DSEI2X61-06C IXYS, DSEI2X61-06C Datasheet

DIODE FRED 600V 2X60A SOT-227

DSEI2X61-06C

Manufacturer Part Number
DSEI2X61-06C
Description
DIODE FRED 600V 2X60A SOT-227
Manufacturer
IXYS
Datasheet

Specifications of DSEI2X61-06C

Voltage - Forward (vf) (max) @ If
1.8V @ 60A
Current - Reverse Leakage @ Vr
200µA @ 600V
Current - Average Rectified (io) (per Diode)
60A
Voltage - Dc Reverse (vr) (max)
600V
Reverse Recovery Time (trr)
50ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
2 Independent
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vrrm, (v)
600
Ifavm, D = 0.5, Total, (a)
120
Ifavm, D = 0.5, Per Diode, (a)
60
@ Tc, (°c)
70
Ifrms, (a)
100
Ifsm, 10 Ms, Tvj=45°c, (a)
550
Vf, Max, Tvj =150°c, (v)
1.50
@ If, (a)
60
Trr, Typ, Tvj =25°c, (ns)
35
Irm , Typ, Tvj =100°c, (a)
19
@ -di/dt, (a/µs)
480
Tvjm, (°c)
150
Rthjc, Max, (k/w)
0.70
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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© 2000 IXYS All rights reserved
Fast Recovery
Epitaxial Diode (FRED)
Symbol
I
I
I
I
I
T
T
T
P
V
M
Weight
Symbol
I
V
V
r
R
R
t
I
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
FRMS
FAVM
FRM
FSM
2
R
rr
RM
T
V
440
640
t
VJ
VJM
stg
tot
ISOL
F
T0
thJC
thCK
d
RSM
V
I
FAVM
ÿÿ
rating includes reverse blocking losses at T
V
400
600
RRM
V
T
T
t
T
T
T
T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque (M4)
T
T
T
I
For power-loss calculations only
T
I
V
L £ 0.05 mH; T
Test Conditions
Test Conditions
P
ISOL
F
F
VJ
C
VJ
VJ
VJ
VJ
C
VJ
VJ
VJ
VJ
R
< 10 ms; rep. rating, pulse width limited by T
= 60 A;
= 1 A; -di/dt = 200 A/ms; V
= 70°C; rectangular, d = 0.5
= 25°C
= 350 V;
= T
= 45°C;
= 150°C; t = 10 ms (50 Hz), sine
= 45°C
= 150°C; t = 10 ms (50 Hz), sine
= 25°C
= 25°C
= 125°C
= T
£ 1 mA
VJM
VJM
Type
DSEI 2x 61-04C
DSEI 2x 61-06C
VJ
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
V
V
V
T
T
I
F
VJ
VJ
R
R
R
= 100°C
= 60 A; -di
= V
= 0.8 • V
= 0.8 • V
= 150°C
= 25°C
RRM
F
RRM
RRM
/dt = 480 A/ms
R
VJM
= 30 V; T
, V
R
= 0.8 V
VJ
= 25°C
RRM
Characteristic Values (per diode)
, duty cycle d = 0.5
VJM
Maximum Ratings (per diode)
typ.
0.7
0.05
35
19
-40...+150
-40...+150
DSEI 2x 61
1.5/13
1.5/13
1510
1490
1150
1120
2500
100
800
550
600
480
520
150
180
60
30
max.
1.13
200
100
1.5
1.8
4.7
14
50
21
Nm/lb.in.
Nm/lb.in.
K/W
K/W
mW
A
A
A
A
mA
V~
mA
mA
°C
°C
°C
ns
W
A
A
A
A
A
A
A
g
V
V
V
A
2
2
2
2
s
s
s
s
I
V
t
miniBLOC, SOT-227 B
Features
Applications
Advantages
FAVM
rr
International standard package
miniBLOC (ISOTOP compatible)
Isolation voltage 2500 V~
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
Soft recovery behaviour
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
RRM
RM
E72873
-values
= 2x 60 A
= 400/600 V
= 35 ns
1 - 2

Related parts for DSEI2X61-06C

DSEI2X61-06C Summary of contents

Page 1

... F L £ 0.05 mH 100° rating includes reverse blocking losses at T FAVM Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved DSEI 2x 61 Maximum Ratings (per diode) 100 60 800 VJM ...

Page 2

... Fig. 1 Forward current versus voltage drop. Fig. 4 Dynamic parameters versus junction temperature. Fig. 7 Transient thermal impedance junction to case. © 2000 IXYS All rights reserved Fig. 2 Recovery charge versus -di /dt. F Fig. 5 Recovery time versus -di /dt. F Dimensions miniBLOC SOT-227 B M4 screws (4x) supplied DSEI 2x 61, 400/600 V Fig ...

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