC A 5.5 5 +25 ºC A 4.5 4 –40 ºC A 3.5 3.0 2.0 2.5 Voltage GAIN vs. FREQUENCY +20 Vcc = ...

Page 5

TYPICAL PERFORMANCE CURVES OUTPUT POWER vs. INPUT POWER + –40º +25ºC A –5 – +85ºC A –15 –20 –25 –30 –40 –35 –30 –25 –20 –15 –10 Input Power, P NOISE ...

Page 6

TYPICAL PERFORMANCE CURVES INPUT RETURN LOSS vs. FREQUENCY 0 –5 – +25ºC A –15 –20 – 3 –30 0.1 0.3 1.0 Frequency, f (GHz) OUTPUT POWER vs. INPUT POWER + 3.0 V ...

Page 7

... UPC8179TB TYPICAL SCATTERING PARAMETERS 1.0 G 3.0 G 2.0 G S11 3 4 OUT CC FREQUENCY S 11 GHz MAG ANG MAG 0.1 0.824 -17.1 1.181 0.2 0.692 -25.9 1.181 0.3 0.594 -29.2 1.247 0.4 0.533 -30.7 1.370 0.5 0.499 -31.1 1.514 0.6 0.474 -32.0 1.677 0.7 ...

Page 8

... ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD COMPONENT LIST 1.0 GHz Output Port Matching C 1000 0. COMPONENT LIST 1.9GHz Output Port Matching 1000 0. 3 COMPONENT LIST 2.4 GHz Output Port Matching 1000 1 2 AMP-4 IN Top View C 1 Mounting Direction AMP AMP UPC8179TB OUT OUT OUT ...

Page 9

TEST CIRCUITS <1> 1.0 GHz <2> 1.9 GHz <3> 2.4 GHz Vcc Ω Vcc ...

Page 10

... LEAD CONNECTIONS +0.1 0 INPUT 2. GND DOT ON BOTTOM SIDE 3. GND 4. OUTPUT 5. GND +0.1 0.15 -0.5 ORDERING INFORMATION (Units in mm) PART NUMBER UPC8179TB-E3-A Note: Embossed tape wide. Pins are in tape pull-out direction. 5-10 I DEMOD Q PLL I Q (Top View) (Bottom View QTY 3K/Reel Internet: http://WWW ...

Page 11

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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