APTGF90DU60TG Microsemi Power Products Group, APTGF90DU60TG Datasheet - Page 6

• Manufacturer Part Number: APTGF90DU60TG
• Description: IGBT MODULE NPT DUAL SOURCE SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF90DU60TG

• Igbt Type: NPT
• Configuration: Dual, Common Source
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 90A
• Current - Collector (ic) (max): 110A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 4.3nF @ 25V
• Power - Max: 416W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
10000
1000
100
0.35
0.25
0.15
0.05
0.3
0.2
0.1
0.00001
Capacitance vs Collector to Emitter Voltage
0
0
V
0.05
CE
0.9
0.5
0.3
0.7
0.1
, Collector to Emitter Voltage (V)
10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
40
0.001
Rectangular Pulse Duration (Seconds)
Coes
Cies
Cres
www.microsemi.com
Single Pulse
50
0.01
250
200
150
100
200
160
120
50
80
40
0
0
20
Operating Frequency vs Collector Current
0
switching
V
Hard
Reverse Bias Safe Operating Area
APTGF90DU60TG
0.1
CE
ZVS
, Collector to Emitter Voltage (V)
40
200
I
C
, Collector Current (A)
60
ZCS
400
1
80
V
D = 50%
R
T
T
J
C
G
CE
= 125°C
= 75°C
600
= 5Ω
= 400V
100
800
120
10
6 - 6