APT50GT120JU3

Manufacturer Part NumberAPT50GT120JU3
DescriptionIGBT 1200V 75A 347W SOT227
ManufacturerMicrosemi Power Products Group
SeriesTrench + Field Stop IGBT®
APT50GT120JU3 datasheets

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Specifications of APT50GT120JU3

Igbt TypeTrench and Field StopConfigurationSingle
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic2.1V @ 15V, 50A
Current - Collector (ic) (max)75ACurrent - Collector Cutoff (max)5mA
Input Capacitance (cies) @ Vce3.6nF @ 25VPower - Max347W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseISOTOP
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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®
ISOTOP
Buck chopper
Trench + Field Stop IGBT
C
G
A
A
E
C
G
ISOTOP
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
C1
Continuous Collector Current
I
C2
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
IF
Maximum Average Forward Current
A V
IF
RMS Forward Current (Square wave, 50% duty)
RMS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT50GT120JU3
V
®
I
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Trench + Field Stop IGBT
E
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
®
ISOTOP
Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Low conduction losses
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
RoHS Compliant
T
= 25°C
C
T
= 80°C
C
T
= 25°C
C
T
= 25°C
C
Duty cycle=0.5
T
= 80°C
C
www.microsemi.com
= 1200V
CES
= 50A @ Tc = 80°C
C
®
Technology
of V
C
CEsat
Max ratings
Unit
1200
V
75
A
50
100
±20
V
347
W
27
A
34
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APT50GT120JU3 Summary of contents

  • Page 1

    ... GE P Maximum Power Dissipation D IF Maximum Average Forward Current RMS Forward Current (Square wave, 50% duty) RMS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT50GT120JU3 V ® I Application • AC and DC motor control • Switched Mode Power Supplies Features • ...

  • Page 2

    ... Turn-off Delay Time d(off) T Fall Time f T Turn-on Delay Time d(on) T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off APT50GT120JU3 = 25°C unless otherwise specified j Test Conditions 1200V 25°C V =15V 50A T = 125° ...

  • Page 3

    ... ISOL T ,T Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight Typical IGBT Performance Curve APT50GT120JU3 Test Conditions I = 30A 60A 30A T = 125° ...

  • Page 4

    ... Effective Transient Thermal Impedance, Junction to Pulse Duration 0.4 0.35 0.9 0.3 0.7 0.25 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 rectangular Pulse Duration (Seconds) www.microsemi.com APT50GT120JU3 Output Characteristics 100 T = 125° =17V Energy losses vs Collector Current 20 V ...

  • Page 5

    ... Typical Diode Performance Curve APT50GT120JU3 www.microsemi.com ...

  • Page 6

    ... APT50GT120JU3 www.microsemi.com ...

  • Page 7

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT50GT120JU3 W=4.1 (.161) W=4.3 (.169) H=4 ...