DSEI2X101-12A IXYS, DSEI2X101-12A Datasheet
DSEI2X101-12A
Manufacturer Part Number
DSEI2X101-12A
Description
DIODE 1200V SOT-227
Manufacturer
IXYS
Datasheet
1.DSEI2X101-12A.pdf
(2 pages)
Specifications of DSEI2X101-12A
Voltage - Forward (vf) (max) @ If
1.87V @ 100A
Current - Reverse Leakage @ Vr
3mA @ 1200V
Current - Average Rectified (io) (per Diode)
91A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Reverse Recovery Time (trr)
60ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
2 Independent
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Product
Fast Recovery Rectifier
Configuration
Dual Parallel
Reverse Voltage
1200 V
Forward Voltage Drop
1.87 V at 100 A
Recovery Time
60 ns
Forward Continuous Current
91 A
Max Surge Current
1300 A
Reverse Current Ir
3000 uA
Power Dissipation
250 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Vrrm, (v)
1200
Ifavm, D = 0.5, Total, (a)
182
Ifavm, D = 0.5, Per Diode, (a)
92
@ Tc, (°c)
50
Ifrms, (a)
130
Ifsm, 10 Ms, Tvj=45°c, (a)
1200
Vf, Max, Tvj =150°c, (v)
1.61
@ If, (a)
100
Trr, Typ, Tvj =25°c, (ns)
40
Irm , Typ, Tvj =100°c, (a)
24
@ -di/dt, (a/µs)
200
Tvjm, (°c)
150
Rthjc, Max, (k/w)
0.50
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q1298691
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSEI2X101-12A
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Part Number:
DSEI2X101-12A
Quantity:
55
Symbol
I
I
I
I
I
T
T
T
P
V
M
Weight
Symbol
I
V
V
r
R
R
t
I
© 2000 IXYS All rights reserved
Fast Recovery
Epitaxial Diode (FRED)
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
1200
F(RMS)
F(AV)M
FRM
FSM
2
R
rr
RM
T
V
t
VJ
VJM
stg
tot
ISOL
F
T0
thJC
thCH
d
RSM
V
I
FAVM
rating includes reverse blocking losses at T
1200
V
RRM
V
Test Conditions
T
T
t
T
T
T
T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque (M4)
Test Conditions
T
T
T
I
For power-loss calculations only
I
V
L £ 0.05 mH; T
P
ISOL
F
F
VJ
C
VJ
VJ
VJ
VJ
C
VJ
VJ
VJ
R
< 10 ms; rep. rating, pulse width limited by T
= 100 A;
= 1 A; -di/dt = 400 A/µs; V
= 25°C
= 50°C; rectangular, d = 0.5
= 100 V;
= T
= 45°C;
= 150°C; t = 10 ms (50 Hz), sine
= 45°C
= 150°C; t = 10 ms (50 Hz), sine
= 25°C
= 25°C
= 125°C
£ 1 mA
VJM
Type
DSEI 2x 101-12A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
V
V
V
T
T
I
VJ
F
VJ
VJ
R
R
R
= 75 A; -di
= 100°C
= V
= 0.8 • V
= 0.8 • V
= 150°C
= 25°C
RRM
F
RRM
RRM
/dt = 200 A/µs
R
VJM
= 30 V; T
, V
R
= 0.8 V
VJ
= 25°C
RRM
Characteristic Values (per diode)
, duty cycle d = 0.5
VJM
Maximum Ratings (per diode)
typ.
0.05
DSEI 2x 101
40
24
-40...+150
-40...+150
1.5/13
1.5/13
4100
4000
3300
3200
2500
TBD
130
900
970
810
870
150
250
91
30
max.
1.61
1.87
1.01
1.5
6.1
0.5
15
60
30
3
Nm/lb.in.
Nm/lb.in.
K/W
K/W
m
A
A
A
A
mA
mA
mA
V~
°C
°C
°C
ns
W
A
A
A
A
A
A
A
g
V
V
V
A
2
2
2
2
W
s
s
s
s
V
I
t
miniBLOC, SOT-227 B
Features
FAVM
rr
miniBLOC, SOT-227 B
International standard package
miniBLOC (ISOTOP compatible)
Isolation voltage 2500 V~
matched diodes f. parallel operation
Planar passivated chips
two independent diodes
Very short recovery time
Extremely low switching losses
Low I
Soft recovery behaviour
M4 screws (4x) supplied
RRM
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
RM
E72873
31.50
14.91
30.12
37.80
11.68
12.60
25.15
26.54
24.59
0.780
-values
-0.05
7.80
4.09
4.09
4.09
8.92
0.76
1.98
4.95
3.94
4.72
3.30
= 1200 V
= 2x 91 A
= 40 ns
Min.
Millimeter
31.88
15.11
30.30
38.20
12.22
12.85
25.42
26.90
25.07
0.830
Max.
8.20
4.29
4.29
4.29
9.60
0.84
2.13
5.97
4.42
4.85
4.57
0.1
-0.002
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
0.130
19.81
Min.
Inches
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
0.180
21.08
Max.
1 - 2
008
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DSEI2X101-12A Summary of contents
Page 1
... F L £ 0.05 mH 100° rating includes reverse blocking losses at T FAVM Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved DSEI 2x 101 Maximum Ratings (per diode) 130 91 TBD VJM ...
Page 2
... T VJ Fig. 4 Dynamic parameters versus K/W D=0.7 Z 0.5 thJC 0.3 0.2 0.1 0.1 0.05 Single Pulse 0.05 0.001 0.01 Fig. 7 Transient thermal impedance junction to case at various duty cycles © 2000 IXYS All rights reserved 100° 600V =200A F I =100A 50A F ...