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APT100GT120JRDQ4
APT100GT120JRDQ4 | |
|---|---|
| Manufacturer Part Number | APT100GT120JRDQ4 |
| Description | IGBT 1200V 123A 570W SOT227 |
| Manufacturer | Microsemi Power Products Group |
| Series | Thunderbolt IGBT® |
| APT100GT120JRDQ4 datasheets |
|
Availability: In stock
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
- Standard delivery time differs from 5-8 business days if the supplier is a local one to 12-14 days if the suplier is from overseas. If delivery time differs it's always mentioned in our quotation.
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Payment terms
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- If you still have any questions - please contact us
Specifications of APT100GT120JRDQ4 | |||
|---|---|---|---|
| Igbt Type | NPT | Configuration | Single |
| Voltage - Collector Emitter Breakdown (max) | 1200V | Vce(on) (max) @ Vge, Ic | 3.7V @ 15V, 100A |
| Current - Collector (ic) (max) | 123A | Current - Collector Cutoff (max) | 200µA |
| Input Capacitance (cies) @ Vce | 7.85nF @ 25V | Power - Max | 570W |
| Input | Standard | Ntc Thermistor | No |
| Mounting Type | Chassis Mount | Package / Case | ISOTOP |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Other names | APT100GT120JRDQ4MI APT100GT120JRDQ4MI |
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Thunderbolt IGBT
®
The Thunderbolt IGBT
is a new generation of high voltage power IGBTs. Using
Non-Punch-Through Technology, the Thunderbolt IGBT
ness and ultrafast switching speed.
Features
• Low Forward Voltage Drop
• Low Tail Current
• Integrated Gate Resistor
Low EMI, High Reliability
• RoHS Compliant
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel
IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
Maximum Ratings
Symbol Parameter
V
Collector-Emitter Voltage
CES
Gate-Emitter Voltage
V
GE
I
Continuous Collector Current @ T
C1
I
Continuous Collector Current @ T
C2
1
I
Pulsed Collector Current
CM
SSOA
Switching Safe Operating Area @ T
Total Power Dissipation
P
D
Operating and Storage Junction Temperature Range
T
, T
J
STG
Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec.
T
L
Static Electrical Characteristics
Symbol Characteristic / Test Conditions
V
Collector-Emitter Breakdown Voltage (V
(BR)CES
V
Gate Threshold Voltage (V
GE(TH)
Collector Emitter On Voltage (V
V
CE(ON)
Collector Emitter On Voltage (V
Collector Cut-off Current (V
I
CES
Collector Cut-off Current (V
I
Gate-Emitter Leakage Current (V
GES
Integrated Gate Resistor
R
G(int)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed
®
®
offers superior rugged-
• RBSOA and SCSOA Rated
• High Frequency Switching to 50KHz
• Ultra Low Leakage Current
All Ratings: T
= 25°C
C
= 100°C
C
= 150°C
J
= 5mA)
= 0V, I
GE
C
= V
, I
= 4mA, T
= 25°C)
CE
GE
C
j
= 15V, I
= 100A, T
= 25°C)
GE
C
j
= 15V, I
= 100A, T
= 125°C)
GE
C
j
2
= 1200V, V
= 0V, T
= 25°C)
CE
GE
j
2
= 1200V, V
= 0V, T
= 125°C)
CE
GE
j
= ±20V)
GE
Microsemi Website - http://www.microsemi.com
APT100GT120JRDQ4
1200V, 100A, V
= 3.2V Typical
CE(ON)
"UL Recognized"
ISOTOP
®
file # E145592
= 25°C unless otherwise specified.
C
Ratings
Unit
1200
Volts
±20
123
67
Amps
200
200A @ 1200V
570
Watts
-55 to 150
°C
300
Unit
Min
Typ
Max
1200
-
-
4.5
5.5
6.5
Volts
2.7
3.2
3.7
-
4.0
-
-
-
200
μA
-
-
TBD
-
-
600
nA
Ω
-
5
-
.
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APT100GT120JRDQ4 Summary of contents |
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