APTGF50X60T3G

Manufacturer Part NumberAPTGF50X60T3G
DescriptionIGBT MODULE NPT 3PH BRIDGE SP3
ManufacturerMicrosemi Power Products Group
APTGF50X60T3G datasheet
 

Specifications of APTGF50X60T3G

Igbt TypeNPTConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.45V @ 15V, 50A
Current - Collector (ic) (max)65ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce2.2nF @ 25VPower - Max250W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP3
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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3 Phase bridge
NPT IGBT Power Module
15
16
23
19
25
20
18
8
11
7
10
12
It is recommended to connect a decoupling capacitor
between pins 31 & 2 to reduce switching overvoltages, if DC
Power is connected between pins 15, 16 & 12.
Pins 15 & 16 must be shorted together.
28 27 26
25
23 22
29
30
31
32
2
3
4
7
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
* Specification of IGBT device but output current must be limited to 40A at Tc=80°C not to exceed a connectors
temperature greater than 120°C.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Application
31
29
14
Features
30
22
28
R1
4
13
3
2
Benefits
20
19
18
16
15
14
13
8
10
11 12
T
= 25°C
C
T
= 80°C
C
T
= 25°C
C
T
= 25°C
C
T
= 125°C
j
www.microsemi.com
APTGF50X60T3G
V
= 600V
CES
I
= 50A* @ Tc = 80°C
C
Motor control
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 100 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
RoHS compliant
Max ratings
Unit
600
V
65
A
50 *
230
±20
V
250
W
100A @ 500V
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APTGF50X60T3G Summary of contents

  • Page 1

    ... T = 25° 80° 25° 25° 125°C j www.microsemi.com APTGF50X60T3G V = 600V CES I = 50A 80°C C • Motor control • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current ...

  • Page 2

    ... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50X60T3G = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V ...

  • Page 3

    ... R : Thermistor value     − B       heatsink 17 12 www.microsemi.com APTGF50X60T3G Min Typ Max 50 3952 Min Typ Max IGBT 0.5 Diode 1.2 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 110 Unit kΩ K Unit ° ...

  • Page 4

    ... T =-55° 25°C J 250µs Pulse Test < 0.5% Duty cycle Ic=100A Ic=50A Ic=25A 100 125 www.microsemi.com APTGF50X60T3G Output Characteristics (V =10V) GE 150 250µs Pulse Test < 0.5% Duty cycle T =-55°C J 100 T =25° =125° Collector to Emitter Voltage (V) CE Gate Charge ...

  • Page 5

    ... CE 2 15V 125°C Eon, 50A J 2 1.5 Eoff, 50A 1 0.5 Eon, 50A Gate Resistance (Ohms) APTGF50X60T3G Turn-Off Delay Time vs Collector Current 200 175 150 125 100 V = 400V 2.7Ω 150 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 60 ...

  • Page 6

    ... U.S and Foreign patents pending. All Rights Reserved. Cies Coes Single Pulse 0.001 0.01 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGF50X60T3G Operating Frequency vs Collector Current 240 V = 400V CE 200 2.7Ω G 160 T = 125° ...