IGBT 1200V 123A 570W SOT227

 

APT100GT120JRDL

Manufacturer Part NumberAPT100GT120JRDL
DescriptionIGBT 1200V 123A 570W SOT227
ManufacturerMicrosemi Power Products Group
APT100GT120JRDL datasheets

Availability: In stock

International delivery:

Warranty: 60 days

Shipping & payment terms

Added to cart

Select quantity

 

Specifications of APT100GT120JRDL

Igbt TypeNPTConfigurationSingle
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic3.7V @ 15V, 100A
Current - Collector (ic) (max)123ACurrent - Collector Cutoff (max)300µA
Input Capacitance (cies) @ Vce6.7nF @ 25VPower - Max570W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseISOTOP
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesAPT100GT120JRDLMI
APT100GT120JRDLMI
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
Page 1/9

Download datasheet (229Kb)Embed
Next
Resonant Mode IGBT
The Thunderbolt IGBT
®
used in this Resonant Mode Combi is a new generation of high
voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT
fers superior ruggedness and ultrafast switching speed.
Features
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• Low forward Diode Voltage (V
)
F
• Ultrasoft Recovery Diode
Maximum Ratings
Symbol Parameter
V
Collector-Emitter Voltage
CES
Gate-Emitter Voltage
V
GE
I
Continuous Collector Current @ T
C1
I
Continuous Collector Current @ T
C2
1
I
Pulsed Collector Current
CM
SSOA
Switching Safe Operating Area @ T
Total Power Dissipation
P
D
Operating and Storage Junction Temperature Range
T
, T
J
STG
Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec.
T
L
Static Electrical Characteristics
Symbol Characteristic / Test Conditions
V
Collector-Emitter Breakdown Voltage (V
(BR)CES
V
Gate Threshold Voltage (V
GE(TH)
Collector Emitter On Voltage (V
V
CE(ON)
Collector Emitter On Voltage (V
Collector Cut-off Current (V
I
CES
Collector Cut-off Current (V
I
Gate-Emitter Leakage Current (V
GES
Integrated Gate Resistor
R
G(int)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed
®
Typical Applications
• Induction Heating
• SSOA Rated
• Welding
• RoHS Compliant
• Medical
• High Power Telecom
• Resonant Mode Phase Shifted
Bridge
All Ratings: T
= 25°C
C
= 100°C
C
= 150°C
J
= 5mA)
= 0V, I
GE
C
= V
, I
= 4mA, T
= 25°C)
CE
GE
C
j
= 15V, I
= 100A, T
= 25°C)
GE
C
j
= 15V, I
= 100A, T
= 125°C)
GE
C
j
2
= 1200V, V
= 0V, T
= 25°C)
CE
GE
j
2
= 1200V, V
= 0V, T
= 125°C)
CE
GE
j
= ±20V)
GE
Microsemi Website - http://www.microsemi.com
1200V
APT100GT120JRDL(G)
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
®
of-
"UL Recognized"
file # E145592
ISOTOP
®
C
G
E
= 25°C unless otherwise specifi ed.
C
APT100GT120JRDL(G)
Unit
1200
Volts
±20
123
67
Amps
200
200A @ 1200V
570
Watts
-55 to 150
°C
300
Unit
Min
Typ
Max
1200
-
-
4.5
5.5
6.5
Volts
2.7
3.2
3.7
-
4.0
-
-
-
300
-
-
1500
-
-
600
-
5
-
.
μA
nA
Ω

Related parts for APT100GT120JRDL

Part Number DescriptionManufacturer Datasheet
  APT100GT120JRDQ4 IGBT 1200V 123A 570W SOT227 Microsemi Power Products Group
  APT100GT120JU3 IGBT 1200V 140A 480W SOT227 Microsemi Power Products Group
APT100GT120JU2  APT100GT120JU2 IGBT 1200V 140A 480W SOT227 Microsemi Power Products Group
APT100GT60JR  APT100GT60JR IGBT 600V 148A 500W SOT227 Microsemi Power Products Group
APT100GT60JRDQ4  APT100GT60JRDQ4 IGBT 600V 148A 500W SOT227 Microsemi Power Products Group
APT100S20BG  APT100S20BG DIODE SCHOTTKY 120A 200V TO-247 Microsemi Power Products Group
APT100GN60LDQ4G  APT100GN60LDQ4G IGBT 600V 229A 625W TO264 Microsemi Power Products Group
APT1001RBVRG  APT1001RBVRG MOSFET N-CH 1000V 11A TO-247 Microsemi Power Products Group
APT10090BLLG  APT10090BLLG MOSFET N-CH 1000V 12A TO-247 Microsemi Power Products Group
  APT1001RSVRG MOSFET N-CH 1000V 11A D3PAK Microsemi Power Products Group
APT10050B2VRG  APT10050B2VRG MOSFET N-CH 1000V 21A T-MAX Microsemi Power Products Group
APT10050LVRG  APT10050LVRG MOSFET N-CH 1000V 21A TO-264 Microsemi Power Products Group
APT10050B2VFRG  APT10050B2VFRG MOSFET N-CH 1000V 21A T-MAX Microsemi Power Products Group
APT10045LFLLG  APT10045LFLLG MOSFET N-CH 1000V 23A TO-264 Microsemi Power Products Group
APT10035LLLG  APT10035LLLG MOSFET N-CH 1000V 28A TO-264 Microsemi Power Products Group

