APTGF50DDA120T3G

Manufacturer Part NumberAPTGF50DDA120T3G
DescriptionIGBT MOD NPT 1200V 50A SP3
ManufacturerMicrosemi Power Products Group
APTGF50DDA120T3G datasheet
 

Specifications of APTGF50DDA120T3G

Igbt TypeNPTConfigurationDual Boost Chopper
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic3.7V @ 15V, 50A
Current - Collector (ic) (max)70ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce3.45nF @ 25VPower - Max312W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP3
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Dual Boost chopper
NPT IGBT Power Module
13
14
CR1
22
7
23
8
Q1
26
27
29
30
31
15
R1
28 27 26
25
23 22
20
29
30
31
32
2
3
4
7
8
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF50DDA120T3G
Application
AC and DC motor control
Switched Mode Power Supplies
CR2
Features
Non Punch Through (NPT) Fast IGBT
Q2
4
3
Kelvin emitter for easy drive
Very low stray inductance
32
High level of integration
16
Internal thermistor for temperature monitoring
Benefits
Outstanding
19
18
operation
16
Direct mounting to heatsink (isolated package)
15
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
14
Easy paralleling due to positive TC of VCEsat
13
Each leg can be easily paralleled to achieve a
10
11 12
single buck of twice the current capability
RoHS compliant
Max ratings
T
= 25°C
c
T
= 80°C
c
T
= 25°C
c
T
= 25°C
c
T
= 150°C
100A @ 1200V
j
www.microsemi.com
V
= 1200V
CES
I
= 50A @ Tc = 80°C
C
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
-
Symmetrical design
performance
at
high
Unit
1200
V
70
A
50
150
±20
V
312
W
frequency
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APTGF50DDA120T3G Summary of contents

  • Page 1

    ... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF50DDA120T3G Application • AC and DC motor control • Switched Mode Power Supplies CR2 Features • ...

  • Page 2

    ... Chopper diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50DDA120T3G = 25°C unless otherwise specified j Test Conditions 25° 1200V T = 125° 25°C V =15V ...

  • Page 3

    ... 298.15 K 25/85 25 ∆B ⎡ exp ⎢ B ⎣ (dimensions in mm) SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGF50DDA120T3G Diode To heatsink T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ⎜ ⎟ ⎟ − ...

  • Page 4

    ... Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0. Junction Temperature (°C) J APTGF50DDA120T3G Output Characteristics (V =15V 250µs Pulse Test < 0.5% Duty cycle 30 T =125° Collector to Emitter Voltage ( 50A T =25°C 16 ...

  • Page 5

    ... Switching Energy Losses vs Gate Resistance 600V 15V 125° Eon, 50A 10 Eoff, 50A 8 6 Eon, 25A 4 2 Eoff, 25A Gate Resistance (Ohms) www.microsemi.com APTGF50DDA120T3G Turn-Off Delay Time vs Collector Current 400 V =15V =125°C 350 J 300 V =15V =25°C 250 600V 5Ω G 200 100 I , Collector to Emitter Current (A) ...

  • Page 6

    ... Rectangular Pulse Duration (Seconds) APTGF50DDA120T3G Reverse Bias Safe Operating Area 120 100 400 V , Collector to Emitter Voltage (V) CE Single Pulse 0.01 0.1 Operating Frequency vs Collector Current ...

  • Page 7

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50DDA120T3G Single Pulse 0.001 ...