APT60GF120JRDQ3 Microsemi Power Products Group, APT60GF120JRDQ3 Datasheet

IGBT 1200V 149A 625W SOT227

APT60GF120JRDQ3

Manufacturer Part Number
APT60GF120JRDQ3
Description
IGBT 1200V 149A 625W SOT227
Manufacturer
Microsemi Power Products Group

Specifications of APT60GF120JRDQ3

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 100A
Current - Collector (ic) (max)
149A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
7.08nF @ 25V
Power - Max
625W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT60GF120JRDQ3MI
APT60GF120JRDQ3MI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT60GF120JRDQ3
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT60GF120JRDQ3
Quantity:
123
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
The Fast IGBT
Punch Through Technology the Fast IGBT™ combined with an APT free-
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed
.
• Low Forward Voltage Drop
• Low Tail Current
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Antiparallel Diode
V
V
Symbol
Symbol
RBSOA
T
CE
V
GE
V
J
I
I
V
I
,T
I
I
P
CES
GES
GEM
CES
T
CM
C1
C2
GE
(ON)
(TH)
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Characteristic / Test Conditions
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Reverse Bias Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
is a new generation of high voltage power IGBTs. Using Non-
Fast IGBT & FRED
1
(V
CE
CE
CE
APT Website - http://www.advancedpower.com
@ T
= V
= V
= V
• 20 kHz operation @ 800V, 24A
• 10 kHz operation @ 800V, 40A
• Ultra Low Leakage Current
GE
GE
C
GE
C
C
CES
CES
GE
= 15V, I
= 15V, I
= 25°C
= 25°C
= 110°C
= ±20V, V
, I
, V
, V
C
J
GE
GE
= 150°C
= 500µA, T
C
C
= 0V, T
= 0V, T
= 60A, T
= 60A, T
CE
= 0V)
j
j
j
= 25°C)
= 125°C)
= 25°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
APT60GF120JRD
C
= 25°C unless otherwise specified.
MIN
3
APT60GF120JRD
360A @ 960V
-55 to 150
ISOTOP
TYP
4.5
2.1
2.5
1200
±20
±30
115
360
521
300
60
®
±100
3000
MAX
500
3.4
3.4
6
"UL Recognized"
G
1200V
UNIT
Amps
Watts
Volts
UNIT
Volts
mA
nA
°C
C
E

Related parts for APT60GF120JRDQ3

APT60GF120JRDQ3 Summary of contents

Page 1

... Fast IGBT & FRED ™ The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology the Fast IGBT™ combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed . • ...

Page 2

DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc RBSOA Reverse ...

Page 3

TYPICAL PERFORMANCE CURVES 120 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 100 T =-55° =25° =125° COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE ...

Page 4

V = 800V 25°C, T =125° 100 µ 15V COLLECTOR ...

Page 5

TYPICAL PERFORMANCE CURVES 10,000 5,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.25 D=0.5 0.1 0.2 0.05 0.1 0.05 0.01 0.02 0.005 0.01 SINGLE PULSE 0.001 10 -5 ...

Page 6

D.U.T. Figure 21, Inductive Switching Test Circuit 90% Gate Voltage Collector Voltage t t d(off) f 90% 10% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions APT 60GF120JRD 10% 18V ...

Page 7

ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Characteristic / Test Conditions Symbol I (AV) Maximum Average Forward Current ( (RMS) RMS Forward Current F I Non-Repetitive Forward Surge Current (T FSM STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test ...

Page 8

TYPICAL PERFORMANCE CURVES 200 160 T = 150°C J 120 T = 100° ANODE-TO-CATHODE VOLTAGE (VOLTS) F Figure 2, Forward Voltage Drop vs Forward Current 100°C J ...

Page 9

I - Forward Conduction Current /dt - Current Slew Rate, Rate of Forward F Current Change Through Zero Crossing Peak Reverse Recovery Current. RRM Reverse Recovery ...

Related keywords