ATA5773-PXQW Atmel, ATA5773-PXQW Datasheet - Page 175

• Manufacturer Part Number: ATA5773-PXQW
• Description: XMITTR UHF ASK/FSK 310MHZ 24VQFN
• Manufacturer: Atmel

Specifications of ATA5773-PXQW

• Frequency: 310MHz ~ 350MHz
• Modulation Or Protocol: UHF
• Power - Output: 8dBm
• Voltage - Supply: 2 V ~ 4 V
• Current - Transmitting: 9.8mA
• Data Interface: PCB, Surface Mount
• Memory Size: 4kB Flash, 256B EEPROM, 256B SRAM
• Antenna Connector: PCB, Surface Mount
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 24-VQFN Exposed Pad, 24-HVQFN, 24-SQFN, 24-DHVQFN
• Processor Series: ATA5x
• Core: AVR8
• Data Bus Width: 8 bit
• Program Memory Type: Flash
• Program Memory Size: 4 KB
• Data Ram Size: 256 B
• Interface Type: SPI, USI
• Maximum Clock Frequency: 4 MHz
• Number Of Programmable I/os: 12
• Number Of Timers: 2
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 12 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Applications: -
• Sensitivity: -
• Data Rate - Maximum: -
• Current - Receiving: -
• Lead Free Status / Rohs Status: Details

4.23.8
4.23.8.1
4.23.8.2
4.23.8.3
9137E–RKE–12/10
High-voltage Serial Programming Algorithm
Enter High-voltage Serial Programming Mode
Considerations for Efficient Programming
Chip Erase
To program and verify the Atmel
the following sequence is recommended (See instruction formats in
The following algorithm puts the device in High-voltage Serial Programming mode:
1. Apply 4.5 - 5.5V between V
2. Set RESET pin to “0” and toggle SCI at least six times.
3. Set the Prog_enable pins listed in
4. Apply V
5. Shortly after latching the Prog_enable signature, the device will activly output data on
6. Wait at least 50 µs before giving any serial instructions on SDI/SII.
Table 4-69.
The loaded command and address are retained in the device during programming. For effi-
cient programming, the following should be considered.
• The command needs only be loaded once when writing or reading multiple memory
• Skip writing the data value 0xFF that is the contents of the entire EEPROM (unless the
• Address High byte needs only be loaded before programming or reading a new 256 word
The Chip Erase will erase the Flash and EEPROM
are not reset until the Program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
re-programmed.
Note:
1. Load command “Chip Erase” (see
2. Wait after Instr. 3 until SDO goes high for the “Chip Erase” cycle to finish.
3. Load Command “No Operation”.
Supply Voltage
V
4.5V
5.5V
locations.
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
CC
100 ns.
t
has been latched.
the Prog_enable[2]/SDO pin, and the resulting drive contention may increase the
power consumption. To minimize this drive contention, release the Prog_enable[2] pin
after t
HVRST
1. The EEPROM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
HVRST
after the High-voltage has been applied to ensure the Prog_enable signature
HVRST
High-voltage Reset Characteristics
has elapsed.
- 5.5V to RESET. Keep the Prog_enable pins unchanged for at least
RESET Pin High-voltage Threshold
CC
®
and GND.
ATtiny44V in the High-voltage Serial Programming mode,
V
11.5V
11.5V
HVRST
Table 4-68 on page 174
Table 4-70 on page
(1)
Atmel ATA5771/73/74
memories plus Lock bits. The Lock bits
178).
Minimum High-voltage Period for
to “000” and wait at least
Latching Prog_enable
Table 4-70 on page
100 ns
100 ns
t
HVRST
178):
175