APTGF30H60T1G Microsemi Power Products Group, APTGF30H60T1G Datasheet

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... Benefits • • • • • • • Parameter www.microsemi.com APTGF30H60T1G V = 600V CES I = 30A @ Tc = 80°C C Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current ...

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... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF30H60T1G = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V ...

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... T: Thermistor temperature 25     Thermistor value     − B       25 www.microsemi.com APTGF30H60T1G Min Typ Max IGBT 0.9 Diode 1.4 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...

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... J T =25° 25°C J 250µs Pulse Test < 0.5% Duty cycle Ic=60A Ic=30A Ic=15A 100 125 www.microsemi.com APTGF30H60T1G Output Characteristics (V =10V 250µs Pulse Test < 0.5% Duty cycle 37.5 T =25° =125° Collector to Emitter Voltage (V) CE Gate Charge 18 V =120V ...

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... I , Collector to Emitter Current (A) CE Switching Energy Losses vs Gate Resistance 1 Eoff, 30A 0.75 Eon, 30A 0 400V 0. 15V 125° Gate Resistance (Ohms) APTGF30H60T1G Turn-Off Delay Time vs Collector Current 125 100 V =15V =25° 400V 6.8Ω Collector to Emitter Current (A) CE Current Fall Time vs Collector Current ...

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... U.S and Foreign patents pending. All Rights Reserved. 280 240 Cies 200 160 Coes 120 80 Cres Single Pulse 0.001 0.01 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGF30H60T1G Operating Frequency vs Collector Current V = 400V 50 6.8Ω 125° 75°C C ZCS ZVS hard switching 0 ...