SI4735-B20-GM Silicon Laboratories Inc, SI4735-B20-GM Datasheet - Page 13

IC RX AM/FM/SW/LW RAD RDS 20UQFN

SI4735-B20-GM

Manufacturer Part Number
SI4735-B20-GM
Description
IC RX AM/FM/SW/LW RAD RDS 20UQFN
Manufacturer
Silicon Laboratories Inc
Datasheet

Specifications of SI4735-B20-GM

Package / Case
20-UQFN, 20-µQFN
Frequency
153kHz ~ 279kHz, 520kHz ~ 1.71MHz, 2.3MHz ~ 21.85MHz, 64MHz ~ 108MHz
Modulation Or Protocol
AM, FM, LW-SW, WB
Applications
General Purpose
Current - Receiving
19.9mA
Data Interface
PCB, Surface Mount
Antenna Connector
PCB, Surface Mount
Features
RSSI Equipped
Voltage - Supply
2.7 V ~ 5.5 V
Operating Temperature
-20°C ~ 85°C
Bus Type
I2C
Maximum Frequency
108 MHz, 1710 MHz
Minimum Frequency
76 MHz, 520 MHz
Modulation Technique
AM, FM
Mounting Style
SMD/SMT
Function
Radio
Supply Voltage (min)
2.7 V
Supply Voltage (max)
5.5 V
Minimum Operating Temperature
- 20 C
Maximum Operating Temperature
+ 85 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Sensitivity
-
Memory Size
-
Data Rate - Maximum
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4735-B20-GM
Manufacturer:
SiliconL
Quantity:
85
Part Number:
SI4735-B20-GMR
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
Table 8. AM/SW/LW Receiver Characteristics
(V
Input Frequency
Sensitivity
Large Signal Voltage Handling
Power Supply Rejection Ratio
Audio Output Voltage
Audio S/N
Audio THD
Antenna Inductance
Powerup Time
Notes:
DD
1. To ensure proper operation and receiver performance, follow the guidelines in “AN383: Si47xx Antenna, Schematic,
2. FMOD = 1 kHz, 30% modulation, A-weighted, 2 kHz channel filter.
3. B
4. f
5. Guaranteed by characterization.
6. Analog audio output mode.
7. See “AN388: Si470X/1X/2X/3X/4X Evaluation Board Test Procedure” for evaluation method.
8. V
9. Stray capacitance on antenna and board must be < 10 pF to achieve full tuning range at higher inductance levels.
= 2.7 to 5.5 V, V
Layout and Design Guidelines.” Silicon Laboratories will evaluate schematics and layouts for qualified customers.
RF
AF
IN
= 1000 kHz, f = 10 kHz.
= 5 mVrms.
2,3,4,5, 6
2,3,4,6,8
= 300 Hz to 15 kHz, A-weighted.
Parameter
2,4,8
IO
= 1.5 to 3.6 V, TA = –20 to 85 °C)
2,8
5,7
Symbol
f
RF
ΔV
DD
Medium Wave (AM)
Medium Wave (AM)
Short Wave (SW)
From powerdown
Long Wave (LW)
(S+N)/N = 26 dB
Long Wave (LW)
1
Test Condition
= 100 mV
Rev. 0.5
THD < 8%
RMS
, 100 Hz
Min
153
520
180
2.3
54
50
2800
Typ
300
0.1
25
40
60
56
Si473x-B20
21.85
1710
Max
279
450
110
0.5
35
67
µV EMF
mV
mV
Unit
MHz
kHz
kHz
µH
ms
dB
dB
%
RMS
RMS
13

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