APT50GT120JU3 Microsemi Power Products Group, APT50GT120JU3 Datasheet

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APT50GT120JU3

Manufacturer Part Number
APT50GT120JU3
Description
IGBT 1200V 75A 347W SOT227
Manufacturer
Microsemi Power Products Group
Series
Trench + Field Stop IGBT®r
Datasheet

Specifications of APT50GT120JU3

Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
5mA
Input Capacitance (cies) @ Vce
3.6nF @ 25V
Power - Max
347W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT50GT120JU3
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT50GT120JU3
Manufacturer:
APT
Quantity:
15 500
Absolute maximum ratings
Symbol
IF
V
IF
V
I
I
I
P
CM
Trench + Field Stop IGBT
RMS
CES
C1
C2
GE
A V
D
ISOTOP
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Maximum Average Forward Current
RMS Forward Current (Square wave, 50% duty)
G
G
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
ISOTOP
E
®
Buck chopper
C
C
A
Parameter
A
E
®
www.microsemi.com
Duty cycle=0.5
Application
Features
Benefits
AC and DC motor control
Switched Mode Power Supplies
Trench + Field Stop IGBT
ISOTOP
Very low stray inductance
High level of integration
Low conduction losses
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
RoHS Compliant
-
-
-
-
-
-
-
-
T
T
T
T
T
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
C
C
C
C
C
®
= 25°C
= 80°C
= 25°C
= 25°C
APT50GT120JU3
= 80°C
Package (SOT-227)
V
I
C
CES
= 50A @ Tc = 80°C
= 1200V
Max ratings
1200
®
100
±20
347
75
50
27
34
Technology
C
of V
CEsat
Unit
W
A
A
V
V
1 - 7

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APT50GT120JU3 Summary of contents

Page 1

... GE P Maximum Power Dissipation D IF Maximum Average Forward Current RMS Forward Current (Square wave, 50% duty) RMS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT50GT120JU3 V ® I Application • AC and DC motor control • Switched Mode Power Supplies Features • ...

Page 2

... Turn-off Delay Time d(off) T Fall Time f T Turn-on Delay Time d(on) T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off APT50GT120JU3 = 25°C unless otherwise specified j Test Conditions 1200V 25°C V =15V 50A T = 125° ...

Page 3

... ISOL T ,T Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight Typical IGBT Performance Curve APT50GT120JU3 Test Conditions I = 30A 60A 30A T = 125° ...

Page 4

... Effective Transient Thermal Impedance, Junction to Pulse Duration 0.4 0.35 0.9 0.3 0.7 0.25 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 rectangular Pulse Duration (Seconds) www.microsemi.com APT50GT120JU3 Output Characteristics 100 T = 125° =17V Energy losses vs Collector Current 20 V ...

Page 5

... Typical Diode Performance Curve APT50GT120JU3 www.microsemi.com ...

Page 6

... APT50GT120JU3 www.microsemi.com ...

Page 7

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT50GT120JU3 W=4.1 (.161) W=4.3 (.169) H=4 ...

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