APTGF25X120T3G Microsemi Power Products Group, APTGF25X120T3G Datasheet
APTGF25X120T3G
Specifications of APTGF25X120T3G
Related parts for APTGF25X120T3G
APTGF25X120T3G Summary of contents
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... T = 25° 80° 25° 25° 125°C j www.microsemi.com APTGF25X120T3G V = 1200V CES I = 25A @ Tc = 80°C C • Motor control • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current ...
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... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF25X120T3G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...
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... R : Thermistor value − B heatsink 17 12 www.microsemi.com APTGF25X120T3G Min Typ Max 50 3952 Min Typ Max IGBT 0.6 Diode 1.2 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 110 Unit kΩ K Unit ° ...
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... Junction Temperature (°C) J =15V =25° =125° =25°C J 7.5 10 12.5 15 Ic=50A Ic=25A Ic=12. 100 125 www.microsemi.com APTGF25X120T3G Output Characteristics (V =10V 250µs Pulse Test < 0.5% Duty cycle 16 T =25° =125° 0.5 1 1 Collector to Emitter Voltage (V) CE Gate Charge 25A V =240V C ...
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... Switching Energy Losses vs Gate Resistance 600V 15V Eon, 25A 125° Eoff, 25A Gate Resistance (Ohms) www.microsemi.com APTGF25X120T3G Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 22Ω G 200 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 125°C J ...
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... U.S and Foreign patents pending. All Rights Reserved. Cies Coes Cres Single Pulse 0.001 0.01 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGF25X120T3G Operating Frequency vs Collector Current 120 100 V = 600V 50 22Ω 125° ...