IGBT N-CHAN 150A 600V ISOTOP

 

STGE200NB60S

Manufacturer Part NumberSTGE200NB60S
DescriptionIGBT N-CHAN 150A 600V ISOTOP
ManufacturerSTMicroelectronics
SeriesPowerMESH™
STGE200NB60S datasheets

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Specifications of STGE200NB60S

ConfigurationSingleVoltage - Collector Emitter Breakdown (max)600V
Vce(on) (max) @ Vge, Ic1.6V @ 15V, 100ACurrent - Collector (ic) (max)200A
Current - Collector Cutoff (max)500µAInput Capacitance (cies) @ Vce1.56nF @ 25V
Power - Max600WInputStandard
Ntc ThermistorNoMounting TypeChassis Mount
Package / CaseISOTOPTransistor TypeIGBT
Dc Collector Current200ACollector Emitter Voltage Vces600V
Power Dissipation Pd600WOperating Temperature Range-55°C To +150°C
No. Of Pins4Collector- Emitter Voltage Vceo Max600 V
Collector-emitter Saturation Voltage1.2 VMaximum Gate Emitter Voltage+/- 20 V
Continuous Collector Current At 25 C200 AGate-emitter Leakage Current+/- 100 nA
Power Dissipation600 WMaximum Operating Temperature+ 150 C
Continuous Collector Current Ic Max200 AMinimum Operating Temperature- 55 C
Mounting StyleScrewCollector Emitter Voltage V(br)ceo600V
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
Igbt Type-Other names497-6731-5
STGE200NB60S
show all specifications
STGE200NB60S PDF datasheetSTGE200NB60S PDF datasheet #2
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Electrical characteristics
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
Static
Symbol
Collector-emitter
V
BR(CES)
breakdown voltage
Collector cut-off
I
CES
(V
= 0)
GE
Gate-emitterleakage
I
GES
current (V
V
Gate threshold voltage
GE(th)
Collector-emitter saturation
V
CE(sat)
voltage
g
Forward transconductance V
fs
Table 4.
Dynamic
Symbol
Input capacitance
C
ies
Output capacitance
C
oes
Reverse transfer
C
res
capacitance
Q
Total gate charge
g
Q
Gate-emitter charge
ge
Q
Gate-collector charge
gc
I
Latching current
CL
4/13
Parameter
Test conditions
I
= 250µA, V
C
V
= Max rating, @ 25°C
CE
V
= Max rating, @ 125°C
CE
V
= ±20V, V
GE
= 0)
CE
V
= V
, I
CE
GE
V
= 15V, I
GE
V
= 15V, I
GE
= 15V
CE
,
Parameter
Test conditions
V
= 25V, f = 1MHz, V
CE
V
= 480V, I
CE
V
= 15V
GE
V
= 480V
clamp
Tj = 125°C , R
STGE200NB60S
Min.
Typ.
= 0
600
GE
= 0
CE
= 250µA
3
C
= 100A
1.2
C
=150A,@100°C
1.2
C
I
= 100A
80
C
Min.
Typ. Max.
1560
0
= 0
GE
1100
95
560
= 100A,
C
70
170
300
= 10Ω
G
Max.
Unit
V
500
µA
5
mA
±100
nA
5
V
1.6
V
V
S
Unit
pF
pF
pF
nC
nC
nC
A

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