APT100GT120JRDL Summary of contents

  • Page 1

    ... Microsemi Website - http://www.microsemi.com 1200V APT100GT120JRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. ® of- "UL Recognized" file # E145592 ISOTOP ® 25°C unless otherwise specifi ed. C APT100GT120JRDL(G) Unit 1200 Volts ±20 123 67 Amps 200 200A @ 1200V 570 Watts -55 to 150 °C 300 ...

  • Page 2

    ... R = 1.0Ω 100μ 1200V CE Inductive Switching (25° 800V 15V 100A 4.7Ω +25° Inductive Switching (125° 800V 15V 100A 4.7Ω 125° APT100GT120JRDL(G) Min Typ Max - 6700 - - 6530 - - 4380 - - 10 685 - - 400 - , V = 15V, GE 200 - 100 - - 630 - - TBD - - ...

  • Page 3

    ... 25° 200A C = 50A FIGURE 6, On State Voltage vs Junction Temperature 120 100 75 100 125 150 FIGURE 8, DC Collector Current vs Case Temperature APT100GT120JRDL(G) 13V 15V 12V 11V 10V COLLECTOR-TO-EMITTER VOLTAGE (V) CE FIGURE 2, Output Characteristics (T = 25° 100A V = 240V 25°C ...

  • Page 4

    ... FIGURE 14, Turn-Off Energy Loss vs Collector Current 80000 E 200A on2, 70000 60000 50000 40000 30000 20000 E 100A 100A off, 10000 E 50A on2, E 50A off FIGURE 16, Switching Energy Losses vs Junction Temperature APT100GT120JRDL(G) V =15V,T =125° =15V,T =25° 800V 4.7Ω 100μ 120 ...

  • Page 5

    ... FIGURE 18, Minimum Switching Safe Operating Area SINGLE PULSE 0.1 RECTANGULAR PULSE DURATION (SECONDS 75° (°C) C .039 10 17. COLLECTOR CURRENT (A) C Figure 20, Operating Frequency vs Collector Current APT100GT120JRDL(G) 0 200 400 600 800 1000 1200 1400 V , COLLECTOR-TO-EMITTER VOLTAGE CE Note Duty Factor Peak θ ° 125 C J ° ...

  • Page 6

    ... Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Defi nitions 10% t d(on Switching Energy Figure 22, Turn-on Switching Waveforms and Defi nitions 97.34V 0.000V ∆97.34V Collector Voltage APT100GT120JRDL(G) a -46.0ns 780.4V b 422ns 34.13V Gate Voltage ∆468ns ∆746. 125°C J Collector Current 90% 5% 10% ...

  • Page 7

    ... SINGLE PULSE - RECTANGULAR PULSE DURATION (seconds) T (°C) T (° 0.450 0.347 0.0019 0.923 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL APT100GT120JRDL(G) = 25°C unless otherwise specifi ed. C APT100GT120JRDL Unit 60 90 Amps 120 Min Type Max Unit 1.6 2.1 2.0 Volts 1.25 Min Typ Max Unit 61 - ...

  • Page 8

    ... Figure 3. Reverse Recovery Time vs. Current Rate of Change 75A 37.5A 800 1000 1200 Figure 5. Reverse Recovery Current vs. Current Rate of Change 100 125 150 Figure 7. Maximum Average Forward Current vs. CaseTemperature 100 200 APT100GT120JRDL(G) 180 T = 125°C 150A 800V 160 R 140 75A 120 37.5A 100 80 60 ...

  • Page 9

    ... W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) * Emitter/Anode * Emitter/Anode Dimensions in Millimeters and (Inches ) APT100GT120JRDL(G) D.U. Waveform PEARSON 2878 CURRENT 4 5 0.25 I RRM 3 2 11.8 (.463) 12.2 (.480) 8.9 (.350) 9 ...

Related keywords:

  • apt100gt60jr
  • APT100GT120JRDL datasheet
  • APT100GT120JRDL data sheet
  • APT100GT120JRDL pdf datasheet
  • APT100GT120JRDL component
  • APT100GT120JRDL part
  • APT100GT120JRDL distributor
  • APT100GT120JRDL RoHS
  • APT100GT120JRDL datasheet download