APTGF30H60T1G Microsemi Power Products Group, APTGF30H60T1G Datasheet - Page 5

• Manufacturer Part Number: APTGF30H60T1G
• Description: IGBT MODULE NPT FULL BRIDGE SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF30H60T1G

• Igbt Type: NPT
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 30A
• Current - Collector (ic) (max): 42A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.35nF @ 25V
• Power - Max: 140W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

50
40
30
20
10
50
40
30
20
10
0.75
0.25
0
0.5
Switching Energy Losses vs Gate Resistance
0.75
0.25
1
0
0
0.5
0
Turn-On Energy Loss vs Collector Current
1
0
0
Turn-On Delay Time vs Collector Current
Current Rise Time vs Collector Current
I
0
V
R
CE
I
V
10
CE
G
10
R
CE
, Collector to Emitter Current (A)
CE
I
CE
= 6.8Ω
G
10
= 400V
, Collector to Emitter Current (A)
= 6.8Ω
= 400V
, Collector to Emitter Current (A)
V
T
J
GE
=125°C
5
Gate Resistance (Ohms)
20
20
=15V,
20
Eoff, 30A
V
GE
30
30
= 15V
10
30
40
40
40
T
V
J
15
=125°C,
GE
Tj = 125°C
V
R
=15V
CE
G
50
50
50
= 6.8Ω
Eon, 30A
V
V
T
= 400V
CE
GE
J
= 125°C
20
= 400V
= 15V
60
60
60
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70
25
70
70
125
100
1.5
0.5
50
40
30
20
10
70
60
50
40
30
20
10
75
50
25
0
0
2
1
0
Turn-Off Energy Loss vs Collector Current
0
0
0
0
APTGF30H60T1G
Turn-Off Delay Time vs Collector Current
V
V
R
Current Fall Time vs Collector Current
I
Reverse Bias Safe Operating Area
CE
GE
V
CE
G
V
R
I
I
CE
CE
= 6.8Ω
CE
G
CE
10
, Collector to Emitter Current (A)
10
100
10
= 400V
= 15V
V
T
= 6.8Ω
, Collector to Emitter Voltage (V)
, Collector to Emitter Current (A)
GE
= 400V
, Collector to Emitter Current (A)
J
=25°C
V
=15V,
CE
20
= 400V, V
20
20
T
200
J
= 125°C
30
30
30
300
GE
T
J
= 15V, R
= 125°C
T
40
40
40
J
= 25°C
400
T
V
J
G
GE
=125°C
50
50
50
= 6.8Ω
=15V,
500
60
60
60
600
70
70
70
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