VUO62-08NO7

Manufacturer Part NumberVUO62-08NO7
DescriptionRECT BRIDGE 3PH 63A 800V PWS-D
ManufacturerIXYS
VUO62-08NO7 datasheet
 

Specifications of VUO62-08NO7

Voltage - Peak Reverse (max)800VCurrent - Dc Forward (if)63A
Diode TypeThree PhaseSpeedStandard Recovery >500ns, > 200mA (Io)
Mounting TypeChassis MountPackage / CasePWS-D
Phase TypeThree PhaseNumber Of Elements1
Peak Rep Rev Volt800VPeak Non-repetitive Surge Current (max)600A
Avg. Forward Curr (max)63ARev Curr300uA
Forward Voltage1.8VOperating Temp Range-40C to 150C
Pin Count5MountingScrew
Operating Temperature ClassificationAutomotiveVrrm, (v)800
Vrsm, (v)900Idavm, (a)63
@ Th, (°c)-@ Tc, (°c)110
Ifsm, 10 Ms, Tvj = 45°c, (a)550Vt0, (v)0.80
Rt, (mohms)8.0Tvjm, (°c)150
Rthjc, Per Chip, (k/w)1.45Rthjh, Per Chip, (k/w)1.87
Package StylePWS-DLead Free Status / RoHS StatusLead free / RoHS Compliant
Reverse Recovery Time (trr)-  
1
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Three Phase
Rectifier Bridge
V
V
Type
RRM
RSM
V
V
800
900
VUO 62-08NO7
1200
1300
VUO 62-12NO7
1400
1500
VUO 62-14NO7
1600
1700
VUO 62-16NO7
1800
1900
VUO 62-18NO7* VUO 82-18NO7*
*
delivery time on request
Symbol
Conditions
I
T
= 110°C; module
dAV
C
I
T
= 45°C (R
= 0.6 K/W); module
dAV
A
thCA
I
T
= 45°C;
t = 10 ms (50 Hz); sine
FSM
VJ
V
= 0 V;
t = 8.3 ms (60 Hz); sine
R
T
= T
;
t = 10 ms (50 Hz); sine
VJ
VJM
V
= 0 V;
t = 8.3 ms (60 Hz); sine
R
I
2
t
T
= 45°C;
t = 10 ms (50 Hz), sine
VJ
V
= 0 V;
t = 8.3 ms (60 Hz), sine
R
T
= T
;
t = 10 ms (50 Hz), sine
VJ
VJM
V
= 0 V;
t = 8.3 ms (60 Hz), sine
R
T
VJ
T
VJM
T
stg
V
50/60Hz RMS;
t = 1 min
ISOL
≤ 1 mA;
I
t = 1 s
ISOL
M
Mounting torque (M5)
d
Terminal connection torque (M5)
Weight
typ.
Symbol
Conditions
I
V
= V
;
T
= 25°C
R
R
RRM
VJ
V
= V
;
T
= T
R
RRM
VJ
VJM
V
I
= 150 A; T
= 25°C
F
F
VJ
V
For power-loss calculations only
T0
r
T
R
per diode
thJC
per module
R
per diode
thJH
per module
d
Creeping distance on surface
S
d
Creepage distance in air
A
a
Max. allowable acceleration
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
+
~
VUO 82-08NO7
~
~
VUO 82-12NO7
VUO 82-14NO7
VUO 82-16NO7
Maximum Ratings
VUO 62
VUO 82
63
88
48
57
550
750
600
820
500
670
550
740
1520
2800
1520
2800
1250
2250
1250
2250
-40...+150
150
-40...+125
2500
3000
±15%
5
±15%
5
160
Characteristic Values
VUO 62
VUO 82
< 0.3
0.3
<
5
< 1.8
1.6
0.8
0.8
8
1.45
1.1
0.24
0.183
1.87
1.52
0.31
0.253
10
9.4
50
I
= 63/88 A
dAV
V
= 800-1800 V
RRM
~
~ ~
+
Features
Package with screw terminals
A
Isolation voltage 3000 V~
A
Planar passivated chips
Blocking voltage up to 1800 V
A
Low forward voltage drop
A
UL registered E72873
A
A
Applications
Supplies for DC power equipment
A
2
s
Input rectifiers for PWM inverter
A
2
s
Battery DC power supplies
2
A
s
Field supply for DC motors
A
2
s
Advantages
°C
°C
Easy to mount with two screws
°C
Space and weight savings
Improved temperature and power cycling
V~
V~
Nm
Dimensions in mm (1 mm = 0.0394")
Nm
g
mA
5
mA
V
72
60
54
20
V
20
2.5
18
5
K/W
K/W
~
~
K/W
+
K/W
mm
mm
23
m/s
2
48
VUO 62
VUO 82
-
M5x10
2.5
~
10
20080811a
1 - 3

VUO62-08NO7 Summary of contents

  • Page 1

    ... Creeping distance on surface S d Creepage distance in air A a Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved + ~ VUO 82-08NO7 ~ ~ VUO 82-12NO7 ...

  • Page 2

    ... Fig. 4 Power dissipation versus direct output current and ambient temperature 2.5 K/W 2 1 0.01 0.1 t[s] Fig. 6 Transient thermal impedance per diode or thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved I F(OV) ------ I FSM I (A) FSM TVJ=45°C TVJ=150°C 1.6 ...

  • Page 3

    ... K/W 1 0.01 0.1 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 2 Fig. 2 Surge overload current per diode I : Crest value FSM t: duration Z thJK Z thJC ...