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APT60GF120JRDQ3
APT60GF120JRDQ3 | |
|---|---|
| Manufacturer Part Number | APT60GF120JRDQ3 |
| Description | IGBT 1200V 149A 625W SOT227 |
| Manufacturer | Microsemi Power Products Group |
| APT60GF120JRDQ3 datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
×
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Specifications of APT60GF120JRDQ3 | |||
|---|---|---|---|
| Igbt Type | NPT | Configuration | Single |
| Voltage - Collector Emitter Breakdown (max) | 1200V | Vce(on) (max) @ Vge, Ic | 3V @ 15V, 100A |
| Current - Collector (ic) (max) | 149A | Current - Collector Cutoff (max) | 350µA |
| Input Capacitance (cies) @ Vce | 7.08nF @ 25V | Power - Max | 625W |
| Input | Standard | Ntc Thermistor | No |
| Mounting Type | Chassis Mount | Package / Case | ISOTOP |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Other names | APT60GF120JRDQ3MI APT60GF120JRDQ3MI |
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TYPICAL PERFORMANCE CURVES
120
V GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
100
T
=-55°C
C
80
T
=25°C
C
60
40
T
=125°C
C
20
0
0
1
2
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
CE
FIGURE 1, Output Characteristics(V
350
250µs PULSE TEST
<0.5 % DUTY CYCLE
T J = -55°C
300
250
200
150
100
T J = 125°C
50
T J = 25°C
0
0
2
4
6
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
4
250µs PULSE TEST
3.5
3
2.5
I
60A
C=
2
I
30A
C=
1.5
1
0.5
0
8
10
12
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.2
1.15
1.1
1.05
1.0
Graph does not apply
0.95
0.90
0.85
0.8
-50
-25
0
25
50
T
, JUNCTION TEMPERATURE (°C)
J
FIGURE 7, Breakdown Voltage vs. Junction Temperature
3
4
= 15V)
GE
8
10
12
T J = 25°C.
<0.5 % DUTY CYCLE
I
120A
C=
14
16
FIGURE 6, On State Voltage vs Junction Temperature
75
100
125
FIGURE 8, DC Collector Current vs Case Temperature
APT60GF120JRD
120
V GE = 10V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
100
80
T
=-55°C
C
60
T
=25°C
C
40
T
=125°C
C
20
0
0
.5
1
1.5
2
2.5
3
3.5
4
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
CE
FIGURE 2, Output Characteristics (V
= 10V)
GE
16
I
= 80A
C
T
= 25°C
J
V
= 240V
14
CE
12
V
= 600V
CE
10
V
= 960V
8
CE
6
4
2
0
0
20
40
60
80
100 120 140 160
GATE CHARGE (nC)
FIGURE 4, Gate Charge
4
V GE = 15V.
250µs PULSE TEST
I
120A
C=
3.5
<0.5 % DUTY CYCLE
3
2.5
I
60A
C=
2
I
30A
C=
1.5
1
0.5
0
-50
-25
0
25
50
75
100
T
, Junction Temperature (°C)
J
160
140
120
100
80
60
40
20
0
-50
-25
0
25
50
75 100 125 150
5T
, CASE TEMPERATURE (°C)
C
4.5
125
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