IGBT 600V 120A 416W SOT227

 

APT100GF60JU2

Manufacturer Part NumberAPT100GF60JU2
DescriptionIGBT 600V 120A 416W SOT227
ManufacturerMicrosemi Power Products Group
APT100GF60JU2 datasheets

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Specifications of APT100GF60JU2

Igbt TypeNPTConfigurationSingle
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.5V @ 15V, 100A
Current - Collector (ic) (max)120ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce12.3nF @ 25VPower - Max416W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseISOTOP
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesAPT100GF60JU2MI
APT100GF60JU2MI
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Download datasheet (431Kb)Embed
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®
ISOTOP
Boost chopper
NPT IGBT
K
G
E
K
E
C
G
ISOTOP
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
C1
Continuous Collector Current
I
C2
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
IF
Maximum Average Forward Current
A V
IF
RMS Forward Current (Square wave, 50% duty)
RMS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT100GF60JU2
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
C
Features
Non Punch Through (NPT) THUNDERBOLT IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 100 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
®
ISOTOP
Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
RoHS Compliant
T
= 25°C
C
T
= 80°C
C
T
= 25°C
C
T
= 25°C
C
Duty cycle=0.5
T
= 80°C
C
www.microsemi.com
V
= 600V
CES
I
= 100A @ Tc = 80°C
C
®
of V
C
CEsat
Max ratings
Unit
600
V
120
A
100
320
±20
V
416
W
30
A
39
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APT100GF60JU2 Summary of contents

  • Page 1

    ... Maximum Power Dissipation D IF Maximum Average Forward Current RMS Forward Current (Square wave, 50% duty) RMS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT100GF60JU2 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • ...

  • Page 2

    ... Turn off Switching Energy off T Turn-on Delay Time d(on) T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off APT100GF60JU2 = 25°C unless otherwise specified j Test Conditions 100µ 25° 600V T = 125°C CE ...

  • Page 3

    ... RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T ,T Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight APT100GF60JU2 Test Conditions Min I = 30A 60A 30A T = 125° ...

  • Page 4

    ... Ic=100A Ic=50A 1 0 -50 -25 DC Collector Current vs Case Temperature 160 140 120 100 100 125 -50 -25 www.microsemi.com APT100GF60JU2 =10V) GE Tc=-55°C Tc=25°C Tc=125° Collector to Emitter Voltage (V) Gate Charge V =120V CE V =300V CE V =480V CE 50 100 150 200 250 300 ...

  • Page 5

    ... Switching Energy Losses vs Gate Resistance 400V Eon, 200A CE Eoff, 200A V = 15V 125°C J Eoff, 100A 8 Eon, 100A Eoff, 50A 4 Eon, 50A Gate Resistance (Ohms) www.microsemi.com APT100GF60JU2 Turn-Off Delay Time vs Collector Current 250 200 V =15V =125°C J 150 V =15V, GE 100 T =25° 400V 5Ω 100 ...

  • Page 6

    ... Single Pulse 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration (Seconds) www.microsemi.com APT100GF60JU2 Minimum Switching Safe Operating Area 350 300 250 200 150 100 200 400 V , Collector to Emitter Voltage (V) CE 0.01 0.1 ...

  • Page 7

    ... Typical Diode Performance Curve APT100GF60JU2 www.microsemi.com ...

  • Page 8

    ... APT100GF60JU2 www.microsemi.com ...

  • Page 9

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT100GF60JU2 W=4.1 (.161) W=4.3 (.169) H=4 ...