VUO62-16NO7 IXYS, VUO62-16NO7 Datasheet - Page 2

• Manufacturer Part Number: VUO62-16NO7
• Description: RECT BRIDGE 3PH 63A 1600V PWS-D
• Manufacturer: IXYS

Specifications of VUO62-16NO7

• Voltage - Peak Reverse (max): 1600V
• Current - Dc Forward (if): 63A
• Diode Type: Three Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Chassis Mount
• Package / Case: PWS-D
• Phase Type: Three Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 1.6kV
• Peak Non-repetitive Surge Current (max): 600A
• Avg. Forward Curr (max): 63A
• Rev Curr: 300uA
• Forward Voltage: 1.8V
• Operating Temp Range: -40C to 150C
• Pin Count: 5
• Mounting: Screw
• Operating Temperature Classification: Automotive
• Vrrm, (v): 1600
• Vrsm, (v): 1700
• Idavm, (a): 63
• @ Th, (°c): -
• @ Tc, (°c): 110
• Ifsm, 10 Ms, Tvj = 45°c, (a): 550
• Vt0, (v): 0.80
• Rt, (mohms): 8.0
• Tvjm, (°c): 150
• Rthjc, Per Chip, (k/w): 1.45
• Rthjh, Per Chip, (k/w): 1.87
• Package Style: PWS-D
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant

Fig. 1 Forward current versus
Fig. 4 Power dissipation versus direct output current and ambient temperature
2.5
1.5
0.5
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
© 2008 IXYS All rights reserved
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
[A]
PVTOT
200
150
100
Z th
I
50
F
0
[W]
2
1
200
175
150
125
100
75
50
25
T
0
vj
voltage drop per diode
= 150°C
PSD 62
0.5
IFAVM
0.01
20
V F [V]
1
T
vj
= 25°C
40
1.5
sin.180°
rec.120°
rec.60°
rec.30°
0.1
DC
2
60
t[s]
[A]
0
1
0.51
0.76
1.26
2.76
Tamb
0.38 0.26
Fig. 2 Surge overload current per diode
I
------
I FSM
F(OV)
1.6
1.4
1.2
0.8
0.6
0.4
50
10
1
0
I
FSM
10
Z thJK
Z thJC
= RTHCA [K/W]
: Crest value. t: duration
100
TVJ=45°C
10
1/2 V RRM
1
0 V RRM
1 V RRM
t[ms]
[K]
550
I
FSM
150
10
TVJ=150°C
TC
105
110
115
120
125
130
135
140
145
°C
150
(A)
2
500
10
3
Fig. 3 ∫i
Fig.5 Maximum forward current
10
10
10
I dAV
As 2
[A]
80
60
40
20
4
3
2
1
0
per diode or thyristor
at case temperature
2
dt versus time (1-10ms)
TVJ=45°C
50
2
t [ms]
T (°C)
C
100
4
TVJ=150°C
VUO 62
sin.180°
rec.120°
rec.60°
rec.30°
150
DC
6
200
10
20080811a
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