APT100GT120JRDL Microsemi Power Products Group, APT100GT120JRDL Datasheet

APT100GT120JRDL

Manufacturer Part Number

APT100GT120JRDL

Description

IGBT 1200V 123A 570W SOT227

Manufacturer

Microsemi Power Products Group

Datasheet

1.APT100GT120JRDL.pdf (9 pages)

Specifications of APT100GT120JRDL

Igbt Type

NPT

Configuration

Single

Voltage - Collector Emitter Breakdown (max)

1200V

Vce(on) (max) @ Vge, Ic

3.7V @ 15V, 100A

Current - Collector (ic) (max)

123A

Current - Collector Cutoff (max)

300µA

Input Capacitance (cies) @ Vce

6.7nF @ 25V

Power - Max

570W

Input

Standard

Ntc Thermistor

Mounting Type

Chassis Mount

Package / Case

ISOTOP

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

APT100GT120JRDLMI
APT100GT120JRDLMI

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Maximum Ratings

Static Electrical Characteristics

Symbol Parameter

Symbol Characteristic / Test Conditions

The Thunderbolt IGBT

voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT

fers superior ruggedness and ultrafast switching speed.

SSOA

Features

• Low Conduction Loss

• Low Gate Charge

• Ultrafast Tail Current shutoff

• Low forward Diode Voltage (V

• Ultrasoft Recovery Diode

(BR)CES

, T

GE(TH)

CE(ON)

CES

GES

G(int)

CES

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current @ T

Pulsed Collector Current

Switching Safe Operating Area @ T

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec.

Collector-Emitter Breakdown Voltage (V

Gate Threshold Voltage (V

Collector Emitter On Voltage (V

Collector Cut-off Current (V

Gate-Emitter Leakage Current (V

Integrated Gate Resistor

Resonant Mode IGBT

used in this Resonant Mode Combi is a new generation of high

)

• SSOA Rated

• RoHS Compliant

Microsemi Website - http://www.microsemi.com

= V

= 1200V, V

= 15V, I

, I

= 100°C

= 25°C

= ±20V)

= 150°C

= 4mA, T

= 0V, I

= 100A, T

= 0V, T

= 25°C)

= 5mA)

= 25°C)

= 125°C)

Typical Applications

• Induction Heating

• Welding

• Medical

• High Power Telecom

• Resonant Mode Phase Shifted

= 25°C)

= 125°C)

Bridge

All Ratings: T

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

of-

= 25°C unless otherwise speciﬁ ed.

APT100GT120JRDL(G)

1200

Min

APT100GT120JRDL(G)

4.5

2.7

200A @ 1200V

-55 to 150

1200

±20

123

200

570

300

Typ

ISOTOP

5.5

3.2

4.0

1200V

1500

Max

300

600

6.5

3.7

"UL Recognized"

file # E145592

Amps

Watts

Unit

Volts

°C

Unit

Volts

μA

Related parts for APT100GT120JRDL

APT100GT120JRDL Summary of contents

Page 1

... Microsemi Website - http://www.microsemi.com 1200V APT100GT120JRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. ® of- "UL Recognized" file # E145592 ISOTOP ® 25°C unless otherwise speciﬁ ed. C APT100GT120JRDL(G) Unit 1200 Volts ±20 123 67 Amps 200 200A @ 1200V 570 Watts -55 to 150 °C 300 ...

Page 2

... R = 1.0Ω 100μ 1200V CE Inductive Switching (25° 800V 15V 100A 4.7Ω +25° Inductive Switching (125° 800V 15V 100A 4.7Ω 125° APT100GT120JRDL(G) Min Typ Max - 6700 - - 6530 - - 4380 - - 10 685 - - 400 - , V = 15V, GE 200 - 100 - - 630 - - TBD - - ...

Page 3

... 25° 200A C = 50A FIGURE 6, On State Voltage vs Junction Temperature 120 100 75 100 125 150 FIGURE 8, DC Collector Current vs Case Temperature APT100GT120JRDL(G) 13V 15V 12V 11V 10V COLLECTOR-TO-EMITTER VOLTAGE (V) CE FIGURE 2, Output Characteristics (T = 25° 100A V = 240V 25°C ...

Page 4

... FIGURE 14, Turn-Off Energy Loss vs Collector Current 80000 E 200A on2, 70000 60000 50000 40000 30000 20000 E 100A 100A off, 10000 E 50A on2, E 50A off FIGURE 16, Switching Energy Losses vs Junction Temperature APT100GT120JRDL(G) V =15V,T =125° =15V,T =25° 800V 4.7Ω 100μ 120 ...

Page 5

... FIGURE 18, Minimum Switching Safe Operating Area SINGLE PULSE 0.1 RECTANGULAR PULSE DURATION (SECONDS 75° (°C) C .039 10 17. COLLECTOR CURRENT (A) C Figure 20, Operating Frequency vs Collector Current APT100GT120JRDL(G) 0 200 400 600 800 1000 1200 1400 V , COLLECTOR-TO-EMITTER VOLTAGE CE Note Duty Factor Peak θ ° 125 C J ° ...

Page 6

... Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Deﬁ nitions 10% t d(on Switching Energy Figure 22, Turn-on Switching Waveforms and Deﬁ nitions 97.34V 0.000V ∆97.34V Collector Voltage APT100GT120JRDL(G) a -46.0ns 780.4V b 422ns 34.13V Gate Voltage ∆468ns ∆746. 125°C J Collector Current 90% 5% 10% ...

Page 7

... SINGLE PULSE - RECTANGULAR PULSE DURATION (seconds) T (°C) T (° 0.450 0.347 0.0019 0.923 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL APT100GT120JRDL(G) = 25°C unless otherwise speciﬁ ed. C APT100GT120JRDL Unit 60 90 Amps 120 Min Type Max Unit 1.6 2.1 2.0 Volts 1.25 Min Typ Max Unit 61 - ...

Page 8

... Figure 3. Reverse Recovery Time vs. Current Rate of Change 75A 37.5A 800 1000 1200 Figure 5. Reverse Recovery Current vs. Current Rate of Change 100 125 150 Figure 7. Maximum Average Forward Current vs. CaseTemperature 100 200 APT100GT120JRDL(G) 180 T = 125°C 150A 800V 160 R 140 75A 120 37.5A 100 80 60 ...

Page 9

... W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) * Emitter/Anode * Emitter/Anode Dimensions in Millimeters and (Inches ) APT100GT120JRDL(G) D.U. Waveform PEARSON 2878 CURRENT 4 5 0.25 I RRM 3 2 11.8 (.463) 12.2 (.480) 8.9 (.350) 9 ...

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