DSEI2X61-12B IXYS, DSEI2X61-12B Datasheet
DSEI2X61-12B
Manufacturer Part Number
DSEI2X61-12B
Description
DIODE ARRAY 1200V 52A SOT227B
Manufacturer
IXYS
Datasheet
1.DSEI2X61-12B.pdf
(2 pages)
Specifications of DSEI2X61-12B
Voltage - Forward (vf) (max) @ If
2.5V @ 60A
Current - Reverse Leakage @ Vr
2.2mA @ 1200V
Current - Average Rectified (io) (per Diode)
52A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Reverse Recovery Time (trr)
60ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
2 Independent
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vrrm, (v)
1200
Ifavm, D = 0.5, Total, (a)
104
Ifavm, D = 0.5, Per Diode, (a)
52
@ Tc, (°c)
50
Ifrms, (a)
100
Ifsm, 10 Ms, Tvj=45°c, (a)
450
Vf, Max, Tvj =150°c, (v)
2.15
@ If, (a)
60
Trr, Typ, Tvj =25°c, (ns)
40
Irm , Typ, Tvj =100°c, (a)
32
@ -di/dt, (a/µs)
480
Tvjm, (°c)
150
Rthjc, Max, (k/w)
0.70
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DSEI2X61-12B544
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DSEI2X61-12B
Manufacturer:
IXYS
Quantity:
26
Company:
Part Number:
DSEI2X61-12B
Manufacturer:
XILINX
Quantity:
101
Part Number:
DSEI2X61-12B
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Part Number:
DSEI2X61-12B
Quantity:
55
© 2000 IXYS All rights reserved
Fast Recovery
Epitaxial Diode (FRED)
Symbol
I
I
I
I
I
T
T
T
P
V
M
Weight
Symbol
I
V
V
r
R
R
t
I
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
1200
FRMS
FAVM
FRM
FSM
2
R
rr
RM
T
V
t
VJ
VJM
stg
tot
ISOL
F
T0
thJC
thCK
d
RSM
V
I
FAVM
ÿÿ
rating includes reverse blocking losses at T
1200
V
RRM
V
T
T
t
T
T
T
T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque (M4)
T
T
T
I
For power-loss calculations only
T
I
V
L £ 0.05 mH; T
Test Conditions
Test Conditions
P
ISOL
F
F
VJ
C
VJ
VJ
VJ
VJ
C
VJ
VJ
VJ
VJ
R
< 10 ms; rep. rating, pulse width limited by T
= 60 A;
= 1 A; -di/dt = 200 A/ms; V
= 50°C; rectangular, d = 0.5
= 25°C
= 540 V;
= T
= 45°C;
= 150°C; t = 10 ms (50 Hz), sine
= 45°C
= 150°C; t = 10 ms (50 Hz), sine
= 25°C
= 25°C
= 125°C
= T
£ 1 mA
VJM
VJM
Type
DSEI 2x 61-12B
VJ
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
V
V
V
T
T
I
F
VJ
VJ
R
R
R
= 100°C
= 60 A; -di
= V
= 0.8 • V
= 0.8 • V
= 150°C
= 25°C
RRM
F
RRM
RRM
/dt = 480 A/ms
R
VJM
= 30 V; T
, V
R
= 0.8 V
VJ
= 25°C
RRM
Characteristic Values (per diode)
, duty cycle d = 0.5
VJM
Maximum Ratings (per diode)
typ.
0.7
0.05
40
32
-40...+150
-40...+150
DSEI 2x 61
1.5/13
1.5/13
1000
1050
2500
100
700
450
500
400
440
800
810
150
180
52
30
max.
2.15
2.50
1.65
2.2
0.5
8.3
14
60
36
Nm/lb.in.
Nm/lb.in.
K/W
K/W
mW
A
A
A
A
mA
mA
mA
V~
°C
°C
°C
ns
W
A
A
A
A
A
A
A
g
V
V
V
A
2
2
2
2
s
s
s
s
I
V
t
miniBLOC, SOT-227 B
Features
Applications
Advantages
FAVM
rr
International standard package
miniBLOC (ISOTOP compatible)
Isolation voltage 2500 V~
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
Soft recovery behaviour
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
RRM
RM
E72873
-values
= 2x 52 A
= 1200 V
= 40 ns
1 - 2
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DSEI2X61-12B Summary of contents
Page 1
... F L £ 0.05 mH 100° rating includes reverse blocking losses at T FAVM Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved DSEI 2x 61 Maximum Ratings (per diode) 100 52 700 VJM ...
Page 2
... Fig. 1 Forward current versus voltage drop. 1.4 1.2 1 0.8 0 0.4 0.2 0 120 °C 160 T J Fig. 4 Dynamic parameters versus junction temperature. Fig. 7 Transient thermal impedance junction to case. © 2000 IXYS All rights reserved 12 T =100°C VJ µ 540V =60A =120A =60A F I =30A max ...