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APT60GF120JRDQ3
APT60GF120JRDQ3 | |
|---|---|
| Manufacturer Part Number | APT60GF120JRDQ3 |
| Description | IGBT 1200V 149A 625W SOT227 |
| Manufacturer | Microsemi Power Products Group |
| APT60GF120JRDQ3 datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
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Specifications of APT60GF120JRDQ3 | |||
|---|---|---|---|
| Igbt Type | NPT | Configuration | Single |
| Voltage - Collector Emitter Breakdown (max) | 1200V | Vce(on) (max) @ Vge, Ic | 3V @ 15V, 100A |
| Current - Collector (ic) (max) | 149A | Current - Collector Cutoff (max) | 350µA |
| Input Capacitance (cies) @ Vce | 7.08nF @ 25V | Power - Max | 625W |
| Input | Standard | Ntc Thermistor | No |
| Mounting Type | Chassis Mount | Package / Case | ISOTOP |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Other names | APT60GF120JRDQ3MI APT60GF120JRDQ3MI |
1
2
3
4
5
6
7
8
9
PrevNext
70
60
50
40
30
20
V
= 800V
CE
T
= 25°C, T
=125°C
J
J
R
= 5
G
10
L = 100 µH
V
= 15V
GE
0
10
20
30
40
50
60
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 9, Turn-On Delay Time vs Collector Current
200
V
= 800V
CE
180
R
= 5
G
L = 100 µH
160
V
= 15V
=
T
25°C
GE
J
140
120
100
80
60
40
=
T
125°C
J
20
0
10 20 30 40 50 60 70 80 90 100 110 120
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 11, Current Rise Time vs Collector Current
35000
V
= 800V
CE
V
= +15V
GE
30000
R
= 5
G
25000
=
T
125°C
20000
J
15000
10000
5000
=
T
25°C
J
0
10 20 30 40 50 60 70 80 90 100 110120
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 13, Turn-On Energy Loss vs Collector Current
25000
V
= 800V
CE
V
= +15V
GE
T
= 125°C
J
20000
E
off
15000
E
60A
on2
E
30A
10000
on2
5000
E
30A
off
0
0
10
20
R
, GATE RESISTANCE (OHMS)
G
FIGURE 15, Switching Energy Losses vs. Gate Resistance
800
800
700
600
500
400
300
V
CE
200
R
= 5
G
L = 100 µH
100
V
GE
0
70
0
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 10, Turn-Off Delay Time vs Collector Current
200
180
160
140
120
100
80
60
V
CE
40
R
= 5
G
L = 100 µH
20
V
GE
0
10
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 12, Current Fall Time vs Collector Current
18000
V
= 800V
CE
V
= +15V
GE
16000
R
= 5
G
14000
12000
10000
8000
6000
4000
2000
0
10 20 30 40 50 60 70 80 90 100 110 120
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 14, Turn Off Energy Loss vs Collector Current
35000
V
= 800V
CE
V
= +15V
GE
R
= 5
30000
G
25000
60A
20000
15000
E
120A
off
10000
5000
E
60A
off
0
30
-25
T
FIGURE 16, Switching Energy Losses vs Junction Temperature
APT60GF120JRD
T
=125°C
J
T
=25°C
J
= 800V
= 15V
20
40
60
80
100
120
=
T
125°C
J
= 800V
=
T
25°C
J
= 15V
20
30
40
50
60
70
=
T
125°C
J
=
T
25°C
J
E
120A
on2
E
60A
on2
E
30A
on2
E
30A
off
0
25
50
75
100
125
, JUNCTION TEMPERATURE (°C)
J
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